SIP32411

SiP32411 Vishay Siliconix 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION The SiP32411 is a slew rate controlled load switch that is designed for 1.1 V to 5.5 V operation. The device guarantees low switch on-resistance at 1.2 V input. It features a controlled soft-on slew rate of typical 150 µs that limits the inrush current for designs of capacitive load or noise sensitive loads. The device features a low voltage control logic interface (On/Off interface) that can interface with low voltage digital control without extra level shifting circuit. It also integrates an output discharge switch that enables fast shutdown load discharge. When the switch is off, it provides the reverse blocking to prevent high current flowing into the power source. The SiP32411DN is in TDFN4 package of 1.2 mm by 1.6 mm. It supports over 2 A of continuous current. The SiP32411DR is in SC70-6 package. FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 1.1 V to 5.5 V operation voltage range • 62 m typical from 2 V to 5 V for SiP32411DN • 101 m typical from 2 V to 5 V for SiP32411DR • Low RON down to 1.2 V • Slew rate controlled turn-on: 150 µs at 3.6 V • Fast shutdown load discharge • Low quiescent current < 1 µA when disabled 6.7 µA at VIN = 1.2 V • Switch off reversed blocking • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • • • • • • Cellular phones Portable media players Digital camera GPS Computers Portable instruments and healthcare devices TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32411 C IN 4.7 µF EN EN GND C OUT 0.1 µF GND GND Figure 1 - SiP32411 Typical Application Circuit Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix ORDERING INFORMATION Temperature Range - 40 °C °C to 85 °C Package SC70-6 TDFN4 1.2 mm x 1.6 mm Marking MBxx AEx Part Number SiP32411DR-T1-GE3 SiP32411DNP-T1-GE4 Notes: x = Lot code GE3 and GE4 denote halogen-free and RoHS compliant ABSOLUTE MAXIMUM RATINGS Parameter Supply Input Voltage (VIN) Enable Input Voltage (VEN) Output Voltage (VOUT) Maximum Continuous Switch Current (Imax.) Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % Duty Cycle) ESD Rating (HBM) Junction Temperature (TJ) Thermal Resistance (JA)a Power Dissipation (PD)a 6 pin SC70-6b 4 pin TDFN4 1.2 mm x 1.6 mmc 6 pin SC70-6b 4 pin TDFN4 1.2 mm x 1.6 mmc SC70-6 package TDFN4 1.2 mm x 1.6 mm SC70-6 package TDFN4 1.2 mm x 1.6 mm Limit - 0.3 to 6 - 0.3 to 6 - 0.3 to VIN + 0.3 1.8 2.4 2.2 3 4000 - 40 to 125 240 170 230 324 V °C °C/W mW A V Unit Notes: a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout. b. Derate 4.5 mW/°C above TA = 70 °C, see PCB layout. c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Input Voltage Range (VIN) Operating Temperature Range Limit 1.1 to 5.5 - 40 to 85 Unit V °C www.vishay.com 2 Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix SPECIFICATIONS Test Conditions Unless Specified VIN = 5 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) VIN = 1.2 V, EN = active VIN = 1.8 V, EN = active Quiescent Current IQ VIN = 2.5 V, EN = active VIN = 3.6 V, EN = active VIN = 4.3 V, EN = active VIN = 5 V, EN = active Off Supply Current Off Switch Current Reverse Blocking Current IQ(off) IDS(off) IRB EN = inactive, OUT = open EN = inactive, OUT = GND VOUT = 5 V, VIN = 1.2 V,VEN = inactive VIN = 1.2 V, IL = 100 mA, TA = 25 °C VIN = 1.8 V, IL = 100 mA, TA = 25 °C SC70-6 VIN = 2.5 V, IL = 100 mA, TA = 25 °C VIN = 3.6 V, IL = 100 mA, TA = 25 °C VIN = 4.3 V, IL = 100 mA, TA = 25 °C On-Resistance RDS(on) VIN = 5 V, IL = 100 mA, TA = 25 °C VIN = 1.2 V, IL = 100 mA, TA = 25 °C VIN = 1.8 V, IL = 100 mA, TA = 25 °C TDFN4 1.2 mm x 1.6 mm VIN = 2.5 V, IL = 100 mA, TA = 25 °C VIN = 3.6 V, IL = 100 mA, TA = 25 °C VIN = 4.3 V, IL = 100 mA, TA = 25 °C VIN = 5 V, IL = 100 mA, TA = 25 °C On-Resistance Temp.