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SI4378DY_RC

SI4378DY_RC

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SI4378DY_RC - R-C Thermal Model Parameters - Vishay Siliconix

  • 数据手册
  • 价格&库存
SI4378DY_RC 数据手册
Si4378DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 2.1646 22.7237 31.7971 23.2083 Ambient 20.8422 m 47.2729 m 2.0384 3.7242 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 253.8192 m 4.1485 6.6629 4.9847 Foot 18.9670 155.1850 m 257.9792 m 13.8749 m Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73820 Revision 02-Mar-06 www.vishay.com 1 Si4378DY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note: NA indicates not applicable Ambient 3.7489 22.2239 32.9041 21.1242 Ambient 12.2646 m 32.9132 m 1.1221 1.2290 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 4.7871 3.9192 6.5521 755.2501 m Foot 10.3395 m 32.2002 m 127.3779 m 3.8073 Thermal Capacitance (Joules/°C) Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73820 Revision 02-Mar-06 Si4378DY_RC Vishay Siliconix Document Number: 73820 Revision 02-Mar-06 www.vishay.com 3
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