SI4503DY

Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET PRODUCT SUMMARY VDS (V) N-Channel (Channel 2) P-Channel (Channel 1) 30 FEATURES rDS(on) (W) 0.018 @ VGS = 10 V 0.027 @ VGS = 4.5 V 0.042 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) 8.8 7.2 –4.5 –3.7 D TrenchFETr Power MOSFET APPLICATIONS D Level Shift D Load Switch –8 S1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D2 D2 D2 D1 S2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS N-Channel 10 sec. Steady State 30 "20 8.8 6.5 5.2 30 2.0 2.27 1.1 1.25 0.8 –1.2 1.38 0.88 –55 to 150 –4.5 –3.6 7.0 P-Channel 10 sec. Steady State –8 "8 –3.8 –3.0 –20 0.9 1.0 0.64 Unit V ID IDM IS PD TJ, Tstg A 1.45 W _C THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 71770 S-20894—Rev. B, 17-Jun-02 www.vishay.com Steady-State Steady-State RthJA RthJF P- Channel Typ 75 100 53 Symbol Typ 45 85 25 Max 55 100 30 Max 90 125 65 Unit _C/W 1 Si4503DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "8 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –6.4 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = –6.4 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VDS = –5 V, VGS = –4.5 V VGS = 10 V, ID = 8.8 A Drain-Source On-State Resistanceb rDS(on) VGS = –4.5 V, ID = –4.5 A VGS = 4.5 V, ID = 7.2 A VGS = –2.5 V, ID = –3.7 A Forward Transconductanceb gfs VDS = 15 V, ID = 8.8 A VDS = –15 V, ID = –4.5 A IS = 2.0 A, VGS = 0 V IS = –1.2 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 –20 0.015 0.034 0.022 0.048 20 13 0.71 –0.70 1.1 –1.1 V S 0.018 0.042 0.027 0.060 W A 0.8 –0.45 "100 "100 1 –1 5 –5 mA V Symbol Test Condition Min Typa Max Unit Gate-Body Leakage IGSS nA Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 8.8 A Gate-Source Charge Qgs P-Channel VDS = –4 V, VGS = –5 V, ID = –4.5 A Gate-Drain Charge Qgd N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –4 V, RL = 4 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.7 A, di/dt = 100 A/ms N-Ch P-Ch 14.5 15 3.3 3.0 6.6 2.0 13 20 9 50 35 110 17 60 35 60 20 40 18 100 50 220 30 120 70 100 ns nC 20 25 Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 Si4503DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50 Vishay Siliconix N−CHANNEL Transfer Characteristics 30 30 20 3V 20 TC = 125_C 10 25_C –55_C 10 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 1800 Capacitance DS(on) – On-Resistance ( W ) C – Capacitance (pF) 0.04 1500 Ciss 1200 0.03 VGS = 4.5 V 0.02 900 VGS = 10 V 600 Coss r 0.01 300 Crss 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 8.8 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 Qg – Total Gate Charge (nC) Document Number: 71770 S-20894—Rev. B, 17-Jun-02 0.4 –50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.8 A 6 4 2 r DS(on) – On-Resistance (W ) (Normalized) –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si4503DY Vishay Siliconix New Product N−CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 DS(on) – On-Resistance ( W ) 0.08 ID = 8.8 A 0.06 I S – Source Current (A) TJ = 150_C 10 TJ = 25_C 0.04 0.02 r 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 V GS(th) Variance (V) 0.2 –0.0 –0.2 –0.4 –0.6 –0.8 –1.0 –50 0 –25 0 25 50 75 100 TJ – Temperature (_C) 125 150 0.01 10 ID = 250 mA Power (W) 30 50 Single Pulse Power 40 20 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 73_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 100 600 www.vishay.com 4 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 Si4503DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 2.5 V 16 VGS = 5 thru 3 V I D – Drain Current (A) 12 2V I D – Drain Current (A) 12 16 20 TC = –55_C 25_C P−CHANNEL Transfer Characteristics 125_C 8 1.8 V 8 4 1.5 V 4 1V 0 0 1 2 3 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 VGS = 1.8 V r DS(on) – On-Resistance ( W ) 0.16 C – Capacitance (pF) 2000 2500 Capacitance Ciss 0.12 1500 0.08 VGS = 2.5 V VGS = 4.5 V 1000 Coss 500 Crss 0.04 0.00 0 4 8 12 16 20 0 0 2 4 6 8 ID – Drain Current (A) Document Number: 71770 S-20894—Rev. B, 17-Jun-02 VDS – Drain-to-Source Voltage (V) www.vishay.com 5 Si4503DY Vishay Siliconix New Product P−CHANNEL On-Resistance vs. Junction Temperature 1.50 VDS = 4 V ID = 4.5 A VGS = 4.5 V ID = 4.5 A 1.25 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 5 V GS – Gate-to-Source Voltage (V) 3 2 r DS(on) – On-Resistance (W ) (Normalized) 4 1.00 1 0 0 4 8 12 16 0.75 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) 20 Source-Drain Diode Forward Voltage 0.20 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C r DS(on)– On-Resistance ( W ) 10 I S – Source Current (A) 0.16 0.12 ID = 4.5 A 0.08 TJ = 25_C 0.04 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.00 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 80 Single Pulse Power, Juncion-To-Ambient 60 V GS(th) Variance (V) 0.2 ID = 250 mA Power (W) 40 0.0 20 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) www.vishay.com 6 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 Si4503DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix P−CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71770 S-20894—Rev. B, 17-Jun-02 www.vishay.com 7