S9015

S9015 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9014 1．BASE 2．EMITTER 3．COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA DC current gain hFE VCE=-5V, IC= -1mA 200 450 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Transition frequency Page 1 of 3 fT VCE=-5V, f=30MHz IC= -10mA 150 MHz 5/30/2011 Typical Characteristics Page 2 of 3 S9015 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011