-Coefficient TCRDS SC70-6 package TDFN4 1.2 mm x 1.6 mm package VIN = 1.2 V VIN = 1.8 V EN Input Low Voltagec VIL VIN = 2.5 V VIN = 3.6 V VIN = 4.3 V VIN = 5 V VIN = 1.2 V VIN = 1.8 V EN Input High Voltagec VIH VIN = 2.5 V VIN = 3.6 V VIN = 4.3 V VIN = 5 V EN Input Leakage Output Pulldown Resistance Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time ISINK RPD td(on) t(on) td(off) VIN = 3.6 V, RLOAD = 10 , TA = 25 °C VEN = 5.5 V EN = inactive, TA = 25 °C Limits - 40 °C to 85 °C Min.a 1.1 0.9 d Parameter Operating Voltagec Symbol VIN Typ.b 6.7 14 25 40 52 71 105 101 101 101 101 101 66 62 62 62 62 62 4300 3400 217 140 150 0.27 Max.a 5.5 14 24 40 60 75 99 1 1 10 125 120 120 120 120 120 76 72 72 72 72 72 0.3 0.4d 0.5d 0.6d 0.7d 0.8d 1 280 210 220 1 Unit V µA m ppm/°C V 1.2d 1.4d 1.6d 1.7d 1.8 -1 80 - µA  µs Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. d. Not tested, guarantee by design. Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix PIN CONFIGURATION OUT 1 6 N/C EN GND 2 5 GND 4 GND 1 OUT IN EN 3 4 IN 3 2 GND Top View Bottom View Figure 2 - SC70-6 Package Figure 3 - TDFN4 1.2 mm x 1.6 mm Package PIN DESCRIPTION Pin Number SC70-6 TDFN4 4 3 2, 5 2 3 4 1 1 Name IN GND EN OUT Function This pin is the n-channel MOSFET drain connection. Bypass to ground through a 2.2 µF capacitor. Ground connection Enable input This pin is the n-channel MOSFET source connection. Bypass to ground through a 0.1 µF capacitor. TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 100 80 VIN = 5 V 70 80 IQ - Quiescent Current (µA) IQ - Quiescent Current (µA) 60 50 VIN = 3.6 V 40 30 20 10 VIN = 1.2 V 60 40 20 0 1.0 1.5 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Figure 4 - Quiescent Current vs. Input Voltage 0.9 0.8 Figure 5 - Quiescent Current vs. Temperature 1000 100 IQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 10 1 0.1 0.01 0.001 VIN = 1.2 V VIN = 3.6 V VIN = 5 V 0.0001 - 40 - 20 0 VIN (V) 20 40 Temperature (°C) 60 80 100 Figure 6 - Off Supply Current vs. Input Voltage www.vishay.com 4 Figure 7 - Off Supply Current vs. Temperature Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 0.9 0.8 IDS(off) - Off Switch Current (nA) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 IDS(off) - Off Switch Current (nA) 1000 100 VIN = 5 V 10 VIN = 3.6 V 1 0.1 0.01 VIN = 1.2 V 0.001 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 8 - Off Switch Current vs. Input Voltage 76 TDFN4 1.2 mm x 1.6 mm package 74 80 RDS - On-Resistance (mΩ) 75 70 65 60 55 50 IO = 0.5 A 60 1.0 1.5 2.0 2.5 IO = 0.1 A 45 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 85 Figure 9 - Off Switch Current vs. Temperature TDFN4 1.2 mm x 1.6 mm package IO = 0.1 A VIN = 5 V RDS - On-Resistance (mΩ) 72 IO = 2 A 70 68 66 64 62 IO = 1.5 A IO = 1.0 A - 40 - 20 0 20 40 60 Temperature (°C) 80 100 Figure 10 - RDS(on) vs. VIN for TDFN4 package 130 IO = 2 A 125 RDS - On-Resistance (mΩ) 120 115 110 105 100 95 90 85 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) IO = 0.5 A IO = 0.1 A IO = 1.5 A IO = 1.0 A SC70-6 package Figure 11 - RDS(on) vs. Temperature for TDFN4 package 130 