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HS1M

HS1M

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HS1M - 1.0 AMP. High Efficient Surface Mount Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
HS1M 数据手册
HS1A - HS1M 1.0 AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC Features G lass passivated junction chip. For surface mounted application L ow forward voltage drop Low profile package B uilt-in stain relief, ideal for automatic placement Fast switching for high efficiency H igh temperature soldering: 260oC/10 seconds at terminals P lastic material used carries Underwriters Laboratory Classification 94V0 M echanical Data C ases: Molded plastic Terminals: Pure tin plated, lead free P olarity: Indicated by cathode band P acking: 12mm tape per EIA STD RS-481 W eight: 0.064 gram Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current See Fig.1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 1.0A M aximum DC Reverse Current @ T A = 25 C o at Rated DC Blocking Voltage @ TA=125 C M aximum Reverse Recovery Time ( Note 1) Typical Junction Capacitance ( Note 2 ) M aximum Thermal Resistance (Note 3) O perating Temperature Range o Symbol H S 1A HS 1B HS 1D HS 1F HS 1G HS 1J HS 1K HS 1M U nits V V V A A V RRM V RMS V DC I(AV) IFSM VF IR 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.0 30 600 420 600 800 1000 560 700 800 1000 1.0 1.3 5.0 150 50 20 1.7 V uA uA nS pF o T rr Cj R θJA TJ 75 15 70 -55 to +150 -55 to +150 C/W o o Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A N otes: 2. Measured at 1 MHz and Applied V R=4.0 Volts. 3. Mounted on P.C.Board with 0.2” x 0.2” (5mm x 5mm) Copper Pad Area. C C - 270 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (HS1A THRU HS1M) FIG.1- MAXIMUM AVERAGE FORWARD CURRENT DERATING 1.2 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 AVERAGE FORWARD CURRENT. (A) 1.0 INSTANTANEOUS REVERSE CURRENT. ( A) 0.8 100 Tj=100 0C 0.6 0.4 10 Tj=25 0C 0.2 0 80 90 100 110 120 O 130 140 150 LEAD TEMPERATURE. ( C) 1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 40 PEAK FORWARD SURGE CURRENT. (A) 35 30 25 20 15 10 5 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT. (A) Tj=25 0C FIG.4- TYPICAL JUNCTION CAPACITANCE 70 60 10 JUNCTION CAPACITANCE.(pF) HS 0.1 0.01 0 .2 .4 .6 .8 1.0 1.2 40 30 20 HS HS 1J- 1A -HS 1M 1G HS 10 0 0.1 0.5 1 2 5 10 20 50 100 200 500 1000 HS 1.4 1J -H 50 1.0 S1 1.6 FORWARD VOLTAGE. (V) trr 1cm SET TIME BASE FOR 5/ 10ns/ cm REVERSE VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A Version: B07 M 1G HS 1A 1 HS D

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HS1M
    •  国内价格
    • 1+0.1386
    • 30+0.13365
    • 100+0.1287
    • 500+0.1188
    • 1000+0.11385
    • 2000+0.11088

    库存:113

    HS1M
    •  国内价格
    • 50+0.13501
    • 500+0.12151
    • 5000+0.11251
    • 10000+0.10801
    • 30000+0.10351
    • 50000+0.10081

    库存:4950