SI4434DY-E3

Si4434DY New Product Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PWM-OptimzedTrenchFET 10% R g Testd Avalnche Tested ID (A) 3.0 2.9 Power MOSFET PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) 0.155 @ V 0.162 @ V GS GS APPLICATIONS Primary Side Switch In: − − − D = 10 V = .0 V 6 SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4434DY—E3 Si4434DY-T1—E3 (with Tape and Reel) 6 5 7 8 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source V oltage tner uC ia D s o tn tner uC ia D d sl P )noitcud C e D( n r c uoS s itn C tner uC hc al v A ygrenE hc al v A s uP gniS noitap s D rew P mu x M egnaRrutpm Te egarotSdnicuJgtarepO a a Symbol VDS VGS T A 52 = T A 07 = w C w C I MD IS Hm 1.0 = L Hm 1.0 = L T A 52 = T A 07 = w C w C I SA E SA PD 10 secs 250 "20 3.0 2.4 30 Steady State Unit V V (T J 051= wa C) ID 2.1 1.7 A 1.3 13 8.4 3.1 2.0 1.56 1.0 − W mJ 2.6 T J T, sg t THERMAL RESISTANCE RATINGS Parameter tneibmA-o c uJ ixaM M )niarD( to F- cnuJ m ixaM Notes a. .draoB 4RF 1 x n det uoM cafr S Numer: 2657 b ,B ec-30 D-51 www..com vishay i J ti at t A bi a Symbol t vces01 eta S yd eta S yd R J Ah t Typical 3 65 17 Maximum 40 80 21 Unit w C/W R J Fh t ocumet D n ev. R—65 23-S 1 Si4434DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate ThresholdVoltage egak L ydoB- t G tner uC ia D g lo V etaG r Z tner uC ia D S-nO e c n a t s i R S - O r u o n i a D nO ecruoS ecnatsi R S T draw oF draw oF e iD ranscodute oltage V a a a Symbol Test Condition Min Typ Max Unit VGS(th) I SG I SD I ) n(oD a VDS = V GS, ID = 250 mA V SD V, 0= GS 2.0 4.0 "10 1 nA V = GS "V02 V0= J V S D V , 052 = V S D V , 052 = V SD V GS V GS 0.6 = wV, 01 01 = I, V D GS T , V0= GS 5= V w C 20 0.129 0.15 0.13 14 0.162 15 mA A W S 01 = A 0.3 = D r ) n(o S D ) g sf V DS I, V D GS A 9.2 = A 0.3 = V0= V S D I , V 51 = I S V ,A 8.2 = 0.75 1.2 V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ime TyalDnO-ru T emi T s R emi T yal D f O-nru T ime TlaF ime TyrvocRseniaD-ruoS .a .b Notes htdiw eslup ; P yb de tnar uG v 30 melcytud,s v 2%. t ) f (od tf tr I F /A 0 1 = td i , 8.2 ms 10 t ) n (o d tr I D ^V,A0.4 VD R, V01= N GE Qg Q gs Q gd Rg 0.6 VDS = 100 V, VGS = 10 V, I D = 3.0 A 34 6.8 10.5 1.2 16 , R L 52 = R , V 01 = g 50 nC 1.8 25 W W 6= 23 W 47 19 150 30 70 35 ns .gnitse o cud rp jb s ton , gi ed TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics 30 40 V GS = 01 urht 6 V 24 30 25 18 20 12 − − 10 6 5 15 35 Transfer Characteristics TC = 25 C 1 − 0 0 2 VDS − www..com vishay 4 6 8 10 0 0 1 2 − DocumentNumber: 2562 7 S-32556Rev. — , 15-Dec-03 B 3 4 5 6 2 Si4434DY New Product TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) On-Resistance vs. Drain Current 250 Vishay Siliconix Capacitance W) 20 150 − 10 − 50 0 0 − 50 10 − 150 20 250 Gate Charge 2.5 On-Resistance vs. Junction Temperature W) 2.0 1.5 − − 1.0 0.5 − − − TJ − Source-Drain Diode Forward Voltage 50 0.25 On-Resistance vs. Gate-to-Source Voltage W) 0.2 I D A 0.3 = 0.15 T J 051 = 10 C − T J 52 = C 0.5 − 1 0. 0. 0.2 0.4 V DS ocumet D n ev. R—65 23-S Numer: 2657 b ,B ec-30 D-51 0.6 − 0.8 1.0 1.2 0.1 0 2 − 4 6 8 10 www..com vishay 3 Si4434DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Threshold Voltage Single Pulse Power 50 V GS(th) Variance (V) mA 40 − − − − − TJ − 0.01 0.1 1 Time (sec) 10 100 Safe Operating Area, Junction-to-Case − VDS − Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 5.0 = elcyC tuD 0.2 0.1 0.1 0.5 0.2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 65 C/W 3. TJM − esluP gniS 0.1 − 10 − − − Square ave W www..com vishay Pulse Duration (sec) 4 DocumentNumber: 2562 7 S-32556Rev. — , 15-Dec-03 B Si4434DY New Product TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix Normalized Effectiv Transient e Thermal Impedance − 10 − − − 10 Pulse Duration (sec) 100 Square ave W ocumet D n ev. R—65 23-S Numer: 2657 b ,B ec-30 D-51 www..com vishay 5