SI4943BDY-T1-E3

Si4943BDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.019 at VGS = - 10 V - 8.4 0.031 at VGS = - 4.5 V - 6.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching - Computer - Game Systems • Battery Switching - 2-Cell Li-Ion SO-8 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View D1 Ordering Information: Si4943BDY-T1-E3 (Lead (Pb)-free) Si4943BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 8.4 - 6.3 - 5.1 - 30 - 1.7 - 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V - 6.7 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 46 62.5 85 110 26 35 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 73073 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 1 Si4943BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS Typ. Max. Unit -3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C -5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltage - 30 A VGS = - 10 V, ID = - 8.4 A 0.016 0.019 VGS = - 4.5 V, ID = - 6.7 A 0.026 0.031 gfs VDS = - 10 V, ID = - 8.4 A 20 VSD IS = - 1.7 A, VGS = 0 V - 0.75 - 1.2 17 25 RDS(on) Forward Transconductancea a VDS = - 5 V, VGS = - 10 V µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = - 10 V, VGS = - 5 V, ID = - 8.4 A 6.7 Rg Gate Resistance f = 1 MHz 2.4 td(on) Turn-On Delay Time VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5 IF = - 1.7 A, dI/dt = 100 A/µs 12 18 11 17 10 15 94 140 60 90 55 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 5 V 24 24 I D - Drain Current (A) I D - Drain Current (A) 4V 18 12 18 12 TC = 125 °C 6 6 25 °C 3V - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4.5 Document Number: 73073 S09-0704-Rev. C, 27-Apr-09 Si4943BDY Vishay Siliconix 0.06 2100 0.05 1800 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 VGS = 4.5 V 0.03 0.02 VGS = 10 V 1200 900 600 Coss Crss 0.01 300 0.00 0 0 5 10 15 20 25 30 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 10 VGS = 10 V ID = 8.4 A VDS = 10 V ID = 8.4 A 1.4 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1500 6 4 1.2 1.0 0.8 2 0.6 - 50 0 0 5 10 15 20 25 30 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.08 30 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.07 TJ = 150 °C 10 TJ = 25 °C 0.06 0.05 ID = 8.4 A 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73073 S09-0704-Rev. C, 27-Apr-09 10 www.vishay.com 3 Si4943BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 50 0.6 40 0.4 30 Power (W) VGS(th) Variance (V) ID = 250 µA 0.2 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10- 2 150 10- 1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 IDM Limited Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 ID(on) Limited 0.1 0.01 0.1 10 ms 100 ms 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73073 S09-0704-Rev. C, 27-Apr-09 Si4943BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73073. Document Number: 73073 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000