WSD3023DN56

WSD3023DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3023DN56 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 30V 14mΩ 14A -30V 23mΩ -12A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z CCFL Back-light Inverter z Advanced high cell density Trench technology DFN5X6C-8-EP2 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID a IDP EAS c IAS c Continuous Drain Current, VGS(NP)=10V,Ta=25℃ 14* -12 A Continuous Drain Current, VGS(NP)=10V,Ta=70℃ 7.6 -9.7 A Pulse Drain Current Tested, VGS(NP)=10V Avalanche Energy, Single pulse , 48 -48 A L=0.5mH 20 20 mJ Avalanche Current, Single pulse , L=0.5mH 9 -9 A 5.25 5.25 W -55 to 175 -55 to 175 ℃ 175 175 ℃ 60 60 ℃/W 6.25 6.25 ℃/W PD Total Power Dissipation, Ta=25℃ TSTG Storage Temperature Range TJ RqJA RqJC Operating Junction Temperature Range b Thermal Resistance-Junction to Ambient,Steady State Thermal Resistance-Junction to Case,Steady State Note *：Max. current is limited by bonding wire. Note a：Pulse width limited by max. junction temperature. 2 Note b：RqJA steady state t=999s. RθJA is measured with the device mounted on 1in , FR-4 board with 2oz. Copper. o o Note c：UIS tested and pulse width limited by maximum junction temperature 175 C (initial temperature Tj=25 C). www.winsok.tw Page 1 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage RDS(ON)d Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. VGS=0V , ID=250uA 30 VGS=10V , ID=8A --- --14 --18.5 VGS=4.5V , ID=5A --- 17 25 VGS=VDS , ID =250uA 1.3 1.8 2.3 VDS=20V , VGS=0V , TJ=25℃ --- --- 1 VDS=20V , VGS=0V , TJ=85℃ --- --- 30 Unit V mΩ V uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω --- 5.2 --- --- 1.0 --- --- 2.8 --- --- 6 --- --- 8.6 --- --- 16 --- Fall Time --- 3.6 --- Input Capacitance --- 545 --- --- 95 --- --- 55 --- Min. Typ. Unit V Rg Qg e Total Gate Charge Qgse Gate-Source Charge Qgde Gate-Drain Charge Td(on)e Tre Rise Time Td(off) e Tfe Cisse Coss Turn-On Delay Time e Crsse Turn-Off Delay Time Output Capacitance VDS =15V, V GS=4.5V, I D S =8A VDD =15V,RL=15R, ID S =1A,VGEN=10V, R G =6R. VDS=15V , VGS=0V , f=1MHz Reverse Transfer Capacitance nC ns pF Diode Characteristics Symbol IS VSD d Parameter Conditions Continuous Source Current VG=VD=0V , Force Current --- --- Max. 12 Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 A Note d：Pulse test ; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON)d Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Qg e Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-12A --- 23 32.5 VGS=-4.5V , ID=-5A --- 32 42 -1.3 -1.8 -2.3 VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 VDS=-20V , VGS=0V , TJ=85℃ --- --- -30 VGS=±20V , VDS=0V --- --- ±100 --- 13 --- --- 1.0 --- VGS=VDS , ID =-250uA Total Gate Charge Qgse Gate-Source Charge Qgde Gate-Drain Charge --- 4.0 --- Turn-On Delay Time --- 8.7 --- Td(on) e e Tr Td(off) e Tfe VDS=-15V , VGS=-4.5V , ID=-12A Rise Time VDD=-15V , VGS=-10V , RG=6Ω, --- 10 --- Turn-Off Delay Time ID=-1A ,RL=15Ω, --- 22 --- --- 9.0 --- --- 580 --- --- 105 --- --- 72 --- Fall Time Cisse Input Capacitance Cosse Output Capacitance Crsse Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz mΩ V uA nA nC ns pF Diode Characteristics Symbol IS VSD e Parameter Conditions Min. Typ. Max. Unit Continuous Source Current VG=VD=0V , Force Current --- --- -10 A Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note d：Pulse test; pulse width£300ms, duty cycle£2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 3 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Drain Current 28 16 24 14 20 12 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 16 12 8 8 6 4 4 2 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 Tj - Junction Temperature (°C) 1ms 10ms 100ms 1 1s DC 0.1 0.1 1 10 100 2 Normalized Transient Thermal Resistance im it )L Rd s( on ID - Drain Current (A) 300ms o 1 Duty = 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 0.01 1E-4 Mounted on 1in pad o RqJA :20 C/W 1E-3 0.01 0.1 1 10 60 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) www.winsok.tw 80 100 120 140 160 180 Thermal Transient Impedance 100 TC=25 C 60 Tj - Junction Temperature (°C) Safe Operation Area 10 40 Page 4 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Drain-Source On Resistance Output Characteristics 50 30 VGS=5,6,7,8,9,10V 4V RDS(ON) - On - Resistance (mW) ID - Drain Current (A) 40 30 3.5V 20 3V 10 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 25 VGS=10V 15 10 5 3.0 VGS=4.5V 20 0 10 20 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 50 1.6 IDS =250mA IDS=8A 50 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) 40 VDS - Drain - Source Voltage (V) 60 40 30 20 10 0 30 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.winsok.tw 1.4 Page 5 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET N-Channel Typical Characteristics Drain-Source On Resistance 2.5 Source-Drain Diode Forward 50 VGS = 10V 2.0 10 IS - Source Current (A) Normalized On Resistance IDS = 8A 1.5 1.0 0.5 o Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 14mW 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 175 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 1.4 10 Frequency=1MHz 720 9 560 VGS - Gate-source Voltage (V) 640 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 800 Ciss 480 400 320 240 160 Coss Crss 80 0 0.2 0 5 10 15 IDS=8A 8 7 6 5 4 3 2 1 20 25 0 0 30 2 4 6 8 10 12 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw VDS=15V Page 6 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics Drain Current 14 24 12 20 10 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 28 16 12 8 4 8 6 4 2 o 0 o TC=25 C 0 0 20 40 60 80 100 120 140 160 180 TC=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 300ms 1ms 10ms 100ms 1 1s DC o TC=25 C 0.1 0.1 1 10 Normalized Transient Thermal Resistance 2 Rd s( on )L im it ID - Drain Current (A) 100 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 0.01 1E-4 100 VDS - Drain - Source Voltage (V) www.winsok.tw 1 Mounted on 1in pad o RqJA : 20 C/W 1E-3 0.01 0.1 1 10 60 Square Wave Pulse Duration (sec) Page 7 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics Drain-Source On Resistance Output Characteristics 50 RDS(ON) - On - Resistance (mW) -5V 40 ID - Drain Current (A) 100 VGS=-6,-7,-8,-9,-10V -4.5V 30 -4V 20 -3.5V 10 0 -3V -2.5V 0 1 2 3 4 80 VGS=-4.5V 60 20 0 5 VGS=-10V 40 0 10 20 40 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 80 50 1.8 IDS=-12A IDS = -250mA 1.6 70 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) 30 60 50 40 30 1.4 1.2 1.0 0.8 0.6 0.4 0.2 20 2 3 4 5 6 7 8 9 0.0 -50 -25 10 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) www.winsok.tw 0 Page 8 Rev 2: Apr.2019 WSD3023DN56 N-Ch and P-Channel MOSFET P-Channel Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 50 1.8 VGS = -10V IDS = -12A 10 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 o 0.4 -50 -25 RON@Tj=25 C: 29mW 0 0.1 0.0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 0.3 0.6 Capacitance Gate Charge VDS=-15V 9 I =-12A DS 700 8 VGS - Gate-source Voltage (V) C - Capacitance (pF) Frequency=1MHz Ciss 500 400 300 200 0 0 Coss 7 6 5 4 3 2 1 5 10 15 20 25 0 0 30 2 4 6 8 10 12 14 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) www.winsok.tw 1.5 10 800 100 Crss 1.2 -VSD - Source - Drain Voltage (V) 900 600 0.9 Page 9 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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