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LPC662
Low Power CMOS Dual Operational Amplifier
General Description
The LPC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltage from +5V to +15V, rail-to-rail output swing
in addition to an input common-mode range that includes
ground. Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this design.
Input VOS, drift, and broadband noise as well as voltage gain
(into 100 kΩ and 5 kΩ) are all equal to or better than widely
accepted bipolar equivalents, while the power supply
requirement is typically less than 0.5 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational
amplifier and LPC661 for a single CMOS operational
amplifier with these same features.
Applications
n High-impedance buffer
n Precision current-to-voltage converter
n
n
n
n
n
Long-term integrator
High-impedance preamplifier
Active filter
Sample-and-Hold circuit
Peak detector
Features
n
n
n
n
n
n
n
n
n
n
n
n
Rail-to-rail output swing
Micropower operation ( < 0.5 mW)
Specified for 100 kΩ and 5 kΩ loads
High voltage gain
120 dB
Low input offset voltage
3 mV
Low offset voltage drift
1.3 µV/˚C
Ultra low input bias current
2 fA
Input common-mode includes GND
Operating range from +5V to +15V
Low distortion
0.01% at 1 kHz
Slew rate
0.11 V/µs
Full military temperature range available
Application Circuit
Howland Current Pump
DS010548-23
© 2001 National Semiconductor Corporation
DS010548
www.national.com
LPC662 Low Power CMOS Dual Operational Amplifier
August 2000
LPC662
Absolute Maximum Ratings (Note 3)
Current at Power Supply Pin
Voltage at Input/Output Pin
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Operating Ratings (Note 3)
± Supply Voltage
Differential Input Voltage
Supply Voltage (V+ − V−)
Output Short Circuit to V+
Output Short Circuit to V−
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature
ESD Rating
(C = 100 pF, R = 1.5 kΩ)
Power Dissipation
Current at Input Pin
Current at Output Pin
35 mA
(V+) + 0.3V, (V−) −0.3V
Temperature Range
LPC662AMJ/883
LPC662AM
LPC662AI
LPC662I
Supply Range
Power Dissipation
Thermal Resistance (θJA) (Note 10)
8-Pin Ceramic DIP
8-Pin Molded DIP
8-Pin SO
8-Pin Side Brazed Ceramic DIP
16V
(Note 11)
(Note 1)
260˚C
−65˚C to +150˚C
150˚C
1000V
(Note 2)
± 5 mA
± 18 mA
−55˚C ≤ TJ ≤ +125˚C
−55˚C ≤ TJ ≤ +125˚C
−40˚C ≤ TJ ≤ +85˚C
−40˚C ≤ TJ ≤ +85˚C
4.75V to 15.5V
(Note 9)
100˚C/W
101˚C/W
165˚C/W
100˚C/W
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25˚C. Boldface limits apply at the temperature extremes. V+ = 5V, V−
= 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Parameter
Conditions
Typ
LPC662AM
LPC662AI
LPC662AMJ/883
Limit
LPC662I
Limit
Limit
(Note 4)
(Note 4)
Units
(Notes 4, 8)
Input Offset Voltage
1
Input Offset Voltage
3
3
6
mV
3.5
3.3
6.3
max
1.3
µV/˚C
Average Drift
Input Bias Current
0.002
20
100
Input Offset Current
0.001
0V ≤ VCM ≤ 12.0V
83
+
Rejection Ratio
V = 15V
Positive Power Supply
5V ≤ V+ ≤ 15V
Rejection Ratio
VO = 2.5V
Negative Power Supply
0V ≤ V− ≤ −10V
83
94
Input Common-Mode
V+ = 5V and 15V
Voltage Range
For CMRR ≥ 50 dB
Voltage Gain
RL = 100 kΩ (Note 5)
100
2
2
max
70
70
63
dB
68
68
61
min
70
70
63
dB
68
68
61
min
20
pA
Tera Ω
84
84
74
dB
83
73
min
−0.4
−0.1
−0.1
−0.1
V
0
0
0
max
V+ − 1.9
V+ − 2.3
V+ − 2.3
V+ − 2.3
V
V+ − 2.6
V+ − 2.5
V+ − 2.5
min
400
400
300
V/mV
250
300
200
min
180
180
90
V/mV
70
120
70
min
200
200
100
V/mV
150
160
80
min
100
100
50
V/mV
35
60
40
min
1000
Sourcing
Sinking
RL = 5 kΩ (Note 5)
500
1000
Sourcing
Sinking
www.national.com
max
82
Rejection Ratio
Large Signal
4
>1
Input Resistance
Common Mode
pA
4
250
2
(Continued)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C. Boldface limits apply at the temperature extremes. V+ = 5V, V−
= 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
LPC662AM
Parameter
Conditions
Typ
LPC662AI
LPC662I
LPC662AMJ/883
Limit
Limit
Limit
(Note 4)
(Note 4)
Units
4.970
4.940
V
min
(Notes 4, 8)
Output Swing
V+ = 5V
4.987
4.970
4.950
4.950
4.910
0.004
0.030
0.030
0.060
V
0.050
0.050
0.090
max
4.940
4.850
4.850
4.750
V
4.750
4.750
4.650
min
0.040
0.150
0.150
0.250
V
0.250
0.250
0.350
max
+
RL = 100 kΩ to V /2
V+ = 5V
+
RL = 5 kΩ to V /2
V+ = 15V
14.970