SC70-6 package 120 RDS - On-Resistance (mΩ) IO = 0.1 A VIN = 5 V 110 100 90 80 70 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Figure 12 - RDS(on) vs. VIN for SC70-6 package Figure 13 - RDS(on) vs. Temperature for SC70-6 package Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 600 RPD - Output Pulldown Resistance (Ω) RPD - Output Pulldown Resistance (Ω) 550 500 450 400 350 300 250 200 150 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VOUT = VIN 300 VOUT = VIN = 5 V 280 260 240 220 200 180 160 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 14 - Output Pull Down vs. Input Voltage 100 VIN = 1.2 V VEN = 0 V EN Threshold Voltage (V) 10 IIN - Input Current (nA) 1.5 1.4 1.3 1.2 Figure 15 - Output Pull Down vs. Temperature VIH VIL 1.1 1.0 0.9 0.8 0.7 0.6 1 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VOUT (V) VIN (V) Figure 16 - Reverse Blocking Current vs. Output Voltage 120 115 td(on) - Turn-On Delay Time (µs) 110 105 100 95 90 85 80 - 40 VIN = 5 V CL = 0.1 µF RL = 10 Ω Figure 17 - EN Threshold Voltage vs. Input Voltage 200 190 t(on) - Rise Switching Time (µs) 180 170 160 150 140 130 - 40 VIN = 5 V CL = 0.1 µF RL = 10 Ω - 20 0 20 40 60 80 100 - 20 0 Temperature (°C) 20 40 Temperature (°C) 60 80 100 Figure 18 - Turn-On Delay Time vs. Temperature Figure 19 - Rise Time vs. Temperature www.vishay.com 6 Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 0.22 VIN = 5 V CL = 0.1 µF RL = 10 Ω td(off) - Turn-Off Delay Time (µs) 0.20 0.18 0.16 0.14 0.12 0.10 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Figure 20 - Turn-Off Delay Time vs. Temperature TYPICAL WAVEFORMS Figure 21 - Switching (VIN = 3.6 V) Figure 22 - Turn-Off (VIN = 3.6 V) Figure 23 - Switching (VIN = 5 V) Figure 24 - Turn-Off (VIN = 5 V) Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix BLOCK DIAGRAM Reverse Blocking IN OUT EN Control Logic Charge Pump Turn-On Slew Rate Control + - GND Figure 25 - Functional Block Diagram PCB LAYOUT Top Bottom Figure 26 - PCB Layout for TDFN4 1.2 mm x 1.6 mm (board size: 1 inch x 1 inch) Top Figure 27 - PCB Layout for SC70-6 (board size: 1 inch x 1 inch) Bottom www.vishay.com 8 Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32411 Vishay Siliconix DETAILED DESCRIPTION SiP32411 is an n-channel power MOSFET designed as high side load switch with slew rate control to prevent in-rush current. Once enable the device charge pumps the gate of the power MOSFET to 5 V gate to source voltage while controlling the slew rate of the turn on time. The mostly constant gate to source voltage keeps the on resistance low through out the input voltage range. When disable, the output discharge circuit turns on to help pull the output voltage to ground more quickly. Also in disable mode, the reverse blocking circuit is activated to prevent current from going back to the input in case the output voltage is higher than the input voltage. Input voltage is needed for the reverse blocking circuit to work properly, it can be as low as VIN(min). 