Si4364DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "16 20
Steady State
Unit
V
13 10 60 A 1.3 1.6 1 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
15
2.9 3.5 2.2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70680 S-03662—Rev. C, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF
Symbol
Typical
29 67 13
Maximum
35 80 16
Unit
_C/W
2-1
Si4364DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "16 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 20 A IS = 2.9 A, VGS = 0 V 30 0.0035 0.0043 90 0.70 1.1 0.0045 0.0055 S V 0.8 1.8 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 20 A 48 16 11 1.1 17 16 165 55 40 1.9 30 30 250 90 80 ns W 75 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60 VGS = 10 thru 3 V 50 50 60
Transfer Characteristics
I D - Drain Current (A)
40
I D - Drain Current (A)
40
30
30
20
20 TC = 125_C 10 25_C -55_C
10 2V 0 0 1 2 3 4 5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2-2
Document Number: 70680 S-03662—Rev. C, 14-Apr-03
Si4364DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.010 9000 Ciss 0.008 C - Capacitance (pF) 7200
Vishay Siliconix
Capacitance
r DS(on) - On-Resistance ( W )
0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002
5400
3600
1800
Crss
Coss
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 20 A 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 20 A
4
r DS(on) - On-Resistance ( W) (Normalized)
5
1.4
1.2
3
1.0
2
1
0.8
0 0 14 28 42 56 70
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.025
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
0.020
I S - Source Current (A)
0.015
TJ = 25_C
0.010 ID = 20 A 0.005
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2
0.000 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 70680 S-03662—Rev. C, 14-Apr-03
www.vishay.com
2-3
Si4364DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 ID = 250 mA 60 50
Single Pulse Power
0.2 V GS(th) Variance (V)
-0.0 Power (W)
40
-0.2
30
-0.4
20
-0.6
10
-0.8 -50
-25
0
25
50
75
100
125
150
0 10 - 2
10 - 1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 67_C/W
Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
2-4
Document Number: 70680 S-03662—Rev. C, 14-Apr-03
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