WSF18N15

WSF18N15 N-Ch MOSFET General Description Product Summery The WSF18N15 is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 150V RDSON ID 95mΩ 17A Applications The WSF18N15 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High-Frequency Switch z Load Switch z Motion Switch Features TO-252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS Rating Units Drain-Source Voltage 150 V Gate-Source Voltage ±20 V 1 17 A 1 12 A 1 3.0 A 1 2.5 A 40 A Single Pulse Avalanche Energy 53 mJ A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 IAS Avalanche Current 18 PD@TC=25℃ Total Power Dissipation3 72.6 W PD@TA=25℃ Total Power Dissipation3 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 60 ℃/W --- 1.72 ℃/W Rev 1: May.2019 WSF18N15 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit 150 --- --- V --- 0.098 --- V/℃ --- 95 105 mΩ --- 105 115 mΩ 1.2 --- 2.5 V --- -4.57 --- mV/℃ VDS=120V , VGS=0V , TJ=25℃ --- --- 1 VDS=120V , VGS=0V , TJ=55℃ --- --- 5 VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=10A VGS=4.5V , ID=10A VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 33 --- S Qg Total Gate Charge (10V) --- 25.1 --- Qgs Gate-Source Charge --- 6.8 --- Qgd Td(on) VDS=75V , VGS=4.5V , ID=10A Gate-Drain Charge --- 12.6 --- Turn-On Delay Time --- 13 --- uA nC Rise Time VDD=25V , VGS=10V , --- 8.2 --- Turn-Off Delay Time RG=3.3Ω ID=10A. --- 25 --- Fall Time --- 11 --- Ciss Input Capacitance --- 2285 --- Coss Output Capacitance --- 110 --- Crss Reverse Transfer Capacitance --- 83 --- Min. Typ. Max. Unit 15 --- --- mJ Min. Typ. Unit --- --- Max. 17 --- --- 40 A --- --- 1.3 V --- 37 --- nS --- 263 --- nC Tr Td(off) Tf VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions Single Pulse Avalanche Energy5 VDD=25V , L=0.5mH , IAS=6A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Conditions 1,6 Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , dI/dt=100A/µs , TJ=25℃ A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.3mH,IAS=18A 4.The power dissipation is limited by 150℃ junction temperature 5 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 1: May.2019 WSF18N15 N-Ch MOSFET Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 VSD , Source-to-Drain Voltage (V) 1.00 Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) (V) 1.4 1.5 1 0.6 1.0 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 0.5 -50 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 TJ , Junction Temperature (℃) Page 3 Rev 1: May.2019 WSF18N15 N-Ch MOSFET Fig.7 Capacitance Fig.8 Safe Operating Area Normaliz ed Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 10% VGS Td(on) Tr Ton Td(off) BVDSS BVDSS-VDD VDS IAS Tf Toff Fig.10 Switching Time Waveform www.winsok.tw BVDSS 1 L x IAS2 x 2 VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev 1: May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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