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W24L11Q-70L

W24L11Q-70L

  • 厂商:

    WINBOND(华邦)

  • 封装:

  • 描述:

    W24L11Q-70L - 128K X 8 High Speed CMOS Static RAM - Winbond

  • 数据手册
  • 价格&库存
W24L11Q-70L 数据手册
Preliminary W24L11 128K × 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24L11 is a normal-speed, very low-power CMOS static RAM organized as 131072 × 8 bits that operates on a wide voltage range from 3.0V to 3.6V power supply. This device is manufactured using Winbond's high performance CMOS technology. FEATURES • • • • • Low power consumption: − Active: 144 mW (max.) Access time: 70 nS Single 3.3V power supply Fully static operation All inputs and outputs directly TTL compatible • • • • Three-state outputs Battery back-up operation capability Data retention voltage: 2V (min.) Packaged in 600 mil DIP, 450 mil SOP, standard type one, TSOP (8 mm × 20 mm) , small type one and TSOP (8 mm × 13.4 mm) PIN CONFIGURATIONS BLOCK DIAGRAM PRECHARGE CKT. A16 A14 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A4 A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 WE CS1 OE A13 A1 A0 A10 A9 I/O1 : A7 A6 A3 PIN DESCRIPTION 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 WE CS2 A15 VDD NC A16 A14 A12 A7 A6 A5 A4 1 I/O8 SYMBOL A0−A16 I/O1−I/O8 CS1, CS2 WE OE VDD VSS NC DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Input Write Enable Input Output Enable Input Power Supply Ground No Connection 32-pin VSS -1- Publication Release Date: October 1999 Revision A1 Preliminary W24L11 TRUTH TABLE CS1 H X L L L CS2 X L H H H OE X X H L X WE X X H H L MODE Not Selected Not Selected Output Disable Read Write I/O1− I/O8 High Z High Z High Z Data Out Data In VDD CURRENT ISB, ISB1 ISB, ISB1 IDD IDD IDD DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Supply Voltage to VSS Potential Input/Output to VSS Potential Allowable Power Dissipation Storage Temperature Operating Temperature RATING -0.5 to +4.6 -0.5 to VDD +0.5 1.0 -65 to +150 0 to 70 UNIT V V W °C °C Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. Operating Characteristics (VDD = 3.0V to 3.6V; VSS = 0V; TA (°C) = 0 to 70) PARAMETER Input Low Voltage Input High Voltage Input Leakage Current Output Leakage Current SYM. VIL VIH ILI ILO TEST CONDITIONS VIN = VSS to VDD VI/O = VSS to VDD, CS1 = VIH (min.) or CS2 = VIL (max.) or OE = VIH (min.) or WE = VIL (max.) IOL = +2.1 mA IOH = -1.0 mA CS1 = VIL (max.) and CS2 = VIH (min.), I/O = 0 mA, Cycle = min. Duty = 100% MIN. -0.5 +2.0 -1 -1 MAX. +0.6 VDD +0.5 +1 +1 UNIT V V µA µA Output Low Voltage Output High Voltage Operating Power Supply Current VOL VOH IDD 2.2 - 0.4 40 V V mA -2- Preliminary W24L11 Operating Characteristics, continued PARAMETER Standby Power Supply Current SYM. ISB TEST CONDITIONS MIN. - MAX. 1 UNIT mA CS1 = VIH (min.) or CS2 = VIL (max.) Cycle = min. Duty = 100% CS1 ≥ VDD -0.2V or CS2 ≤ 0.2V LL L ISB1 - 50 100 µA Note: Typical parameter is measured under ambient temperature TA = 25° C and VDD = 3.3V CAPACITANCE (VDD = 3.3 V, TA = 25° C, f = 1 MHz) PARAMETER Input Capacitance Input/Output Capacitance SYM. CIN CI/O CONDITIONS VIN = 0V VOUT = 0V MAX. 6 8 UNIT pF pF Note: These parameters are sampled but not 100% tested. AC characteristics AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load 0V to 3.0V 5 nS 1.5V See the drawing below CONDITIONS AC Test Loads and Waveform 1 TTL OUTPUT 100 pF Including Jig and Scope OUTPUT 5 pF Including Jig and Scope (For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW ) 3.0 V 0V 5 nS 90% 90% 10% 10% 1 TTL 5 nS -3- Publication Release Date: October 1999 Revision A1 Preliminary W24L11 AC Characteristics, continued (VDD = 3.0V to 3.6 V; VSS = 0V; TA (°C) = 0 to 70) Read Cycle PARAMETER SYMBOL W24L11-70L/LL MIN. Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to Output in High Z Output Disable to Output in High Z Output Hold from Address Change ∗ These parameters are sampled but not 100% tested UNIT MAX. 70 70 35 30 30 nS nS nS nS nS nS nS nS nS TRC TAA TACS TAOE TCLZ* TOLZ* TCHZ* TOHZ* TOH 70 10 5 10 Write Cycle PARAMETER SYMBOL W24L11-70L/LL MIN. Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Data Valid to End of Write Data Hold from End of Write Write to Output in High Z Output Disable to Output in High Z Output Active from End of Write ∗ These parameters are sampled but not 100% tested CS1 , CS2, WE UNIT MAX. 25 25 nS nS nS nS nS nS nS nS nS nS nS TWC TCW TAW TAS TWP TWR TDW TDH TWHZ* TOHZ* TOW 70 55 55 0 50 0 45 0 5 -4- Preliminary W24L11 TIMING WAVEFORMS Read Cycle 1 (Address Controlled) TRC Address TOH DOUT TAA TOH Read Cycle 2 (Chip Select Controlled) CS1 CS2 TACS TCLZ D OUT TCHZ Read Cycle 3 (Output Enable Controlled) T RC Address TAA OE TAOE TOLZ CS1 TOH CS2 TACS DOUT TCLZ TCHZ TOHZ -5- Publication Release Date: October 1999 Revision A1 Preliminary W24L11 Timing Waveforms, continued Write Cycle 1 TWC Address TWR OE TCW CS1 CS2 TAW WE TAS TOHZ DOUT TDW DIN TDH (1, 4) T WP Write Cycle 2 ( OE = VIL Fixed) T WC Address TCW CS1 TWR CS2 TAW WE TAS T WP TWHZ (1, 4) TOH (2) TOW (3) D OUT TDW DIN TDH Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from DOUT are the same as the data written to DIN during the write cycle. 3. DOUT provides the read data for the next address. 4. Transition is measured ±500 mV from steady state with CL = 5 pF. This parameter is guaranteed but not 100% tested. -6- Preliminary W24L11 DATA RETENTION CHARACTERISTICS (TA (°C) = 0 to 70) PARAMETER VDD for Data Retention SYM. VDR TEST CONDITIONS CS1 ≥ VDD -0.2V or CS2 ≤ 0.2V CS1 ≥ VDD -0.2V or CS2 ≤ 0.2V, VDD = 3V See data retention waveform MIN. 2.0 TYP. - MAX. - UNIT V Data Retention Current IDDDR - - 50 µA Chip Deselect to Data Retention Time Operation Recovery Time * Read Cycle Time TCDR TR 0 TRC* - - nS nS DATA RETENTION WAVEFORM VDD 0.9VDD TCDR VDR > 2V = 0.9 VDD TR CS1 CS1 > VDD - 0.2V = CS2 0V < CS2 < 0.2V = = -7- Publication Release Date: October 1999 Revision A1 Preliminary W24L11 ORDERING INFORMATION PART NO. ACCESS TIME (nS) 70 70 70 70 70 70 70 70 OPERATING VOLTAGE (V) 3.0V to 3.6V 3.0V to 3.6V 3.0V to 3.6V 3.0V to 3.6V 3.0V to 3.6V 3.0V to 3.6V 3.0V to 3.6V 3.0V to 3.6V OPERATING TEMPERATURE (° C) 0 to 70 0 to 70 0 to 70 0 to 70 0 to 70 0 to 70 0 to 70 0 to 70 STANDBY CURRENT MAX.