WSD80100DN56

WSD80100DN56 N-Ch MOSFET General Description Product Summery The WSD80100DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 80V 6.1mΩ 100A Applications The WSD80100DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z DC-DC converter switching for Networkong z General purpose switching DFN5X6-8 Pin Configuration Features z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V TJ ID Maximum Junction Temperature 150 °C -55 to 150 °C Continuous Drain Current, VGS=10V,TC=25°C 100 A Continuous Drain Current, VGS=10V,TC=100°C 80 A Pulsed Drain Current ,TC=25°C 380 A Maximum Power Dissipation,TC=25°C ID IDM PD RqJC EAS www.winsok.tw Storage Temperature Range 200 W Thermal Resistance-Junction to Case 0.8 °C Avalanche Energy, Single pulse,L=0.5mH 800 mJ Page 1 Rev1.0. Jun.2019 WSD80100DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Drain-Source Breakdown Voltage Max. Unit 80 --- --- V Reference to 25℃ , ID=1mA --- 0.043 --- V/℃ VGS=10V , ID=40A --- 6.1 8.5 mΩ 2.0 3.0 4.0 V mV/℃ VGS=0V , ID 250uA = 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Typ. Conditions △BVDSS/△TJ BVDSS Temperature Coefficient △VGS(th) Min. Parameter --- -6.94 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 2 VDS=48V , VGS=0V , TJ=55℃ --- --- 10 VGS=±20V , VDS=0V --- --- ±100 nA 80 --- --- S --- 125 --- --- 24 --- --- 30 --- = VDS=5V , ID 20A VDS=30V , VGS=10V , ID=30A --- 20 --- Rise Time VDD=30V , VGS=10V , --- 19 --- Turn-Off Delay Time RG=2.5Ω, ID=2A ,RL=15Ω. --- 70 --- Fall Time --- 30 --- Ciss Input Capacitance --- 4900 --- Coss Output Capacitance --- 410 --- Crss Reverse Transfer Capacitance --- 315 --- Min. Typ. Max. Tr Td(off) Tf Turn-On Delay Time VDS=25V , VGS=0V , f=1MHz uA nC ns pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=40A , TJ=25℃ Unit --- --- 105 A --- --- 400 A --- --- 1.4 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω www.winsok.tw Page 2 Rev1.0. Jun.2019 WSD80100DN56 N-Ch MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Vgs Gate-Source Voltage (V) Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Figure 2 Transfer Characteristics ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.winsok.tw Figure 6 Source- Drain Diode Forward Page 3 Rev1.0. Jun.2019 WSD80100DN56 Normalized BVdss C Capacitance (pF) N-Ch MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Rev1.0. Jun.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.