山东晶导微电子股份有限公司
MMBT5551
Jingdao Microelectronics co.LTD
SOT-23
MMBT5551
NPN TRANSISTOR
3
FEATURES
• Complementary to MMBT5401
• Ideal for Medium Power Amplification and Switching
1
MAXIMUM RATINGS (Ta=25℃ unless other wise noted)
Parameter
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Operation Junction and Storage
Temperature Range
Symbol
Value
Unit
V CBO
V CEO
V EBO
IC
PC
180
160
6
600
300
V
V
V
mA
mW
R thJA
416
℃/W
T J ,T stg
-55~+150
℃
2
1.BASE
2.EMITTER
3.COLLECTOR
CLASSIFICATION OF h FE
Rank
L
H
Range
100-200
200-300
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V (BR)CBO I C = 100uA, I E = 0
180
V
Collector-emitter breakdown voltage
V (BR)CEO
I C = 1 mA, I B = 0
160
V
Emitter-base breakdown voltage
V (BR)EBO
I E = 10uA, I C = 0
6
V
Collector cut-off current
I CBO
V CB = 120V, I E = 0
50
nA
Emitter cut-off current
I EBO
V EB = 4V, I C =0
50
nA
h FE1
V CE = 5V, I C =1mA
h FE2
V CE = 5V, I C = 10mA
100
h FE3
V CE = 5V, I C = 50mA
50
V CE(sat)1
I C = 10mA, I B = 1mA
0.15
V
V CE(sat)2
I C = 50mA, I B = 5mA
0.2
V
V BE(sat)1
I C = 10mA, I B = 1mA
1
V
V BE(sat)2
I C = 50mA, I B = 5mA
1
V
300
MH Z
6
pF
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
2020.10
fT
C ob
V CE = 10V, I C = 10mA,
f=100MHz
V CB = 10V, I E = 0,
f=1MHz
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80
100
300
Page 1 of 4
山东晶导微电子股份有限公司
MMBT5551
Jingdao Microelectronics co.LTD
TYPICAL CHARACTERICS
I B=90uA
COMMON
EMITTER
T a =25℃
I B=80uA
I B=70uA
12
I B=60uA
I B=50uA
I B=40uA
6
I B=30uA
I B=20uA
0
2
4
6
8
10
12
400
200
0
25
f=1MHz
I E=0/ Ic=0
Ta=25℃
C ib
10
C ob
1
0.1
1
10
20
COLLECTOR-EMITTER SATURATION
VOLTAGE V CEsat (V)
CAPACITANCE C (pF)
Fig.4
C ob / C ib —— V CB / V EB
Fig.3
150
V CEsat —— I C
Τ α =25℃
10
1
β=10
0.1
1
h FE --Ic
10
100
1000
Fig.6
V BEsat —— I C
1.6
BASE-EMITTER SATURATION
VOLTAGE V BEsat (V)
DC CURRENT GAIN h FE
125
I C , COLLECTOR CURRENT (mA)
Τ α =100℃
Τ α =25℃
100
COMMON EMITTER
V CE =5V
10
0.1
1.2
Τ α =25℃
0.8
0.4
β=10
0
10
1
100
1000
Fig.8
TRANSITION FREQUENCY f T (MHz)
1000
100
T a =100℃
T a =25℃
10
1
0.1
0
0.2
0.4
0.6
0.8
1.0
200
300
I C , COLLECTOR CURRENT (mA)
I C —— V BE
Fig.7
100
10
1
I C , COLLECTOR CURRENT (mA)
COLLECTOR CURRENT I C (mA)
100
100
1000
f T ——I C
1000
100
1.2
COMMON EMITTER
V CE =10V T a =25℃
10
1
10
20
30
I C , COLLECTOR CURRENT (mA)
BASE-EMMITER VOLTAGE V BE (V)
2020.10
75
1000
REVERSE BIAS VOLTAGE V (V)
Fig.5
50
AMBIENT TEMPERATURE Ta ( ℃)
COLLECTOR-EMITTER VOLTAGE V CE (V)
100
P C —— T a
Fig.2
COLLECTOR POWER DISSIPATION
Pc (mW)
COLLECTOR CURRENT I C (mA)
Fig.1 Static characteristics
18
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Page 2 of 4
山东晶导微电子股份有限公司
MMBT5551
Jingdao Microelectronics co.LTD
SOT-23 Package Outline Dimensions
e
∠ALL ROUND
A
D
e
M
e
E
C
a
L1
L
HE
SOT-23 mechanical data
UNIT
mm
mil
A
C
D
E
HE
max 1.1 0.15 1.4 3.0
2.6
min 0.9 0.08 1.2 2.8
2.2
e
M
L
L1
a
∠
0.5 1.95 0.55 0.36 0.0
(ref) (ref)
0.3 1.7
0.15
12°
max 43
6
55
118 102
20
77
min 35
3
47
110
12
67
87
22
14 0.0
(ref) (ref)
6
Marking
The recommended mounting pad size
0.8
(0.031)
Type number
Marking code
MMBT5551
G1
0.9
(0.039)
0.95
(0.037)
0.95
(0.037)
2.0
(0.079)
mm
Unit :
(inches)
2020.10
201012
Page 3 of 4
山东晶导微电子股份有限公司
MMBT5551
Jingdao Microelectronics co.LTD
SOT-23 Packing
1.The method of packaging and dimension are shown as below figure. (Dimension in mm)
7 inX8 mm
Cover Tape
3,000 pcs per reel
Carrier Tape
SOT-23
220mm
8 reels per box
24,000 pcs per box
5 boxes per carton
120,000 pcs per carton
105 mm
m
mm
m
210
5m
0m
18
55
180
mm
SOT-23 Embossed Carrier Tape
SOT-23 Tape Leader and Trailer
2020.10
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Page 4 of 4
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