TF3400

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3400 TF3400 N-Channel 30-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 / SOT-23-3L 0.028Ω@ 10V 3 30V 1.GATE 5.8 A 0.033Ω@ 4.5V 2.SOURCE 0.052Ω@ 2.5V 3.DRAIN 1 General FEATURE 2 Equivalent Circuit MARKING ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package A01TF w APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter *w：week code Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C www.sztuofeng.com A Units V ±12 V ID 5.8 IDM 30 PD 1.4 W -55 to 150 °C TJ, TSTG Symbol A Maximum 30 t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 65 85 43 A Max 90 125 60 Units °C/W °C/W °C/W Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3400 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V 1 µA 100 nA 30 IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 28 mΩ 30 33 mΩ 48 52 mΩ VGS=4.5V, ID=5.0A gFS Forward Transconductance VDS=5V, ID=5.8A VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS=2.5V, ID=4.0A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A 25 Static Drain-Source On-Resistance Coss 1.0 VGS=10V, ID=5.8A RDS(ON) IS V 10 15 S 0.71 823 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=5.8A V A 1030 pF 99 pF 77 pF 1.2 3.6 Ω 9.7 12 nC 1.6 Qgd Gate Drain Charge 3.1 tD(on) Turn-On DelayTime 3.3 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω 1.2 2.5 nC nC 5 ns 4.8 7 ns 26.3 40 ns 4.1 6 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 16 20 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 8.9 12 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : June 2005 www.sztuofeng.com 2 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 10V 3V VDS=5V 16 20 4.5V 2.5V 12 ID(A) ID (A) 15 8 10 125°C VGS=2V 5 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 0 60 Normalized On-Resistance RDS(ON) (mΩ ) 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 3 1.8 50 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 0.8 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 1.0E+00 ID=5.8A 1.0E-01 50 125°C IS (A) RDS(ON) (mΩ ) 25°C 4 40 30 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 1.0E-05 1.0E-06 10 0 2 4 6 8 0.0 10 www.sztuofeng.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=5.8A 1200 Capacitance (pF) VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 Crss 200 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs Power (W) ID (Amps) 15 40 TJ(Max)=150°C TA=25°C 1ms 0.1s 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) 10.0 limited 5 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 4 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS TF3400 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.sztuofeng.com 5 Feb,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-3LPlastic-Encapsulate MOSFETS TF3400 SOT-23 -3L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L  Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-3L Suggested Pad Layout www.sztuofeng.com 6 Mar ,2018 V1.0