RL = 100 kΩ to V+/2
0.007
V+ = 15V
14.840
RL = 5 kΩ to V+/2
0.110
Output Current
Sourcing, VO = 0V
22
V+ = 5V
Sinking, VO = 5V
Output Current
Sourcing, VO = 0V
21
40
V+ = 15V
Sinking, VO = 13V
39
(Note 11)
Supply Current
Both Amplifiers
86
VO = 1.5V
3
14.920
14.920
14.880
V
14.880
14.880
14.820
min
0.030
0.030
0.060
V
0.050
0.050
0.090
max
14.680
14.680
14.580
V
14.600
14.600
14.480
min
0.220
0.220
0.320
V
0.300
0.300
0.400
max
16
16
13
mA
12
14
11
min
16
16
13
mA
12
14
11
min
19
28
23
mA
19
25
20
min
19
28
23
mA
19
24
19
min
120
120
140
µA
145
140
160
max
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LPC662
DC Electrical Characteristics
LPC662
AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25˚C. Boldface limits apply at the temperature extremes. V+ = 5V, V−
= 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Parameter
Conditions
Typ
LPC662AM
LPC662AI
LPC662I
LPC662AMJ/883
Limit
Limit
Limit
(Note 4)
(Note 4)
Units
(Notes 4, 8)
Slew Rate
(Note 6)
0.11
Gain-Bandwidth Product
0.07
0.07
0.05
V/µs
0.04
0.05
0.03
min
0.35
MHz
Phase Margin
50
Deg
Gain Margin
17
dB
dB
Amp-to-Amp Isolation
(Note 7)
130
Input Referred Voltage Noise
F = 1 kHz
42
Input Referred Current Noise
F = 1 kHz
0.0002
Total Harmonic Distortion
F = 1 kHz, AV = −10, V+ = 15V
0.01
%
RL = 100 kΩ, VO = 8 VPP
Note 1: Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of ± 30 mA over long term may adversely affect reliability.
Note 2: The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation of any ambient temperature is PD = (TJ(max)
− TA)/θJA.
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4: Limits are guaranteed by testing or correlation.
Note 5: V+ = 15V, VCM = 7.5V and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V.
Note 6: V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7: Input referred. V+ = 15V and RL = 100 kΩ connected to V+/2. Each amp excited in turn with 1 kHz to produce VO = 13 VPP.
Note 8: A military RETS electrical test specification is available on request. At the time of printing, the LPC662AMJ/883 RETS specification complied fully with the
boldface limits in this column. The LPC662AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9: For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ − TA)/θJA.
Note 10: All numbers apply for packages soldered directly into a PC board.
Note 11: Do not connect output to V+when V+ is greater than 13V or reliability may be adversely affected.
www.national.com
4
VS = ± 7.5V, TA = 25˚C unless otherwise specified
Supply Current vs
Supply Voltage
Input Bias Current
vs Temperature
DS010548-28
Input Common-Mode
Voltage Range vs
Temperature
LPC662
Typical Performance Characteristics
DS010548-29
Output Characteristics
Current Sinking
DS010548-30
Output Characteristics
Current Sourcing
DS010548-31
Input Voltage Noise
vs Frequency
DS010548-32
DS010548-33
5
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LPC662
Typical Performance Characteristics
VS = ± 7.5V, TA = 25˚C unless otherwise specified (Continued)
Crosstalk Rejection
vs Frequency
CMRR vs Frequency
DS010548-35
DS010548-34
CMRR vs Temperature
Open-Loop Voltage Gain
vs Temperature
DS010548-36
DS010548-38
Open-Loop
Frequency Response
Gain and Phase Responses
vs Load Capacitance
DS010548-39
DS010548-40
www.national.com
6
VS = ± 7.5V, TA = 25˚C unless otherwise specified (Continued)
Gain and Phase Responses
vs Temperature
Gain Error
(VOSvs VOUT)
DS010548-41
Non-Inverting Slew Rate
vs Temperature
DS010548-42
Inverting Slew Rate
vs Temperature
DS010548-43
Large-Signal Pulse
Non-Inverting Response
(AV = +1)
DS010548-44
Non-Inverting Small
Signal Pulse Response
(AV = +1)
DS010548-45
DS010548-46
7
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LPC662
Typical Performance Characteristics
LPC662
Typical Performance Characteristics
VS = ± 7.5V, TA = 25˚C unless otherwise specified (Continued)
Inverting Large-Signal
Pulse Response
Inverting Small-Signal
Pulse Response
DS010548-47
DS010548-48
Power Supply Rejection
Ratio vs Frequency
DS010548-37
Stability vs Capacitive Load
Stability vs Capacitive Load
DS010548-4
DS010548-5
Note: Avoid resistive loads of less than 500Ω, as they may cause
instability.
