ASDM30C25E-R

ASDM30C25E 30V N&P-Channel MOSFET Features Product Summary ● N+P Channel ● Enhancement mode V DS 30 -30 V ● Switching and High efficiency R DS(on),TYP@ VGS=±10 V 15 24 mΩ ● Pb-free lead plating; RoHS compliant R DS(on),TYP@ VGS=±4.5V 23 40 mΩ Application ID 25 -24 A ● Low on-resistance ● High battery density grooved N+P dual channel MOSFET ● Synchronous step-down converter applications ● Excellent RDSON and gate charge DFN3.3*3.3-8 Maximum ratings, at TA =25°C, unless otherwise specified Rating Symbol Parameter NMOS PMOS Unit V(BR)DSS Drain-Source breakdown voltage 30 -30 V VGS Gate-Source voltage ±20 ±20 V IS Diode continuous forward current TC =25°C 25 -24 A ID TC =25°C 25 -24 A Continuous drain current @VGS=±10V TC =100°C 16 -15 A IDM Pulse drain current tested ① TC =25°C 100 -96 A TA=25°C 11 -9 A IDSM Continuous drain current @VGS=±10V TA=70°C 9 -7 A 15 33 mJ EAS Avalanche energy, single pulsed ② PD Maximum power dissipation TC =25°C 14 20 W PDSM Maximum power dissipation ③ TA=25°C 2.8 2.8 W TSTG , TJ Storage and junction temperature range -55 to 150 -55 to 150 °C Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient NOV 2021 Version1.0 1/10 Typical 9 Unit 6.2 45 www.ascendsemi.com °C/W °C/W 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET N-Channel Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=30V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=30V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.9 2.4 V Drain-Source On-State Resistance ④ VGS=10V, ID=8A -- 15 21 mΩ RDS(ON) VGS=4.5V, ID=6A -- 23 32 mΩ 350 455 550 pF -- 75 130 pF -- 55 110 pF -- 5.4 -- Ω -- 11.3 -- nC -- 3 -- nC -- 4.3 -- nC -- 7 -- ns V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=8A, VGS=10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time ID=8A, -- 10 -- ns t d(off) Turn Off Delay Time RG=3Ω, - 22 -- ns tf Turn Off Fall Time -- 7 -- ns ISD=8A,VGS=0V -- 0.9 1.2 V Tj=25℃,Isd=8A, -- 9.5 -- ns -- 11.8 -- nC VDD=15V, VGS=10V Source Drain Diode Characteristics VSD t rr Qrr Forward on voltage Reverse Recovery Time VGS=0V Reverse Recovery Charge NOV 2021 Version1.0 2/10 di/dt=500A/μs www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET P-Channel Electrical Characteristics Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 -- -- V Zero Gate Voltage Drain Current(Tj=25℃) VDS=-30V,VGS=0V -- -- -1 μA Zero Gate Voltage Drain Current(Tj=125℃) VDS=-30V,VGS=0V -- -- -100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.3 -1.9 -2.4 V Drain-Source On-State Resistance ④ VGS=-10V, ID=-8A -- 24 34 mΩ RDS(ON) VGS=-4.5V, ID=-6A -- 40 57 mΩ 760 865 960 pF 60 140 200 pF 30 95 150 pF -- 12.3 -- Ω -- 19 -- nC -- 4.3 -- nC -- 6.5 -- nC -- 6 -- ns V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VDS=-15V,VGS=0V, f=1MHz f=1MHz VDS=-15V,ID=-8A, VGS=-10V Switching Characteristics t d(on) Turn on Delay Time tr Turn on Rise Time ID=-8A, -- 5 -- ns t d(off) Turn Off Delay Time RG=3Ω, - 25 -- ns tf Turn Off Fall Time -- 7 -- ns ISD=-8A,VGS=0V -- -0.9 -1.2 V Tj=25℃,Isd=-8A, -- 7 -- ns -- 6.3 -- nC VDD=-15V, VGS=-10V Source Drain Diode Characteristics VSD t rr Qrr Forward on voltage Reverse Recovery Time VGS=0V Reverse Recovery Charge NOV 2021 Version1.0 3/10 di/dt=-500A/μs www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) N-Channel Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) Fig1. Typical Output Characteristics VGS, Gate -Source Voltage (V) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage NOV 2021 Version1.0 4/10 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) N-Channel Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance) ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig 9 .Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms NOV 2021 Version1.0 5/10 Fig11. Switching Time Test Circuit and waveforms www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET -ID, -Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) P-Channel Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig2. -VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance -ID, -Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) -VGS, -Gate -Source Voltage (V) Fig4. Normalized On-Resistance Vs. Tj -ID,- Drain Current (A) -ISD, -Reverse Drain Current (A) Fig3. Typical Transfer Characteristics -VSD, -Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage NOV 2021 Version1.0 6/10 -VDS, -Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET C, Capacitance (pF) -VGS, -Gate-Source Voltage (V) P-Channel Typical Characteristics -VDS , -Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Waveforms NOV 2021 Version1.0 7/10 Fig11. Switching Time Test Circuit and waveforms www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM30C25E-R 30C25 DFN3.3*3.3-8 Tape&Reel 5000/Reel MARKING PACKAGE 30C25 DFN3.3*3.3-8 NOV 2021 Version1.0 8/10 www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET Dimensions(DFN3.3×3.3-8) NOV 2021 Version1.0 9/10 www.ascendsemi.com 0755-86970486 ASDM30C25E 30V N&P-Channel MOSFET IMPORTANT NOTICE ShenZhen Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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