APT60N60BCSG

600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOL MOS (B) TO Po we r Se miconduc tors -24 7 D 3 PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg D • Avalanche Energy Rated • Extreme dv/dt Rated G • Popular TO-247 or Surface Mount D3 Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT60N60B_SCS(G) UNIT Drain-Source Voltage 600 Volts Continuous Drain Current @ TC = 25°C 60 Continuous Drain Current @ TC = 100°C 38 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Volts Total Power Dissipation @ TC = 25°C 431 Watts Linear Derating Factor 3.45 W/°C PD TJ,TSTG TL dv/ dt IAR 230 Operating and Storage Junction Temperature Range -55 to 150 °C Lead Temperature: 0.063" from Case for 10 Sec. 260 MOSFET dv/dt Ruggedness (VDS = 480V) 50 V/ns 11 Amps Avalanche Current 2 2 EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3 3 mJ 1950 STATIC ELECTRICAL CHARACTERISTICS V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) RDS(on) IDSS IGSS VGS(th) Drain-Source On-State Resistance MIN 4 TYP MAX UNIT Volts 600 (VGS = 10V, ID = 44A) 0.045 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 250 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 nA 3.9 Volts Gate Threshold Voltage (VDS = VGS, ID = 3mA) 2.1 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com μA 4-2011 Characteristic / Test Conditions 050-7239 Rev C Symbol APT60N60B_SCS(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Reverse Transfer Capacitance f = 1 MHz Crss Qg 5 VGS = 10V Gate-Source Charge VDD = 400V Total Gate Charge Qgs Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr tf VGS = 15V VDD = 400V ID = 44A @ 25°C RG = 4.3Ω 10 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V 675 ID = 44A, RG = 4.3Ω 520 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V 1100 ID = 44A, RG = 4.3Ω 635 Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy MAX UNIT pF 290 150 34 50 30 20 100 RESISTIVE SWITCHING Turn-off Delay Time TYP 7200 8500 ID = 44A @ 25°C Rise Time td(off) MIN 190 nC ns μJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN TYP MAX Continuous Source Current (Body Diode) 44 ISM Pulsed Source Current 1 (Body Diode) 180 VSD Diode Forward Voltage 4 (VGS = 0V, IS = - 44A) 1.2 t rr Reverse Recovery Time (IS = -44A, dl S/dt = 100A/μs) Q rr Reverse Recovery Charge (IS = -44A, dl S/dt = 100A/μs) dv /dt Peak Diode Recovery dv/dt UNIT Amps Volts ns 600 17 μC 7 4 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP 0.29 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A 4 Pulse Test: Pulse width < 380μs, Duty Cycle < 2% 5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOS™ product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt. Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.30 0.7 0.5 0.15 Note: 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 050-7239 Rev C 4-2011 D = 0.9 0.25 0.20 0.3 t1 t2 0.05 0 0.1 SINGLE PULSE 0.05 10-5 10-4 °C/W t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT60N60B_SCS(G) 140 ID, DRAIN CURRENT (AMPERES) 15, 10 & 7V 6.5V 120 6V 100 80 5.5V 60 40 5V 20 4.5V 0 200 VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @