WSF15N10G

WSF15N10G N-Ch MOSFET Product Summery General Description The WSF15N10G uses advanced SGTMOS technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous rectification applications BVDSS RDSON ID 100V 75mΩ 15A Applications z Fast Switching z DC-DC Power System z Load Switch Features TO-252 Pin Configuration z advanced SGTMOS technology z Low gate charge z Low RDS(ON) Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V 15 A 45 A 5.5 mJ 36 W ID ID, pulse EAS Continuous Drain Current1) 2) Pulsed Drain Current 4) Single Pulse Avalanche Energy 3) PD Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case www.winsok.tw Page 1 5) Typ. Max. Unit --- 62 ℃/W --- 3.5 ℃/W Rev 2: Apr.2019 WSF15N10G N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=5A --- 50 75 mΩ VGS=4.5V , ID=2A --- 60 90 mΩ VGS=VDS , ID =250uA 1.2 --- 2.5 VGS=0V , ID=250uA V VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 28.8 --- Ω Qg Total Gate Charge (10V) VGS=10 V , --- 6.5 --- Qgs Gate-Source Charge VDS=50 V, --- 1.4 --- Qgd Gate-Drain Charge ID=5 A --- 1.4 --- Turn-On Delay Time VGS=10 V, --- 14 --- Rise Time VDS=50 V, --- 3.2 --- Turn-Off Delay Time RG=2 Ω, --- 36 --- Fall Time ID=5 A --- 14 --- Ciss Input Capacitance VGS=0 V, --- 310 --- Coss Output Capacitance VDS=25 V, --- 80 --- Crss Reverse Transfer Capacitance ƒ=100 KHz --- 50 --- Min. Typ. Max. Unit --- --- 15 A --- --- 45 A IDSS Drain-Source Leakage Current IGSS Td(on) Tr Td(off) Tf uA nC ns pF Diode Characteristics Symbol IS ISP Parameter Continuous diode current1) Pulsed diode current2) 2) Conditions VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=5A , TJ=25℃ --- --- 1.3 V trr Reverse Recovery Time --- 36 --- nS Qrr Reverse Recovery Charge IF=5A , dI/dt=100A/µs , TJ=25℃ --- 37 --- nC 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 °C. 5) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. www.winsok.tw Page 2 Rev 2: Apr.2019 WSF15N10G N-Ch MOSFET Typical Characteristics 100 56 Tj = 25 ℃ 10 V VDS= 10 V 6V Tj = 25 ℃ 5.5 V 40 ID, Drain current(A) ID, Drain current (A) 48 10 5V 32 4.5 V 24 4V 1 16 3.5 V 8 VGS= 3V 0.1 0 0 2 4 6 8 VDS, Drain-source voltage (V) 0 10 4 6 8 10 VGS, Gate-source voltage(V) Figure 1, Typ. output characteristics 10 2 Figure 2, Typ. transfer characteristics 3 10.0 ID = 5 A VDS = 50 V VGS, Gate-source voltage(V) Ciss C, Capacitance (pF) 7.5 10 2 Coss 10 5.0 1 2.5 f =100 KHz VGS = 0 V 10 Crss 0.0 0 0 20 40 60 80 0 100 1 VDS, Drain-source voltage (V) BVDSS, Drain-source breakdown voltage (V) 5 6 7 100m ID = 250 μA ID = 5 A RDS(ON), On-resistance(Ω) VGS = 0 V 110 105 VGS = 10 V 75m 50m 25m -50 0 50 100 -50 150 0 50 100 150 Tj, Junction Temperature (℃) Tj, Junction temperature (℃) Figure 5, Drain-source breakdown voltage www.winsok.tw 4 Figure 4, Typ. gate charge 120 100 3 Qg, Gate charge(nC) Figure 3, Typ. capacitances 115 2 Figure 6, Drain-source on-state resistance Page 3 Rev 2: Apr.2019 WSF15N10G N-Ch MOSFET 100 ID = 250 μA 2.2 IS, Source current (A) Vth, Threshold voltage (V) 2.4 2.0 Tj = 25 ℃ 10 1.8 1.6 1 1.4 1.2 -50 0 50 100 0.1 150 0.0 0.4 Tj, Junction Temperature (℃) Figure 7, Threshold voltage 2.0 15 4V VGS=3.5 V 5V 4.5 V 5.5 V ID, Drain current (A) RDS(ON), On-resistance(Ω) 1.6 18 400m 10 V 200m 100m 12 9 6 3 0 8 16 24 32 40 48 0 56 0 20 40 ID, Drain current(A) 60 80 100 120 140 TC, Case Temperature (℃) Figure 9, Drain-source on-state resistance Figure 10, Drain current 10 10 μs 10 100 μs 1 1 ms 10 ms RDS(ON) Limited DC 0.1 0.01 0.01 0.1 1 10 100 zthjc Thermal Response(K/W) 100 ID, Drain current(A) 1.2 Figure 8, Forward characteristic of body diode 500m 300m 0.8 VSD, Source-Drain voltage (V) D= tp/T D= 1 0.5 1 0.1 0.05 0.1 0.01 10-5 www.winsok.tw 0.02 0.01 Single Pulse 10-4 10-3 10-2 10-1 100 tp Pulse width(s) VDS, Drain-source voltage(V) Figure 11, Safe operation area TC=25 ℃ 0.2 Figure 12, Max. transient thermal impedance Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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