74HC4053D

74HC4053D CMOS Digital Integrated Circuits Silicon Monolithic 74HC4053D 1. Functional Description • Triple 2-Channel Analog Multiplexer/Demultiplexer 2. General The 74HC4053D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The 74HC4053D has a 2 channel × 3 configuration. The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude signal (VCC - VEE) can then be switched by the small logical amplitude (VCC - GND) control signal. For example, in the case of VCC = 5 V, GND = 0 V, VEE = -5 V, signals between -5 V and +5 V can be switched from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be connected to circuits with low input impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) Low power dissipation: ICC = 4.0 µA (max) (VCC = 6.0 V, VEE = GND, Ta = 25 �) (3) High noise immunity: VNIH = VNIL = 28% VCC (min) (4) Low ON-resistance: RON = 50 Ω (typ.) at VCC - VEE = 9 V (5) High degree of linearity: THD = 0.020 % (typ.) at VCC - VEE = 9 V (6) Pin and function compatible with 4053B Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 4. Packaging SOIC16 Start of commercial production 2020-07 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2020-11-24 Rev.2.0 74HC4053D 5. Pin Assignment 6. IEC Logic Symbol 7. Marking ©2016-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-11-24 Rev.2.0 74HC4053D 8. System Diagram 9. Truth Table X: Input Inhibit Input C Input B Input A ON Channel L L L L L L 0X, 0Y, 0Z L H 1X, 0Y, 0Z L L L L H L 0X, 1Y, 0Z H H 1X, 1Y, 0Z L H L H L L 0X, 0Y, 1Z L H 1X, 0Y, 1Z L H L H H L 0X, 1Y, 1Z H H 1X, 1Y, 1Z H X X X None Don't care ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-11-24 Rev.2.0 74HC4053D 10. Absolute Maximum Ratings (Note) Characteristics Supply voltage Symbol Note Rating Unit VCC -0.5 to 7.0 V VEE -7.0 to 0 VCC-VEE -0.5 to 13.0 Input voltage VIN -0.5 to VCC + 0.5 Switch I/O voltage VI/O VEE - 0.5 to VCC + 0.5 V Input diode current IIK ±20 mA II/OK ±20 mA IT ±25 mA I/O diode current Switch through current VCC/ground current ICC Power dissipation PD Storage temperature Tstg (Note 1) V ±50 mA 500 mW -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: PD derates linearly with -8 mW/� above 85 �. 11. Operating Ranges (Note) Characteristics Supply voltage Symbol Note VCC Rating Unit 2.0 to 6.0 V VEE -6.0 to 0 VCC-VEE 2.0 to 12.0 Input voltage VIN 0 to VCC V Switch I/O voltage VI/O VEE to VCC V Operating temperature Topr Input rise and fall times tr,tf (Note 1) -40 to 125 � 0 to 50 µs Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-11-24 Rev.2.0 74HC4053D 12. Electrical Characteristics 12.1. DC Characteristics (Unless otherwise specified, T a = 25 �) Characteristics High-level input voltage Low-level input voltage ON-resistance Symbol Test Condition VIH � VIL RON VEE (V) � VCC (V) Min Typ. Max Unit 2.0 1.50 � � V 4.5 3.15 � � 6.0 4.20 � � 2.0 � � 0.50 4.5 � � 1.35 6.0 � � 1.80 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 85 180 -4.5 4.5 � 55 120 -6.0 6.0 � 50 100 VIN = VIH or VIL VI/O = VCC or VEE II/O ≤ 2 mA GND 2.0 � 150 � GND 4.5 � 70 150 -4.5 4.5 � 50 100 -6.0 6.0 � 45 80 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 10 30 -4.5 4.5 � 5 12 -6.0 6.0 � 5 10 VOS = VCC or GND VIS = GND or VCC VIN = VIH or VIL GND 6.0 � � ±0.06 -6.0 6.0 � � ±0.1 V Ω Difference of ON-resistance between switches ∆RON Input/Output leakage current (Switch OFF) IOFF Input/Output leakage current (Switch ON) II/O VOS = VCC or GND VIN = VIH or VIL GND 6.0 � � ±0.06 -6.0 6.0 � � ±0.1 Control input leakage current IIN VIN = VCC or GND GND 6.0 � � ±0.1 µA Quiescent supply current ICC VIN = VCC or GND GND 6.0 � � 4.0 µA -6.0 6.0 � � 8.