LL4150GS18

LL4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Low forward voltage drop • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and industrial applications LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS08/2.5K per 7" reel (8 mm tape),12.5K/box GS18/10K per 13" reel (8 mm tape),10K/box PARTS TABLE PART LL4150 ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS LL4150GS08 or LL4150GS18 - Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 μs Forward continuous current Average forward current VR = 0 Power dissipation SYMBOL VALUE UNIT VRRM 50 V VR 50 V IFSM 4 A IF 600 mA IF(AV) 300 mA Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 300 K/W Tj 175 °C Storage temperature range Tstg -65 to +175 °C Operating temperature range Top -55 to +175 °C Thermal resistance junction to ambient air Junction temperature Rev. 2.1, 26-Nov-2021 Document Number: 85558 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LL4150 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. MAX. UNIT IF = 1 mA VF 0.540 0.620 V IF = 10 mA VF 0.660 0.740 V IF = 50 mA VF 0.760 0.860 V IF = 100 mA VF 0.820 0.920 V IF = 200 mA VF 0.870 1 V VR = 50 V IR 100 nA VR = 50 V, Tj = 150 °C IR 100 μA VR = 0, f = 1 MHz, VHF = 50 mV CD 2.5 pF IF = IR = 10 mA to 100 mA, iR = 0.1 x IR, RL = 100 Ω trr 4 ns Forward voltage Reverse current Diode capacitance Reverse recovery time TYP. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Scattering Limit IF - Forward Current (mA) IR - Reverse Current (µA) 100 10 1 0.1 VR = 50 V 0.01 0 94 9100 100 40 80 120 160 Scattering Limit 10 1 TJ = 25 °C 0.1 200 TJ - Junction Temperature (°C) 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 94 9162 Fig. 2 - Forward Current vs. Forward Voltage Fig. 1 - Reverse Current vs. Junction Temperature PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80) 1.6 (0.063) 1.4 (0.055) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Rev. 2.1, 26-Nov-2021 Document Number: 85558 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000