ASDM30N80P-T

ASDM30N80P 30V N-Channel MOSFET Features  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge Product Summary V DS 30 V R DS(on),TYP@ VGS=10 V 5.0 mΩ 80 A Application  Load Switch  PWM Application ID Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 80 A TC = 100℃ 50 A 320 A 88 mJ 75 W ID IDM Continuous Drain Current Pulsed Drain Current note1 note2 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient TJ, TSTG TC = 25℃ Operating and Storage Temperature Range NOV 2018 Version1.0 1/7 1.68 62 -55 to +175 www.ascendsemi.com ℃/W ℃ 0755-86970486 ASDM30N80P 30V N-Channel MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 30 - - V VDS =30V, VGS = 0V, TJ=25℃ - - 1 VDS =24V, VGS = 0V, TJ=125℃ - - 10 VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.6 2.5 V Off Characteristic V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS=0V,ID=250μA uA On Characteristics VGS(th) RDS(on) gFS Static Drain-Source on-Resistance VGS =10V, ID =20A - 5.0 6 note3 VGS =4.5V, ID =10A - 6.8 12 Forward Transconductance VDS =5V, ID =10A - 20 - S - 1914 - pF - 270 - pF - 218 - pF - 11.1 - nC - 1.85 - nC - 6.8 - nC - 7.5 - ns - 14.5 - ns - 35.2 - ns - 9.6 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =25V, VGS =0V, f = 1.0MHz VDS =15V, ID =20A, VGS =4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=15A, RG=3.3Ω, VGS =10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 80 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 320 A VSD Drain to Source Diode Forward Voltage - - 1.2 V trr Body Diode Reverse Recovery Time - 32 - ns - 12 - nC Qrr Body Diode Reverse Recovery VGS = 0V, IS=30A IS=30A,dI/dt=100A/μs Charge Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=25V,VGS=10V, L=0.1mH, IAS=42A, RG=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOV 2018 Version1.0 2/7 www.ascendsemi.com 0755-86970486 ASDM30N80P 30V N-Channel MOSFET Typical Performance Characteristics Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms NOV 2018 Version1.0 3/7 www.ascendsemi.com 0755-86970486 ASDM30N80P 30V N-Channel MOSFET Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) NOV 2018 Version1.0 4/7 www.ascendsemi.com 0755-86970486 ASDM30N80P 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM30N80P-T 30N80 Package TO-220 Packing Quantity Tube 50/Tube MARKING PACKAGE Lot Number TO-220 30N80 Date Code NOV 2018 Version1.0 5/7 www.ascendsemi.com 0755-86970486 ASDM30N80P 30V N-Channel MOSFET TO-220 NOV 2018 Version1.0 6/7 www.ascendsemi.com 0755-86970486 ASDM30N80P 30V N-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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