SI4434DY

Si4434DY New Product Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested ID (A) 3.0 2.9 PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) 0.155 @ VGS = 10 V 0.162 @ VGS = 6.0 V APPLICATIONS D Primary Side Switch In: − Telecom Power Supplies − Distributed Power Architectures − Miniature Power Modules D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4434DY—E3 Si4434DY-T1—E3 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 250 "20 3.0 2.4 30 2.6 13 8.4 3.1 2.0 Steady State Unit V 2.1 1.7 A 1.3 mJ 1.56 1.0 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72562 S-32556—Rev. B, 15-Dec-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 33 65 17 Maximum 40 80 21 Unit _C/W 1 Si4434DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 250 V, VGS = 0 V VDS = 250 V, VGS = 0 V, TJ = 55_C VDS w 10 V, VGS = 10 V VGS = 10 V, ID = 3.0 A VGS = 6.0 V, ID = 2.9 A VDS = 15 V, ID = 3.0 A IS = 2.8 A, VGS = 0 V 20 0.129 0.131 14 0.75 1.2 0.155 0.162 W S V 2.0 4.0 "100 1 15 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 100 V, RL = 25 W V, ID ^ 4.0 A, VGEN = 10 V, Rg = 6 W 0.6 VDS = 100 V, VGS = 10 V, ID = 3.0 A 34 6.8 10.5 1.2 16 23 47 19 100 1.8 25 35 70 30 150 ns W 50 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 24 I D − Drain Current (A) I D − Drain Current (A) 40 35 30 5V 25 20 15 10 5 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0 1 Transfer Characteristics 18 12 TC = 125_C 25_C −55_C 2 3 4 5 6 6 VGS − Gate-to-Source Voltage (V) Document Number: 72562 S-32556—Rev. B, 15-Dec-03 2 Si4434DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) − On-Resistance ( W ) 2500 Vishay Siliconix Capacitance C − Capacitance (pF) 0.24 2000 Ciss 1500 0.18 VGS = 6 V 0.12 VGS = 10 V 1000 Coss Crss 0.06 500 0.00 0 8 16 24 32 40 0 0 50 100 150 200 250 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 100 V ID = 3.0 A 8 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.0 A 2.0 6 r DS(on) − On-Resistance ( W) (Normalized) 14 21 28 35 1.5 4 2 1.0 0 0 7 Qg − Total Gate Charge (nC) 0.5 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.20 ID = 3.0 A 0.15 I S − Source Current (A) TJ = 150_C 10 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72562 S-32556—Rev. B, 15-Dec-03 www.vishay.com 3 Si4434DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 60 50 ID = 250 mA Power (W) 40 Single Pulse Power 0.5 V GS(th) Variance (V) 0.0 30 20 −0.5 −1.0 10 0 0.01 −1.5 −50 −25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Case I D − Drain Current (A) 10 Limited by rDS(on) 1 1 ms 10 ms 0.1 TC = 25_C Single Pulse 100 ms 1s 10 s dc 0.01 0.001 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72562 S-32556—Rev. B, 15-Dec-03 Si4434DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 1000 Document Number: 72562 S-32556—Rev. B, 15-Dec-03 www.vishay.com 5