JST60N30T2

JST60N30T2 N-Channel Power MOSFET FEATURES TO-252-2L RDS(ON)≤ 9m Ω @VGS=10V RDS(ON)≤ 12m Ω @VGS=4.5V 1. GATE 2. DRAIN 3. SOURCE APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterruptible Power Supply MARKING 2 1 3 EQUIV ALENT CIRCUIT YYMM=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 60 A Pulsed Drain Current IDM 240 A 75 mJ PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Parameter Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient EAS (1) (1).EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C  4 JST60N30T2 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ 30 34 Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.7 3.0 V Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =15A 9.5 12 mΩ VGS =10V, ID =15A 7 9 mΩ Off characteristics Drain-source breakdown voltage V On characteristics (note1) Forward transconductance gFS VDS =5V, ID =15A 1.0 15 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 2000 VDS =15V,VGS =0V, f =1MHz pF 280 160 Switching characteristics (note 2) Total gate charge Qg 23 VDS=10V, VGS=10V, Gate-source charge Qgs Gate-drain charge Qgd 4.5 Turn-on delay time td(on) 10 Turn-on rise time Turn-off delay time Turn-off fall time ID=25A tr VDD=15V,ID=20A, 8 td(off) VGS=10V,RG=1.8Ω 30 tf nC 7 ns 5 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current 1.2 V IS 60 A ISM 240 A VSD VGS =0V, IS=10A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. 24 JST60N30T2 Output Characteristics 100 Pulsed Ta=25℃ VGS=6V,7V,10V VDS=10V Pulsed VGS=5V 80 (A) 40 ID (A) 60 DRAIN CURRENT ID DRAIN CURRENT Transfer Characteristics 50 VGS=4V 40 20 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE Ta=25℃ 0 0.0 5 0.5 1.0 (V) 1.5 2.0 2.5 3.0 3.5 GATE TO SOURCE VOLTAGE ID RDS(ON) —— 14 VDS 20 10 VGS=3V 0 30 RDS(ON) 30 —— 4.0 VGS 4.5 5.0 (V) VGS Pulsed Ta=25℃ 25 ID=25A VGS=5V 10 8 6 VGS=10V RDS(ON) (mΩ) 12 20 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) Pulsed 15 Ta=100℃ 10 Ta=25℃ 5 4 2 5 10 15 20 25 30 35 DRAIN CURRENT 50 40 ID 45 0 50 3 4 5 6 7 8 GATE TO SOURCE VOLTAGE (A) IS —— VSD VGS 9 10 (V) Threshold Voltage 3.0 Pulsed 2.5 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 10 1 Ta=100℃ Ta=25℃ 0.1 2.0 ID=250uA 1.5 1.0 0.5 0.01 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD (V) 1.2 1.4 0.0 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 ( ℃) 3 4 JST60N30T2 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V Φ Dimensions In Millimeters Max. Min. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. 1.100 1.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. 0.043 0.051 4 4