SI4943BDY-T1-E3

Si4943BDY New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES ID (A) −8.4 −6.7 rDS(on) (W) 0.019 @ VGS = −10 V 0.031 @ VGS = −4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Load Switching − Computer − Game Systems D Battery Switching − 2-Cell Li-Ion S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4943BDY—E3 Si4943BDY-T1—E3 (with Tape and Reel) P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "20 Unit V −8.4 −6.7 −30 −1.7 2.0 1.3 −55 to 150 −6.3 −5.1 A −0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 73073 S-41527—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 46 85 26 Maximum 62.5 110 35 Unit _C/W 1 Si4943BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 55_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −8.4 A VGS = −4.5 V, ID = −6.7 A VDS = −10 V, ID = −8.4 A IS = −1.7 A, VGS = 0 V −30 0.016 0.026 20 −0.75 −1.2 0.019 0.031 −1 −3 "100 −1 −5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −10 V, Rg = 6 W f = 1 MHz 6 VDS = −10 V, VGS = −5 V, ID = −8.4 A 17 5 6.7 12 11 10 94 60 55 18 17 15 140 90 80 ns W 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D − Drain Current (A) 4V I D − Drain Current (A) 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 6 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 25_C 0 0.0 −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Document Number: 73073 S-41527—Rev. A, 16-Aug-04 www.vishay.com 2 Si4943BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 r DS(on) − On-Resistance ( W ) 0.05 C − Capacitance (pF) 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 30 VGS = 4.5 V 2100 1800 Ciss 1500 1200 900 600 300 0 0 4 8 12 16 20 Crss Coss Vishay Siliconix Capacitance VGS = 10 V ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 8.4 A 8 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.4 A 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 30 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.08 0.07 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 0.06 0.05 0.04 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Gate-to-Source Voltage 10 ID = 8.4 A TJ = 25_C 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 73073 S-41527—Rev. A, 16-Aug-04 www.vishay.com 3 Si4943BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) 0.4 0.2 0.0 −0.2 −0.4 −50 10 Power (W) 50 Single Pulse Power ID = 250 mA 40 30 20 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Ambient rDS(on) Limited IDM Limited 10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TA = 25_C Single Pulse 1s 10 s dc 0.01 0.1 BVDSS Limited 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73073 S-41527—Rev. A, 16-Aug-04 Si4943BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73073 S-41527—Rev. A, 16-Aug-04 www.vishay.com 5