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 Ω µA µA 2020-11-24 Rev.2.0 74HC4053D 12.2. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �) Characteristics High-level input voltage Low-level input voltage ON-resistance Difference of ON-resistance between switches Symbol Test Condition VIH � VIL RON ∆RON VEE (V) � VCC (V) Min Max Unit 2.0 1.50 � V 4.5 3.15 � 6.0 4.20 � 2.0 � 0.50 4.5 � 1.35 6.0 � 1.80 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 225 -4.5 4.5 � 150 -6.0 6.0 � 125 VIN = VIH or VIL VI/O = VCC or VEE II/O ≤ 2 mA GND 2.0 � � GND 4.5 � 190 -4.5 4.5 � 125 -6.0 6.0 � 100 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 35 -4.5 4.5 � 15 -6.0 6.0 � 12 VOS = VCC or GND VIS = GND or VCC VIN = VIH or VIL GND 6.0 � ±0.6 -6.0 6.0 � ±1.0 V Ω Ω Input/Output leakage current (Switch OFF) IOFF Input/Output leakage current (Switch ON) II/O VOS = VCC or GND VIN = VIH or VIL GND 6.0 � ±0.6 -6.0 6.0 � ±1.0 Control input leakage current IIN VIN = VCC or GND GND 6.0 � ±1.0 µA Quiescent supply current ICC VIN = VCC or GND GND 6.0 � 40.0 µA -6.0 6.0 � 80.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 6 µA µA 2020-11-24 Rev.2.0 74HC4053D 12.3. DC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �) Characteristics High-level input voltage Low-level input voltage ON-resistance Difference of ON-resistance between switches Symbol Test Condition VIH � VIL RON ∆RON VEE (V) � VCC (V) Min Max Unit 2.0 1.50 � V 4.5 3.15 � 6.0 4.20 � 2.0 � 0.5 4.5 � 1.35 6.0 � 1.8 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 255 -4.5 4.5 � 170 -6.0 6.0 � 145 VIN = VIH or VIL VI/O = VCC or VEE II/O ≤ 2 mA GND 2.0 � � GND 4.5 � 220 -4.5 4.5 � 145 -6.0 6.0 � 115 VIN = VIH or VIL VI/O = VCC to VEE II/O ≤ 2 mA GND 4.5 � 35 -4.5 4.5 � 15 -6.0 6.0 � 12 VOS = VCC or GND VIS = GND or VCC VIN = VIH or VIL GND 6.0 � ±3.0 -6.0 6.0 � ±5.0 V Ω Ω Ω Input/Output leakage current (Switch OFF) IOFF Input/Output leakage current (Switch ON) II/O VOS = VCC or GND VIN = VIH or VIL GND 6.0 � ±3.0 -6.0 6.0 � ±5.0 Control input leakage current IIN VIN = VCC or GND GND 6.0 � ±1.0 µA Quiescent supply current ICC VIN = VCC or GND GND 6.0 � 80.0 µA -6.0 6.0 � 160.0 Note: µA µA Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-11-24 Rev.2.0 74HC4053D 12.4. AC Characteristics (Unless otherwise specified, C L = 50 pF, T a = 25 �, Input: t r = t f = 6 ns) Characteristics Phase difference between input to output Output enable time Output disable time Symbol Test Condition VEE (V) VCC (V) Min Typ. Max Unit φI/O � GND 2.0 � 25 60 ns GND 4.5 � 6 12 GND 6.0 � 5 10 -4.5 4.5 � 4 � GND 2.0 � 50 225 GND 4.5 � 14 45 GND 6.0 � 12 38 -4.5 4.5 � 14 � GND 2.0 � 95 225 GND 4.5 � 30 45 GND 6.0 � 26 38 -4.5 4.5 � 26 � tPZL,tPZH RL = 1 kΩ Figure 1 tPLZ,tPHZ RL = 1 kΩ Figure 1 ns ns Control input capacitance CIN � � � � 5 10 pF Common terminal capacitance CIS Figure 2 -5.0 5.0 � 11 20 pF Switch terminal capacitance COS Figure 2 -5.0 5.0 � 7 15 pF Feedthrough capacitance CIOS Figure 2 -5.0 5.0 � 0.75 2 pF Power dissipation capacitance CPD Figure 2 (Note 1) GND 5.0 � 10 � pF Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC 12.5. AC Characteristics (Unless otherwise specified, C L = 50 pF, T a = -40 to 85 �, Input: t r = t f = 6 ns) Characteristics Phase difference between input to output Output enable time Output disable