www.national.com
8
tolerated without oscillation. Note that in all cases, the output
will ring heavily when the load capacitance is near the
threshold for oscillation.
AMPLIFIER TOPOLOGY
The topology chosen for the LPC662 is unconventional
(compared to general-purpose op amps) in that the
traditional unity-gain buffer output stage is not used; instead,
the output is taken directly from the output of the integrator,
to allow rail-to-rail output swing. Since the buffer traditionally
delivers the power to the load, while maintaining high op
amp gain and stability, and must withstand shorts to either
rail, these tasks now fall to the integrator.
As a result of these demands, the integrator is a compound
affair with an embedded gain stage that is doubly fed forward
(via Cf and Cff) by a dedicated unity-gain compensation
driver. In addition, the output portion of the integrator is a
push-pull configuration for delivering heavy loads. While
sinking current the whole amplifier path consists of three
gain stages with one stage fed forward, whereas while
sourcing the path contains four gain stages with two fed
forward.
DS010548-7
FIGURE 2. Rx, Cx Improve Capacitive Load Tolerance
Capacitive load driving capability is enhanced by using a
pull up resistor to V+ Figure 3. Typically a pull up resistor
conducting 50 µA or more will significantly improve
capacitive load responses. The value of the pull up resistor
must be determined based on the current sinking capability
of the amplifier with respect to the desired output swing.
Open loop gain of the amplifier can also be affected by the
pull up resistor (see Electrical Characteristics).
DS010548-6
FIGURE 1. LPC662 Circuit Topology (Each Amplifier)
The large signal voltage gain while sourcing is comparable
to traditional bipolar op amps for load resistance of at least
5 kΩ. The gain while sinking is higher than most CMOS op
amps, due to the additional gain stage; however, when
driving load resistance of 5 kΩ or less, the gain will be
reduced as indicated in the Electrical Characteristics. The op
amp can drive load resistance as low as 500Ω without
instability.
DS010548-26
FIGURE 3. Compensating for Large
Capacitive Loads with A Pull Up Resistor
PRINTED-CIRCUIT-BOARD LAYOUT
FOR HIGH-IMPEDANCE WORK
It is generally recognized that any circuit which must operate
with less than 1000 pA of leakage current requires special
layout of the PC board. When one wishes to take advantage
of the ultra-low bias current of the LPC662, typically less
than 0.04 pA, it is essential to have an excellent layout.
Fortunately, the techniques for obtaining low leakages are
quite simple. First, the user must not ignore the surface
leakage of the PC board, even though it may sometimes
appear acceptably low, because under conditions of high
humidity or dust or contamination, the surface leakage will
be appreciable.
To minimize the effect of any surface leakage, lay out a ring
of foil completely surrounding the LPC662’s inputs and the
terminals of capacitors, diodes, conductors, resistors, relay
terminals, etc. connected to the op-amp’s inputs. See Figure
4. To have a significant effect, guard rings should be placed
on both the top and bottom of the PC board. This PC foil
must then be connected to a voltage which is at the same
voltage as the amplifier inputs, since no leakage current can
flow between two points at the same potential. For example,
a PC board trace-to-pad resistance of 1012 ohms, which is
normally considered a very large resistance, could leak 5 pA
if the trace were a 5V bus adjacent to the pad of an input.
COMPENSATING INPUT CAPACITANCE
Refer to the LMC660 or LMC662 datasheets to determine
whether or not a feedback capacitor will be necessary for
compensation and what the value of that capacitor would be.
CAPACITIVE LOAD TOLERANCE
Like many other op amps, the LPC662 may oscillate when
its applied load appears capacitive. The threshold of
oscillation varies both with load and circuit gain. The
configuration most sensitive to oscillation is a unity-gain
follower. See the Typical Performance Characteristics.
