MMBT5551

MMBT5551 TRANSISTOR(NPN) FEATURES z Complementary to MMBT5401 z Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA Characteristics at Ta = 25 OC Parameter Collector-base breakdown voltage Symbol Test V(BR)CBO IC=100µA, IE=0 180 V IC=1mA, IB=0 160 V IE=10µA, IC=0 6 V * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Min Typ Max Unit VCB=120V, IE=0 50 nA VEB=4V, IC=0 50 nA hFE(1) * VCE=5V, IC=1mA 80 hFE(2) * VCE=5V, IC=10mA 100 hFE(3) * VCE=5V, IC=50mA 50 300 VCE(sat)1 * IC=10mA, IB=1mA 0.15 V VCE(sat)2 * IC=50mA, IB=5mA 0.2 V VBE(sat)1 * IC=10mA, IB=1mA 1 V VBE(sat)2 * IC=50mA, IB=5mA fT Transition frequency Collector output capacitance conditions Cob VCE=10V,IC=10mA, f=100MHz 100 VCB=10V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE (2) RANK L H RANGE 100-200 200-300 1 V 300 MHz 6 pF MMBT5551 Static Characteristic 18 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 80uA 70uA 12 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 90uA 15 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 10 (V) COLLECTOR CURRENT IC VCEsat —— 0.3 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 200 100 200 IC 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C (pF) IC (mA) 100 100 (mA) β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=100℃ IB=20uA 3 0 COLLECTOR CURRENT IC hFE —— 500 Ta=100℃ Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 10 Cob 1 0.1 1.0 VBE(V) Ta=25℃ Cib 1 10 REVERSE VOLTAGE IC PC 0.4 150 —— V 20 (V) Ta Ta=25℃ COLLECTOR POWER DISSIPATION PC (W) TRANSITION FREQUENCY fT (MHz) VCE=10V 100 50 0.3 0.2 0.1 0.0 1 10 3 COLLECTOR CURRENT IC (mA) 20 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150