JST180N30D5

JST180N30D5 30V N-Channel Mosfet PDFNWB5*6-8L FEATURES ● RDS(ON) < 2.4mΩ @ VGS = 10V ● RDS(ON) < 3.3mΩ @ VGS = 4.5V APPLICATIONS  Load Switch  PWM Application  Power management MARKING 1: S 3: S 5: D 7: D 2: S 4: G 6: D 8: D N-CHANNEL MOSFET YYMM:Date Code(year&month) Maximum ratings (TC=25℃ unless otherwise noted) Symbol bol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 115 A TC = 100℃ 72 460 A 240 mJ 70 W 1.78 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note1 note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range A 1／6 JST180N30D5 MOSFET ELECTRICAL CHARACTERISTICS Tc=25 ℃ unless otherwise specified Symbol bol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = 250μA A 30 - - V IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA V On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID = 250μA 1 1.6 2.5 RDS(on) Static Drain-Source On-Resistance VGS =10V, ID =30A - 1.9 2.4 note3 VGS =4.5V, ID =15A - 2.5 3.3 - 4800 - pF - 735 - pF - 420 - pF - 40 - nC - 6 - nC - 19 - nC - 20 - ns - 32 - ns - 75 - ns - 28 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =25V, VGS = 0V, f = 1.0MHz VDS=15V, ID =24A, VGS =4.5V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDS =15V, ID=1A, RG= 1Ω, VGS =10V Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 115 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 230 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD=30A, TJ = 25℃ - - 1.2 V trr Reverse Recovery Time - 49 85 ns Qrr Reverse Recovery Charge TJ= 25°C, IS=1A, di/dt =100A/μs - 18 35 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2 . TJ=25℃,VDD=25V,VG=10V, RG=25Ω 3 . Pulse Test: Pulse width ≤ 380μs, Duty Cycle ≤ 2% 2／6 JST180N30D5 Typical Characteristics Figure1. Output Characteristics Figure3. Rdson-Drain Current Figure5. Capacitance Characteristics Figure2. Transfer Characteristics Figure4. Typical Source-Drain Diode Forward Voltage Figure6. Gate Charge 3／6 JST180N30D5 Figure7. Normalized Breakdown Voltage vs. Temperature Figure9. Safe Operation Area Figure8. Normalized on Resistance vs. Temperature Figure10. Maximum Drain Current vs. Case Temperature Figure11. Transient Thermal Response Curve 4／6 JST180N30D5 Figure 1. Gate Charge Test Circuit & Waveform Figure 2. Resistive Switching Test Circuit & Waveforms Figure 3. Unclamped Inductive Switching Test Circuit & Waveforms 5／6 JST180N30D5 Package Outline Dimensions Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° 6／6