SiA938DJT
www.vishay.com
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
PowerPAK® SC-70-6L Dual
S2
4
• TrenchFET® Gen IV power MOSFET
D1
6
G2
5
• Very low RDS(on) and excellent RDS x Qg
Figure-of-Merit (FOM) in an ultra compact
package footprint
D1
D2
• Compact and thermally enhanced package
05
2.
m
m
m
5m
2.0
Top View
1
3
D2
Bottom View
2
G1
• Provides exceptional versatility for power management
design
1
S1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Marking code: A7
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
RDS(on) max. (Ω) at VGS = 2.5 V
Qg typ. (nC)
ID (A) a
Configuration
D1
D2
• Synchronous rectification
20
0.0215
0.0245
0.048
3.5
4.5
Dual
• Half-bridge power stage
• DC/DC converters
G1
G2
• Battery management
• Load switch
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SC-70
SiA938DJT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current
TC = 25 °C
Continuous source-drain diode current
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
ID
IDM
IS
PD
TJ, Tstg
LIMIT
20
+12 / -8
4.5 a
4.5 a
4.5 a, b, c
4.5 a, b, c
30
4.5 a
1.6 b, c
7.8
5
1.9 b, c
1.2 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t≤5s
RthJA
52
65
Maximum junction-to-ambient b, f
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
12.5
16
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 110 °C/W
S21-0526-Rev. B, 31-May-2021
Document Number: 77643
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA938DJT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
13
-
-
-3.3
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
ΔVDS/TJ
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS , ID = 250 μA
0.6
-
1.5
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +12 V / -8 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
10
On-state drain current a
ID(on)
VDS ≥ 5 V, VGS = 10 V
5
-
-
VGS = 10 V, ID = 5 A
-
0.0170
0.0215
VGS = 4.5 V, ID = 5 A
-
0.0190
0.0245
VGS = 2.5 V, ID = 3 A
-
0.0300
0.0480
VDS = 10 V, ID = 10 A
-
28
-
-
425
-
-
150
-
-
30
-
-
7.6
11.5
-
3.5
5.3
VDS = 10 V, VGS = 4.5 V, ID = 5 A
-
1.2
-
-
0.63
-
f = 1 MHz
0.6
2.8
5.6
-
11
22
-
25
50
-
16
35
tf
-
7
15
td(on)
-
6
15
-
5
10
-
15
30
-
5
10
-
-
4.5
-
-
30
-
0.82
1.2
V
-
9
20
ns
-
2
5
nC
-
4.8
-
-
4.1
-
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 5 A
td(on)
tr
td(off)
tr
td(off)
VDD = 10 V, RL = 1 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 1 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 5 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0526-Rev. B, 31-May-2021
Document Number: 77643
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA938DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Axis Title
Axis Title
30
10000
10000
30
VGS = 10 V thru 3 V
1000
VGS = 2.5 V
15
10
100
1000
20
1st line
2nd line
20
2nd line
ID - Drain Current (A)
25
1st line
2nd line
2nd line
ID - Drain Current (A)
25
15
TC = 25 °C
100
10
5
5
TC = 125 °C
0
0.5
1.0
1.5
2.0
2.5
10
0
10
0
TC = -55 °C
0
3.0
1
2
3
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4
Axis Title
Axis Title
10000
0.10
1000
10000
0.04
100
VGS = 4.5 V
1000
Coss
1st line
2nd line
VGS = 2.5 V
2nd line
C - Capacitance (pF)
1000
0.06
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
Ciss
0.08
100
100
Crss
0.02
VGS = 10 V
10
0
5
10
15
20
25
10
10
0
30
5
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
VDS = 10 V
1000
1st line
2nd line
VDS = 5 V
VDS = 16 V
100
2
10
0
0
2
4
6
8
2nd line
RDS(on) - On-Resistance (Normalized)
8
6
10000
1.5
ID = 5 A
4
20
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
15
ID = 5 A
VGS = 10 V
1.4
VGS = 4.5 V
1.3
1000
1.2
1.1
VGS = 2.5 V
1.0
100
0.9
0.8
10
0.7
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0526-Rev. B, 31-May-2021
1st line
2nd line
0
Document Number: 77643
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA938DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
2nd line
RDS(on) - On-Resistance (Ω)
1000
1st line
2nd line
2nd line
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
10000
0,10
100
0.1
0,08
1000
0,06
1st line
2nd line
100
0,04
100
TJ = 125 °C
0,02
TJ = 25 °C
0
0.2
0.4
0.6
0.8
1.0
10
0
10
0.01
1.2
0
2
4
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
1.4
10000
10000
20
16
ID = 250 μA
1.0
2nd line
P - Power (W)
1000
100
1000
12
1st line
2nd line
1.2
1st line
2nd line
2nd line
VGS(th) (V)
6
8
100
0.8
4
10
0.6
-50
-25
0
25
50
75
0
0.001
100 125 150
0.01
0.1
1
10
100
10
1000
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
Axis Title
100
Limited by RDS(on)
a
10000
IDM limited
10
1000
100 μs
1
1st line
2nd line
2nd line
ID - Drain Current (A)
ID(ON) limited
1 ms
10 ms
100 ms
0.1
TA = 25 °C,
single pulse
100
1, 10 s
DC
BVDSS limited
10
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0526-Rev. B, 31-May-2021
Document Number: 77643
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA938DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
20
8
1st line
2nd line
8
100
Package limited
4
1000
6
1st line
2nd line
1000
12
2nd line
P - Power (W)
16
2nd line
ID - Drain Current (A)
10000
10
4
100
2
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating
a
150
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S21-0526-Rev. B, 31-May-2021
Document Number: 77643
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA938DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Axis Title
1
10000
0.2
Notes
0.1
PDM
1000
0.1
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
t1
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 110 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
0.05
100
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77643.
S21-0526-Rev. B, 31-May-2021
Document Number: 77643
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000