BYW73-TAP

BYW72, BYW73, BYW74, BYW75, BYW76 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 949588 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS • Fast rectification and switching diode for TV-line output circuits and switch mode power supply Models Available MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg         ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYW72 or BYW73 BYW73-TR 2500 per 10" tape and reel 12 500 BYW72 or BYW73 BYW73-TAP 2500 per ammopack 12 500 BYW74 or BYW75 or BYW76 BYW76-TR 2500 per 10" tape and reel 12 500 BYW74 or BYW75 or BYW76 BYW76-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW72 VR = 200 V; IF(AV) = 3 A SOD-64 BYW73 VR = 300 V; IF(AV) = 3 A SOD-64 BYW74 VR = 400 V; IF(AV) = 3 A SOD-64 BYW75 VR = 500 V; IF(AV) = 3 A SOD-64 BYW76 VR = 600 V; IF(AV) = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave Repetitive peak forward current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 0.4 A PART SYMBOL VALUE UNIT BYW72 VR = VRRM 200 V BYW73 VR = VRRM 300 V BYW74 VR = VRRM 400 V BYW75 VR = VRRM 500 V BYW76 VR = VRRM 600 V IFSM 100 A IFRM 15 A IF(AV) 3 A ER 10 mJ Tj = Tstg -55 to +175 °C Rev. 1.8, 21-Feb-18 Document Number: 86050 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYW72, BYW73, BYW74, BYW75, BYW76 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 3 A VF - 0.95 1.1 V VR = VRRM IR - 1 5 μA VR = VRRM, Tj = 150 °C IR - 60 150 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns Forward voltage Reverse current Reverse recovery time PART UNIT 3.5 40 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 30 20 l l 10 TL = constant VR = VRRM half sinewave 3.0 RthJA = 45 K/W I = 10 mm 2.5 2.0 1.5 RthJA = 70 K/W PCB: d = 25 mm 1.0 0.5 0 0 0 5 10 15 20 25 l - Lead Length (mm) 949548 0 30 Fig. 1 - Max. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16356 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 10 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 100 10 0.001 0 16355 0.4 0.8 1.2 1.6 1 25 2.0 VF - Forward Voltage (V) Fig. 2 - Max. Forward Current vs. Forward Voltage 16357 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 21-Feb-18 Document Number: 86050 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYW72, BYW73, BYW74, BYW75, BYW76 Vishay Semiconductors 300 90 VR = VRRM CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 250 200 PR-Limit at 100 % VR 150 100 PR-Limit at 80 % VR 50 16358 70 60 50 40 30 20 10 0 25 50 75 100 125 150 0 0.1 175 Tj - Junction Temperature (°C) 1 10 100 VR - Reverse Voltage (V) 16359 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resist. for Pulse Cond. (K/W) f = 1 MHz 80 Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 600 V RthJA = 70 K/W 100 Tamb = 25 °C tp/T = 0.5 100 °C 0.2 10 45 °C 0.1 70 °C 0.05 0.02 0.01 1 10-4 10-3 10-2 949562 10-1 10-0 101 102 tp - Pulse Length (s) 100 101 102 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Rev. 1.8, 21-Feb-18 Document Number: 86050 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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