(µ A) 50 50 50 50 100 100 100 100 PACKAGE W24L11-70LL W24L11S-70LL W24L11T-70LL W24L11Q-70LL W24L11-70L W24L11S-70L W24L11T-70L W24L11Q-70L Notes: 600 mil DIP 450 mil SOP Standard type one TSOP Small type one TSOP 600 mil DIP 450 mil SOP Standard type one TSOP Small type one TSOP 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. -8- Preliminary W24L11 PACKAGE DIMENSIONS 32-pin P-DIP Dimension in inches Dimension in mm Symbol Min. Nom. Max. Min. Nom. Max. 0.210 0.010 0.150 0.016 0.048 0.008 0.155 0.018 0.050 0.010 1.650 0.590 0.545 0.090 0.120 0 0.630 0.650 0.600 0.550 0.100 0.130 0.160 0.022 0.054 0.014 1.660 0.610 0.555 0.110 0.140 15 0.670 0.085 14.99 13.84 2.29 3.05 0 16.00 16.51 0.25 3.81 0.41 1.22 0.20 3.94 0.46 1.27 0.25 41.91 15.24 13.97 2.54 3.30 4.06 0.56 1.37 0.36 42.16 15.49 14.10 2.79 3.56 15 17.02 2.16 5.33 D 32 17 E1 A A1 A2 B B1 c D E E1 e1 L a 1 16 eA S Notes: E c S A A2 A1 Base Plane Seating Plane L B B1 e1 a eA 1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension E1 does not include interlead flash. 3. Dimensions D & E1 include mold mismatch and are determined at the mold parting line. 4. Dimension B1 does not include dambar protrusion/intrusion. 5. Controlling dimension: Inches 6. General appearance spec. should be based on final visual inspection spec. 32-pin SOP Wide Body Dimension in Inches Dimension in mm Symbol 17 Min. 32 Nom. Max. 0.118 Min. 0.10 Nom. Max. 3.00 e1 E HE θ L Detail F 1 b 16 A A1 A2 b c D E e HE L LE S y 0.004 0.101 0.014 0.006 0.106 0.016 0.008 0.805 0.440 0.044 0.546 0.023 0.047 0.445 0.050 0.556 0.031 0.055 0.111 0.020 0.012 0.817 0.450 0.056 0.556 0.039 0.063 0.036 0.004 0 10 2.57 0.36 0.15 2.69 0.41 0.20 20.45 2.82 0.51 0.31 20.75 11.43 1.42 14.38 0.99 1.60 0.91 0.10 11.18 1.12 13.87 0.58 1.19 11.30 1.27 14.12 0.79 1.40 θ Notes: D e1 c A2 S y e A1 LE A 0 10 1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion/intrusion. 3. Dimensions D & E include mold mismatch . and determined at the mold parting line. 4. Controlling dimension: Inches 5. General appearance spec should be based on final visual inspection spec. See Detail F Seating Plane -9- Publication Release Date: October 1999 Revision A1 Preliminary W24L11 Package Dimensions, continued 32-pin Standard Type One TSOP HD Symbol Dimension in Inches Min. Nom. Max. 0.047 0.002 0.037 0.007 Dimension in mm Min. Nom. Max. 1.20 0.15 1.05 0.23 0.17 18.50 8.10 20.20 D c 1 A A1 A2 b __ __ __ 0.039 0.008 0.006 0.041 0.009 0.007 __ 0.05 0.95 0.17 0.12 __ __ 1.00 0.20 0.15 M e E c D E HD e L L1 0.005 0.006 0.720 0.724 0.311 0.780 0.315 0.10(0.004) 0.728 18.30 18.40 0.319 7.90 8.00 b 0.787 0.795 19.80 20.00 0.020 0.020 0.031 __ 0.016 __ 0.024 __ 0.50 0.40 0.50 0.80 __ 0.60 __ 0.000 1 __ 0.004 5 __ 0.00 1 __ 0.10 5 A A2 θ L L1 A1 Y Y __ 3 __ 3 θ Controlling dimension: Millimeters 32-pin Small Type One TSOP HD Symbol Dimension in Inches Min. Nom. Max. 0.049 0.002 Dimension in mm Min. Nom. Max. 1.25 0.15 1.00 0.20 0.15 1.05 0.27 0.16 D c 1 A A1 A2 b c D E HD e L L1 0.006 0.05 0.95 e E 0.037 0.039 0.041 0.007 0.008 0.009 0.17 0.0056 0.0059 0.0062 0.14 b 0.461 0.465 0.469 11.70 11.80 11.90 0.311 0.315 0.319 7.90 8.00 8.10 0.520 0.528 0.536 13.20 13.40 13.60 0.020 0.012 0.020 0.028 0.027 0.000 0 3 0.004 5 0.50 0.30 0.50 0.675 0.00 0 3 0.10 5 0.70 θ A A 2 L L1 A1 Y Y θ Controlling dimension: Millimeters - 10 - Preliminary W24L11 VERSION HISTORY VERSION A1 DATE Oct. 1999 PAGE Initial Issued DESCRIPTION Headquarters Winbond Electronics (H.K.) Ltd. Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change without notice. - 11 - Publication Release Date: October 1999 Revision A1
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