SI4378DY-T1-E3

Si4378DY New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0027 @ VGS = 4.5 V 0.0042 @ VGS = 2.5 V ID (A) 25 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100% Rg Tested APPLICATIONS D Synchronous Rectification D Point-Of-Load D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G Ordering Information: Si4378DY—E3 Si4378DY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 10 secs 20 "12 25 20 70 2.9 40 3.5 2.2 Steady State Unit V 19 13 A 1.3 1.6 1 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72918 S-40854—Rev. A, 03-May-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 Si4378DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 25 A VGS = 2.5 V, ID = 22 A VDS = 10 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0022 0.0034 150 0.72 1.1 0.0027 0.0042 0.6 1.8 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W 0.8 VDS = 10 V, VGS = 4.5 V, ID = 25 A VDS = 10 V, VGS = 0 V, f = 1 MHz 8500 1250 650 55 16 10 1.3 85 65 140 50 50 2.0 130 100 210 80 80 ns W nC pF Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 5 thru 2.5 V 50 40 30 20 2V 10 0 0 1 2 3 4 5 50 40 30 20 TC = 125_C 10 0 0.0 25_C −55_C 0.5 1.0 1.5 2.0 2.5 60 Transfer Characteristics I D − Drain Current (A) VDS − Drain-to-Source Voltage (V) www.vishay.com I D − Drain Current (A) VGS − Gate-to-Source Voltage (V) Document Number: 72918 S-40854—Rev. A, 03-May-04 2 Si4378DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.006 0.005 0.004 0.003 VGS = 4.5 V 0.002 0.001 0.000 0 10 20 30 40 50 60 VGS = 2.5 V C − Capacitance (pF) Vishay Siliconix On-Resistance vs. Drain Current 10000 Capacitance Ciss r DS(on) − On-Resistance ( W ) 8000 6000 4000 Crss 2000 Coss 0 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 10 20 VDS = 10 V ID = 25 A Gate Charge 1.8 1.6 rDS(on) − On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 25 A 30 40 50 60 70 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.015 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.012 ID = 25 A I S − Source Current (A) 0.009 TJ = 25_C 0.006 0.003 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72918 S-40854—Rev. A, 03-May-04 0.000 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4378DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) −0.0 Power (W) −0.2 −0.4 −0.6 −0.8 −50 ID = 250 mA 60 50 Single Pulse Power 40 30 20 10 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 10 ms 1 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72918 S-40854—Rev. A, 03-May-04 Si4378DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72918 S-40854—Rev. A, 03-May-04 www.vishay.com 5