MMBT5551

MMBT5551 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 160Volts POWER 300mWatts FEATURES NPN epitaxial silicon, planar design. Ÿ Collector-emitter voltage VCE=160V. Ÿ Collector current IC=0.6A. Ÿ Transition frequency f T >100MHz @ IC=10mAdc, VCE=6Vdc, f=100MHz. Ÿ In compliance with ER RoHS 2002/95/EC directives. Ÿ MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, method 2026 Approx. Weight: 0.008gram Marking: G1 Rank Range L 3 C G1 1 2 B H 100-200 200-300 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ TSTG Parameter Vaule Collector-Base Voltage 180 Collector-Emitter Voltage 160 Emitter-Base Voltage 5 Collector Current 0.6 Total Device Dissipation 0.3 Thermal Resistance Form Junction to Ambient 416 Junction Temperature 150 Storage Temperature -55~+150 Unit V V V A W O C/W O C O C E MMBT5551 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Base cut-off current Emitter cut-off current DC current gain* Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBEX IEBO HFE HFE HFE HFE HFE Collector-Emitter saturation voltage VCE(SAT) Base-Emitter Saturation voltage* VBE(SAT) Input capacitance Output capacitance CIB COB Transition ferquency fT Delay time Rise time Storage time Fall time td tr ts tf Test Condition IC=100uA,IE=0 IC=1mA,IB=0 IE=100uA,IC=0 VCB=150V,IC=0 Min. Typ.Max.Units 180 160 5 0.1 0.1 0.1 0.1 VCE=150V,IB=0 VEB=5V,IC=0 IC=0.1mA,VCE=5V IC=1mA,VCE=5V IC=10mA,VCE=5V IC=50mA,VCE=5V IC=100mA,VCE=5V IC=10mA,IB=1mA IC=50mA,IB=5mA IC=10mA,IB=1mA IC=50mA,IB=5mA VCB=6V,IE=0,f=1MHZ VEB=0.5V,IC=0,f=1MHZ IC=10mA,VCE=6V, f=100MHZ VCC=3V,VBE=-0.5V, IC=10mA,IB=1mA VCC=3V,VBE=-0.5V, IB1=IB2=1mA 10 10 100 40 30 V V V uA uA uA uA 300 0.2 0.3 1.1 1.2 4.0 8.0 100 V V V V pF pF MHZ 35 35 200 50 nS nS nS nS *Pulse Test: Pulse Width