SI9803DY

Si9803DY Vishay Siliconix P-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) –25 rDS(on) (W) 0.040 @ VGS = –4.5 V 0.060 @ VGS = –3.0 V ID (A) "5.9 "4.8 SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –25 "12 "5.9 "4.7 "40 –2.1 2.5 Unit V A W 1.6 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70638 S-49559—Rev. C, 11-Feb-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9803DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb On Resistance Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –25 V, VGS = 0 V VDS = –25 V, VGS = 0 V, TJ = 70_C VDS v–5 V, VGS = –4.5 V VGS = –4.5 V, ID = –5.9 A VGS = –3.0 V, ID = –4.8 A VDS = –9 V, ID = –5.9 A IS = –2.1 A, VGS = 0 V –40 0.033 0.044 18 –0.75 –1.2 0.040 0.060 –0.6 "100 –1 –5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.6, di/dt = 100 A/ms VDD = –10 V, RL = 10 W V, 10 ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –10 V VGS = –4.5 V, ID = –5 9 A V, 45V 5.9 15.8 3.0 5.4 20 30 53 31 80 40 60 100 60 120 ns 25 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design aid only; not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70638 S-49559—Rev. C, 11-Feb-98 Si9803DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5.5 thru 3.5 V 32 I D – Drain Current (A) 3V 24 I D – Drain Current (A) 32 40 TC = –55_C 25_C Transfer Characteristics 24 125_C 16 16 2.5 V 8 2V 1.5 V 0 0 2 4 6 8 10 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 3000 Capacitance r DS(on) – On-Resistance ( Ω ) 0.12 C – Capacitance (pF) 2500 Ciss 2000 0.09 VGS = 3 V 0.06 VGS = 4.5 V 0.03 1500 Coss 1000 500 Crss 0 0 8 16 24 32 40 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 4 8 12 16 0 –50 VDS = 10 V ID = 5.9 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.9 A 1.2 0.8 0.4 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70638 S-49559—Rev. C, 11-Feb-98 www.vishay.com S FaxBack 408-970-5600 3 Si9803DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.15 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.12 ID = 5.9 A 0.09 I S – Source Current (A) TJ = 150_C 10 0.06 TJ = 25_C 0.03 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 100 Single Pulse Power 0.6 ID = 250 mA V GS(th) Variance (V) 0.4 Power (W) 80 60 0.2 40 0.0 –0.2 20 –0.4 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70638 S-49559—Rev. C, 11-Feb-98