240 °C/W for SC70-6 and 170 °C/W for TDFN4) the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance for the TDFN4 1.2 mm x 1.6 mm package, J-A = 170 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 170 APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 2.2 µF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the SiP32411 to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP32411 turn on slew rate time. There are no ESR or capacitor type requirement. Enable The EN pin is compatible with both TTL and CMOS logic voltage levels. Protection Against Reverse Voltage Condition The SiP32411 contains a reverse blocking circuitry to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. A supply voltage as low as the minimum required input voltage is necessary for this circuitry to work properly. Thermal Considerations The SiP32411 is designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.8 A for SC70-6 package and 2.4 A for TDFN4 package, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 324 mW. So long as the load current is below the 2.4 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C occurs at an input voltage of 1.2 V and is equal to 75 m. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x T) Where TC is 3400 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 75 m x (1 + 0.0034 x (70 °C - 25 °C)) = 86.5 m The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in case is 1.94 A. Under the stated input voltage condition, if the 1.94 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66710. Document Number: 66710 S11-1694-Rev. E, 22-Aug-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TDFN4 1.2 x 1.6 CASE OUTLINE D b Pin #1 ID (Optional) D2 3 4 3 4 E2 E Index Area (D/2 x E/2) 1 2 e Top View Bottom View A3 A1 Side View MILLIMETERS DIM. MIN. NOM. 0.55 0.15 REF 0.25 1.20 0.86 0.50 BSC 1.60 0.50 0.35 MAX. 0.60 0.05 0.30 1.25 0.91 1.65 0.55 0.40 MIN. 0.020 0.00 0.008 0.045 0.032 0.061 0.018 0.008 0.012 A 0.50 A1 0.00 A3 b 0.20 D 1.15 D2 0.81 e E 1.55 E2 0.45 K 0.20 L 0.30 ECN: C10-0043-Rev. A, 08-Feb-10 DWG: 5995 A INCHES NOM. 0.022 0.006 0.010 0.047 0.034 0.020 0.063 0.020 0.014 MAX. 0.024 0.002 0.012 0.049 0.036 0.065 0.022 0.016 Document Number: 65734 Revision: 08-Feb-10 L www.vishay.com 1 2 1 K Package Information Vishay Siliconix SC-70: 3/4/5/6-LEADS (PIC ONLY) D e1 D N5 N4 N3 0.15 (0.006) C A A E/2 E1/2 E/1 E 0.15 (0.006) C Pin 1 N1 e N2 B See Detail A C 0.10 (0.004) M C A B b U1 A2 A SEATING PLANE A1 C 0.10 (0.004) C (b) b1 0.15 (0.0059) H GAGE PLANE c1 Base Metal SECTIION A-A c L DETAIL A U Pin Code N1 N2 N3 N4 N5 LEAD COUNT 3 − 2 − 3 − NOTES: 4 − 2 3 − 4 5 2 3 4 − 5 6 2 3 4 5 6 1. 2. 3. Dimensioning and tolerancing per ANSI Y14.5M-1994. Controlling dimensions: millimeters converted to inch dimensions are not necessarily exact. Dimension “D” does not include mold flash, protrusion or gate burr. Mold flash, protrusion or gate burr shall not exceed 0.15 mm (0.006 inch) per side. The package top shall be smaller than the package bottom. Dimension “D” and “E1” are determined at the outer most extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. Document Number: 73201 19-Nov-04 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS Dim A A1 A2 b b1 c c1 D E E1 e e1 L U U1 0.26 0_ 4_ INCHES Min 0.031 0.000 0.031 0.006 0.006 0.003 0.003 0.074 0.078 0.045 Min 0.80 0.00 0.80 0.15 0.15 0.08 0.08 1.90 2.00 1.15 Nom − − 0.90 − 0.20 − 0.13 2.10 2.10 1.25 0.65 BSC 1.30 BSC 0.36 − Max 1.10 0.10 1.00 0.30 0.25 0.25 0.20 2.15 2.20 1.35 Nom − − 0.035 − 0.008 − 0.005 0.082 0.082 0.050 0.0255 BSC 0.0512 BSC Max 0.043 0.004 0.040 0.012 0.010 0.010 0.008 0.084 0.086 0.055 0.46 8_ 10_ 0.010 0_ 4_ 0.014 − 0.018 8_ 10_ ECN: S-42145—Rev. A, 22-Nov-04 DWG: 5941 www.vishay.com 2 Document Number: 73201 19-Nov-04 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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