SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High DC current amplifier rate
hFE: 50-200@VCE= 5V,IC= 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High power audio, disk head positioners and other linear
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Pulse
30
A
IB
Base Current-Continuous
1.5
A
PC
Total Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
150
℃
-65~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.63
℃/W
SPTECH website:www.superic-tech.com
1
MJW0281A
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
MJW0281A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=100mA ; IB=0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
2
V
VBE(on)
Base-Emitter Saturation Voltage
IC= 8A; VCE= 5V
2
V
ICBO
Collector Cutoff Current
VCB= 250V ; IE=0
50
µA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5
µA
hFE-1
DC Current Gain
IC= 100mA ; VCE= 5V
75
150
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
75
150
hFE-3
DC Current Gain
IC= 8A ; VCE= 5V
75
hFE-4
DC Current Gain
IC= 15A ; VCE= 5V
12
SPTECH website:www.superic-tech.com
2
MIN
MAX
250
UNIT
V
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