PMST3906,135

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904. 1.2 Features n Collector current: IC ≤ −200 mA n Collector-emitter voltage: VCEO ≤ −40 V n Very small SMD plastic package 1.3 Applications n General amplification and switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −40 V IC collector current - - −200 mA 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 sym013 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 3. Ordering information Table 3. Ordering information Type number PMST3906 Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] PMST3906 *2A [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −6 V IC collector current - −200 mA ICM peak collector current single pulse; tp ≤ 1 ms - −200 mA IBM peak base current single pulse; tp ≤ 1 ms - −100 mA Ptot total power dissipation Tamb ≤ 25 °C - 200 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] Min Typ Max Unit - - 625 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMST3906_5 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 2 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions ICBO collector-base cut-off IE = 0 A; VCB = −30 V current IEBO emitter-base cut-off current IC = 0 A; VEB = −6 V hFE DC current gain VCE = −1 V collector-emitter saturation voltage Max Unit - - −50 nA - - −50 nA 60 - - IC = −1 mA 80 - - IC = −10 mA 100 - 300 IC = −50 mA 60 - - 30 - - IC = −10 mA; IB = −1 mA - - −250 mV IC = −50 mA; IB = −5 mA - - −400 mV IC = −10 mA; IB = −1 mA - - −850 mV IC = −50 mA; IB = −5 mA - - −950 mV IC = −10 mA; IBon = −1 mA; IBoff = 1 mA - - 35 ns - - 35 ns - - 70 ns VBEsat base-emitter saturation voltage td delay time tr rise time ton turn-on time ts storage time - - 225 ns tf fall time - - 75 ns toff turn-off time - - 300 ns Cc collector capacitance IE = ie = 0 A; VCB = −5 V; f = 1 MHz - - 4.5 pF Ce emitter capacitance IC = ic = 0 A; VEB = −500 mV; f = 1 MHz - - 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 - - MHz NF noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz - - 4 dB PMST3906_5 Product data sheet Typ IC = −0.1 mA IC = −100 mA VCEsat Min © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 3 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor mhc459 600 hFE 006aab475 −250 IC (mA) IB (mA) = −1.5 −200 −1.35 (1) −1.20 400 −150 −0.90 −0.75 −0.60 −100 (2) −1.05 −0.45 200 −0.30 (3) 0 −10−1 −1 −50 −10 −102 IC (mA) 0 −103 VCE = −1 V −0.15 0 −2 −4 −6 −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. DC current gain as a function of collector current; typical values mhc461 −1200 VBE (mV) Fig 2. Collector current as a function of collector-emitter voltage; typical values mhc462 −1200 VBEsat (mV) −1000 −1000 (1) (1) −800 (2) −600 −800 (2) −600 (3) (3) −400 −400 −200 −10−1 −1 −10 −102 −103 −200 −10−1 −1 IC (mA) VCE = −1 V −103 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values Fig 4. Base-emitter saturation voltage as a function of collector current; typical values PMST3906_5 Product data sheet −102 IC (mA) (1) Tamb = −55 °C Fig 3. −10 © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 4 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor mhc463 −103 VCEsat (mV) (1) (2) −102 (3) −10 −10−1 −1 −102 −10 IC (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VI = 5 V; t = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω VBB = 1.9 V; VCC = −3 V Oscilloscope: input impedance ZI = 50 Ω Fig 6. Test circuit for switching times PMST3906_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 5 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 9. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm Fig 7. 04-11-04 Package outline SOT323 (SC-70) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMST3906 [1] Package Description SOT323 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 14. PMST3906_5 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 6 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 11. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) Fig 8. sot323_fr Reflow soldering footprint SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 9. Wave soldering footprint SOT323 (SC-70) PMST3906_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 7 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMST3906_5 20090429 Product data sheet - PMST3906_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • Legal texts have been adapted to the new company name where appropriate. Figure 2: updated Figure 5: figure notes order amended Section 10 “Packing information” added Section 11 “Soldering”: added Section 13 “Legal information”: updated PMST3906_4 20040121 Product specification - PMST3906_3 PMST3906_3 19990422 Product specification - PMST3906_CNV_2 PMST3906_CNV_2 19970527 Product specification - - PMST3906_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 8 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMST3906_5 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 05 — 29 April 2009 9 of 10 PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 April 2009 Document identifier: PMST3906_5