SI4922BDY-T1-E3

Si4922BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 19 D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 D2 G2 Top View Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Limit 30 ± 12 8e 8e 8b, c, e 6.6b, c 35 2.5 1.7b, c 35 15 11.2 3.1 2 2b, c TC = 25 °C TA = 25 °C Pulsed Sorce-Drain Current Single Pulse Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS ISM IAS EAS PD 1.28b, c - 50 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Limit Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 50 30 Maximum 62.5 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. e. Package Limited. Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 1 Si4922BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 ΔVDS/TJ ΔVGS(th)/TJ VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb RDS(on) Forward Transconductanceb Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gfs tr mV/°C - 4.6 0.6 1.8 V 100 nA VDS = 30 V, VGS = 0 V 1 10 VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A 20 0.016 VGS = 4.5 V, ID = 5 A 0.0145 0.018 VGS = 2.5 V, ID = 5 A 0.018 0.024 VDS = 15 V, ID = 5 A 30 Ω S 2070 VDS = 15 V, VGS = 0 V, f = 1 MHz 255 pF 135 VDS = 15 V, VGS = 10 V, ID = 5 A 41 62 19 29 VDS = 15 V, VGS = 4.5 V, ID = 5 A 3.5 f = 1 MHz 1.8 3 7 14 27 41 nC 3.7 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 47 tf 8 15 td(on) 13 25 tr µA A 0.0135 31 td(off) Unit V VDS = 30 V, VGS = 0 V, TJ = 55 °C td(on) td(off) Max. 35 ID = 250 µA Gate-Body Leakage Gate Threshold Voltage Typ.a VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf 53 80 68 102 54 81 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.5 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 35 IS = 1.7 A IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.77 1.2 V 32 48 ns 21 32 nC 13 19 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 40 TJ = 125 °C VGS = 10 V thru 3 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 2V TJ = 25 °C 1.2 0.8 0.4 8 TJ = - 55 °C 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 3000 0.026 2400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 0.022 VGS = 2.5 V 0.018 VGS = 4.5 V 0.014 3.0 Ciss 1800 1200 600 Coss VGS = 10 V 0.010 Crss 0 0 8 16 24 32 40 0 6 I D - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 10 ID = 5 A ID = 5 A 1.5 VDS = 10 V VDS = 15 V 6 VDS = 20 V 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.3 VGS = 4.5 V VGS = 10 V 1.1 0.9 2 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 36 45 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A 150 °C 10 25 °C 1 0.08 0.06 0.04 125 °C 0.02 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 100 0.4 ID = 250 µA 0.2 80 0.0 Power (W) VGS(th) Variance (V) 3 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 0.2 - 0.4 - 0.6 - 50 2 60 40 20 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* ID - Drain Current (A) 10 10 µs 100 µs 1 1 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 10 ms 100 ms DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 I D - Drain Current (A) 10 7 Package Limited 5 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.9 0.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 5 Si4922BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74459. www.vishay.com 6 Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000