ASDM68N80KQ-R

ASDM68N80KQ 68V N-Channel MOSFET Features Product Summary  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications V DS 68 V R DS(on),Typ@ VGS=10 V 7.7 mΩ 80 A ID Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial TO-252 Schematic Diagram Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage (VGS = 0V) TC = 25ºC Continuous Drain Current Gate-Source Voltage (note2) Avalanche Current Power Dissipation (note3) Unit VDSS 68 V 80 (note1) note1) Single Pulse Avalanche Energy Value ID TC = 100ºC Pulsed Drain Current Symbol TC = 25ºC 280 320 A VGSS ±20 V EAS 79 mJ IAs 23 A 120 W 60 W -55~+175 ºC TJ, Tstg Operating Junction and Storage Temperature Range A IDM PD TC = 100ºC 49 Thermal Resistance Value Parameter Symbol Unit TO-252 Thermal Resistance, Junction-to-Case RthJC 1.4 Thermal Resistance, Junction-to-Ambient RthJA 62 NOV 2018 Version1.0 1/7 ºC/W Ascend Semicondutor Co.,Ltd ASDM68N80KQ 68V N-Channel MOSFET Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 68 -- -- VDS = 68V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 68V, VGS = 0V, TJ = 100ºC -- -- 25 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 -- 4 V Drain-Source Drain Source On On-Resistance Resistance RDS(on) VGS = 10V, ID = 30A -- 7.7 9.5 mΩ Forward Transconductance gfs VDS = 10V, ID = 30A 17.1 -- -- S -- 3360 -- -- 1037 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 34V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 540 -- Total Gate Charge Qg -- 70 -- Gate-Source Charge Qgs -- 20 -- Gate-Drain Charge Qgd -- 17 -- Turn-on Delay Time td(on) -- 8 -- Turn-on Rise Time tr -- 7 -- Turn-off Delay Time td(off) -- 40 -- -- 15 -- -- -- 80 -- -- 320 Turn-off Fall Time VDD = 34V, ID = 50A, VGS = 10V VDD = 34V, ID = 50A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC C, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Time trr -- 30 -- ns Reverse Recovery Charge Qrr IF = 30A, diF/dt = 100A/μs -- 45 -- nC Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 42.5A, L=0.3mH,VDD = 50V, RG = 25Ω, Starting TJ = 25°C 25 3. The power dissipation PD is based on TJ(MAX)=175°C, C, using junction-to-case junction thermal resistance. NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM68N80KQ 68V N-Channel MOSFET Typical Characteristics TJ = 25ºC, C, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 100 10V 7V 6V 5V 4.5V 100 80 VDS = 5V ID, Drain Current (A) ID, Drain Current (A) 120 60 40 20 80 TJ = 125ºC 60 40 20 TJ = 25ºC 0 0 0 1 2 3 4 2 5 VDS, Drain-to-Source Voltage (V)) 3 6 Figure 4. Capacitance 16000 12 VGS = 10V TJ = 25ºC 11 10 9 8 12000 10000 8000 4000 2000 6 0 20 40 60 80 Ciss 6000 7 0 VGS = 0 f = 1MHz 14000 Capacitance (pF) RDS(on), On-Resistance (mΩ) 5 VGS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current Coss Crss 0 100 ID, Drain Current (A) 10 20 30 40 50 60 70 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 12 102 VDS = 35V 10 IS, Source Current (A) VGS, Gate-to-Source Voltage (V) 4 8 6 4 2 TJ = 125ºC 101 TJ = 25ºC 100 0 0 20 40 60 80 Qg, Total Gate Charge (nC)) NOV 2018 Version1.0 10-1 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) 3/7 Ascend Semicondutor Co.,Ltd ASDM68N80KQ 68V N-Channel MOSFET Typical Characteristics TJ = 25ºC, C, unless otherwise noted Figure 7. On-Resistance Resistance vs. Temperature Figure 8. Threshold Voltage vs. Temperature 0.6 VGS = 10V ID = 30A 2.0 0.4 VGS(th), (Variance) RDS(on), (Normalized) 2.5 1.5 1.0 0.5 ID = 250µA 0.2 0.0 -0.2 -0.4 -0.6 -0.8 0.8 0.0 -50 -25 0 25 50 75 100 125 -50 150 C) TJ, Junction Temperature (ºC) 0 25 50 75 100 125 150 TJ, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance Figure 10. Safe Operation Area 103 101 ID, Drain Current(A) ZthJC, Thermal Impedance (Normalized) -25 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 102 101 100 10-1 10-6 10-5 10-4 10-3 10-2 10-1 10-1 100 101 102 103 VDS, Drain-Source Voltage(V) Tp, Pulse Width (s) TJ, Junction Temperature (ºC) C) NOV 2018 Version1.0 tp = 10us tp = 100us tp = 1ms tp = 10ms DC 4/7 Ascend Semicondutor Co.,Ltd ASDM68N80KQ 68V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM68N80KQ-R 68N80 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE TO-252 NOV 2018 Version1.0 Quantity 68N80 5/7 Ascend Semicondutor ASDM68N80KQ 68V N-Channel MOSFET TO-252 NOV 2018 Version1.0 6/7 Ascend Semicondutor ASDM68N80KQ 68V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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