time Control input capacitance Symbol Test Condition VEE (V) VCC (V) Min Max Unit φI/O � GND 2.0 � 75 ns GND 4.5 � 15 GND 6.0 � 13 tPZL,tPZH RL = 1 kΩ Figure 1 tPLZ,tPHZ RL = 1 kΩ Figure 1 -4.5 4.5 � � GND 2.0 � 280 GND 4.5 � 56 GND 6.0 � 48 ns -4.5 4.5 � � GND 2.0 � 280 GND 4.5 � 56 GND 6.0 � 48 -4.5 4.5 � � � � � 10 pF ns CIN � Common terminal capacitance CIS Figure 2 -5.0 5.0 � 20 pF Switch terminal capacitance COS Figure 2 -5.0 5.0 � 15 pF Feedthrough capacitance CIOS Figure 2 -5.0 5.0 � 2 pF ©2016-2020 Toshiba Electronic Devices & Storage Corporation 8 2020-11-24 Rev.2.0 74HC4053D 12.6. AC Characteristics (Note) (Unless otherwise specified, C L = 50 pF, T a = -40 to 125 �, Input: t r = t f = 6 ns) Characteristics Phase difference between input to output Output enable time Symbol Test Condition VEE (V) VCC (V) Min Max Unit φI/O � GND 2.0 � 85 ns GND 4.5 � 17 GND 6.0 � 15 -4.5 4.5 � � GND 2.0 � 320 GND 4.5 � 64 GND 6.0 � 55 -4.5 4.5 � � GND 2.0 � 320 GND 4.5 � 64 GND 6.0 � 55 -4.5 4.5 � � tPZL,tPZH RL = 1 kΩ Figure 1 Output disable time tPLZ,tPHZ RL = 1 kΩ Figure 1 ns ns Control input capacitance CIN � � � � 10 pF Common terminal capacitance CIS Figure 2 -5.0 5.0 � 20 pF Switch terminal capacitance COS Figure 2 -5.0 5.0 � 15 pF Feedthrough capacitance CIOS Figure 2 -5.0 5.0 � 2 pF Note: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 12.7. Analog Switch Characteristics (T a = 25 �) (Note) Characteristics Sine Wave Distortion Maximum frequency response Symbol THD Test Condition RL = 10 kΩ, CL = 50 pF fIN = 1 kHz VEE (V) VCC (V) Typ. Unit VIN = 4.0 Vp-p -2.25 2.25 0.025 % VIN = 8.0 Vp-p -4.5 4.5 0.020 VIN = 11.0 Vp-p -6.0 6.0 0.018 (Note 1) -2.25 2.25 120 -4.5 4.5 190 -6.0 6.0 VIN is centered at (VCC - VEE)/2 Adjust input for 0 dBm. RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, sine wave Figure 4 -2.25 2.25 -50 -4.5 4.5 -50 -6.0 6.0 -50 RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, square wave (tr = tf = 6 ns) Figure 5 -2.25 2.25 60 -4.5 4.5 140 -6.0 6.0 200 Adjust VIN to obtain 0 dBm at input. RL = 600 Ω, CL = 50 pF, fIN = 1 MHz, sine wave Figure 6 -2.25 2.25 -50 -4.5 4.5 -50 -6.0 6.0 -50 fMAX(I/O) Adjust fIN voltage to obtain 0 dBm at VOS Increase fIN frequency until dB meter reads -3 dB RL = 50 Ω, CL = 10 pF fIN = 1 MHz, sine wave Figure 3 (Note 2) (Note 1) 95 (Note 2) (Note 1) 150 (Note 2) Feed through attenuation (switch OFF) FTH Crosstalk (control input to signal output) Xtalk Crosstalk (between any switches) Xtalk MHz 200 190 dB mV dB Note: These characteristics are determined by design of devices. Note 1: Input COMMON terminal, and measured at SWITCH terminal. Note 2: Input SWITCH terminal, and measured at COMMON terminal. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 9 2020-11-24 Rev.2.0 74HC4053D 13. AC Test Circuit Figure 1 t PLZ , t PHZ , t PZL , t PZH Figure 2 C IOS , C IS , C OS Figure 3 Frequency Response Figure 4 Feedthrough Attenuation ©2016-2020 Toshiba Electronic Devices & Storage Corporation 10 2020-11-24 Rev.2.0 74HC4053D Figure 5 Cross Talk (control input to output signal) Figure 6 Cross Talk (between any two switches) ©2016-2020 Toshiba Electronic Devices & Storage Corporation 11 2020-11-24 Rev.2.0 74HC4053D Package Dimensions Unit: mm Weight: 0.15 g (typ.) Package Name(s) Nickname: SOIC16 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 12 2020-11-24 Rev.2.0 74HC4053D RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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