LL4150-GS08

VISHAY LL4150 Vishay Semiconductors Fast Switching Diode Features • Silicon Epitaxial Planar Diodes • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9371 Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 30 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part LL4150 Type differentiation VRRM = 50 V Ordering code LL4150-GS18 or LL4150-GS08 Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation VR = 0 tp = 1 µs Test condition Symbol VRRM VR IFSM IF IFAV PV Value 50 50 4 600 300 500 Unit V V A mA mA mW Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Tj Tstg Value 500 175 - 65 to + 175 Unit K/W °C °C Document Number 85558 Rev. 1.6, 06-Apr-04 www.vishay.com 1 LL4150 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition I F = 1 mA IF = 10 mA IF = 50 mA IF= 100 mA IF = 200 mA Reverse current Diode capacitance Reverse recovery time V R = 50 V VR = 50 V, Tj = 150 °C VR = 0, f = 1 MHz, VHF = 50 mV IF = IR = 10 to 100 mA, iR = 0.1 x IR, RL = 100 Ω Symbol VF VF VF VF VF IR IR CD trr Min 0.54 0.66 0.76 0.82 0.87 Typ. Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 VISHAY Unit V V V V V nA µA pF ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 Scattering Limit 10 I R - Reverse Currentı ( µ 1 0.1 VR = 50 V 0 40 80 120 160 200 Tj - Junction Temperature ( ° C ) 0.01 94 9100 Fig. 1 Reverse Current vs. Junction Temperature 1000 I F - Forward Current ( mA ) 100 Scattering Limit 10 1 Tj = 25 °C 0 0.4 0.8 1.2 1.6 2.0 0.1 94 9162 V F - Forward Voltage ( V ) Fig. 2 Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 85558 Rev. 1.6, 06-Apr-04 VISHAY Package Dimensions in mm (Inches) LL4150 Vishay Semiconductors Cathode indification 1.5 ± 0.1 (0.06 ± 0.004) 3.5 ± 0.2 (0.14 ± 0.008) 0.47 max. (0.02) Mounting Pad Layout 2.50 (0.098) max 1.25 (0.049) min technical drawings according to DIN specifications Glass case Mini Melf / SOD 80 JEDEC DO 213 AA 96 12070 5 (0.197) ref Document Number 85558 Rev. 1.6, 06-Apr-04 2 (0.079) min www.vishay.com 3 LL4150 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85558 Rev. 1.6, 06-Apr-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1