AP5N10BI

AP5N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =5A RDS(ON) < 125mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP5N10BI SOT-23 Marking Qty(PCS) MA6 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 3.2 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 3.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient(steady state)1 100 ℃/W RθJA Thermal Resistance Junction-ambient(t