The load capacitance interacts with the op amp’s output
resistance to create an additional pole. If this pole frequency
is sufficiently low, it will degrade the op amp’s phase margin
so that the amplifier is no longer stable at low gains. The
addition of a small resistor (50Ω to 100Ω) in series with the
op amp’s output, and a capacitor (5 pF to 10 pF) from
inverting input to output pins, returns the phase margin to a
safe value without interfering with lower-frequency circuit
operation. Thus, larger values of capacitance can be
9
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LPC662
Application Hints
LPC662
Application Hints
performance. See Figure 5a, Figure 5b, Figure 5c for typical
connections of guard rings for standard op-amp
configurations. If both inputs are active and at high
impedance, the guard can be tied to ground and still provide
some protection; see Figure 5d.
(Continued)
This would cause a 100 times degradation from the
LPC662’s actual performance. However, if a guard ring is
held within 5 mV of the inputs, then even a resistance of
1011 ohms would cause only 0.05 pA of leakage current, or
perhaps a minor (2:1) degradation of the amplifier’s
DS010548-19
FIGURE 4. Example of Guard Ring in P.C. Board Layout, using the LPC660
DS010548-22
(c) Follower
DS010548-20
(a) Inverting Amplifier
DS010548-21
(b) Non-Inverting Amplifier
DS010548-23
(d) Howland Current Pump
FIGURE 5. Guard Ring Connections
The designer should be aware that when it is inappropriate
to lay out a PC board for the sake of just a few circuits, there
www.national.com
is another technique which is even better than a guard ring
on a PC board: Don’t insert the amplifier’s input pin into the
10
LPC662
Application Hints
(Continued)
board at all, but bend it up in the air and use only air as an
insulator. Air is an excellent insulator. In this case you may
have to forego some of the advantages of PC board
construction, but the advantages are sometimes well worth
the effort of using point-to-point up-in-the-air wiring.
See Figure 6.
DS010548-25
FIGURE 7. Simple Input Bias Current Test Circuit
DS010548-24
A suitable capacitor for C2 would be a 5 pF or 10 pF silver
mica, NPO ceramic, or air-dielectric. When determining the
magnitude of I−, the leakage of the capacitor and socket
must be taken into account. Switch S2 should be left shorted
most of the time, or else the dielectric absorption of the
capacitor C2 could cause errors.
Similarly, if S1 is shorted momentarily (while leaving S2
shorted)
(Input pins are lifted out of PC board and soldered directly to components.
All other pins connected to PC board.)
FIGURE 6. Air Wiring
BIAS CURRENT TESTING
The test method of Figure 7 is appropriate for bench-testing
bias current with reasonable accuracy. To understand its
operation, first close switch S2 momentarily. When S2 is
opened, then
where Cx is the stray capacitance at the + input.
Typical Single-Supply Applications
(V+ = 5.0 VDC)
Photodiode Current-to-Voltage Converter
Micropower Current Source
DS010548-18
DS010548-17
Note: A 5V bias on the photodiode can cut its capacitance by a factor of 2
or 3, leading to improved response and lower noise. However, this bias on
the photodiode will cause photodiode leakage (also known as its dark
current).
Note: (Upper limit of output range dictated by input common-mode range;
lower limit dictated by minimum current requirement of LM385.)
11
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LPC662
Typical Single-Supply Applications
(V+ = 5.0 VDC) (Continued)
Low-Leakage Sample-and-Hold
DS010548-8
Instrumentation Amplifier
DS010548-9
For good CMRR over temperature, low drift resistors should be used. Matching of R3 to R6 and R4 to R7 affects CMRR. Gain may be adjusted through R2.
CMRR may be adjusted through R7.
www.national.com
12
LPC662
Typical Single-Supply Applications
(V+ = 5.0 VDC) (Continued)
Sine-Wave Oscillator
DS010548-10
Oscillator frequency is determined by R1, R2, C1, and C2:
fOSC = 1/2πRC
where R = R1 = R2 and C = C1 = C2.
This circuit, as shown, oscillates at 2.0 kHz with a peak-to-peak output swing of 4.5V
1 Hz Square-Wave Oscillator
Power Amplifier
DS010548-12
DS010548-11
13
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LPC662
Typical Single-Supply Applications
(V+ = 5.0 VDC) (Continued)
10 Hz Bandpass Filter
10 Hz High-Pass Filter (2 dB Dip)
DS010548-14
DS010548-13
fO = 10 Hz
Q = 2.1
Gain = −8.8
fc = 10 Hz
d = 0.895
Gain = 1
1 Hz Low-Pass Filter
(Maximally Flat, Dual Supply Only)
High Gain Amplifier with Offset Voltage Reduction
DS010548-15
DS010548-16
Gain = −46.8
Output offset voltage reduced to the level of the input offset voltage of the
bottom amplifier (typically 1 mV), referred to VBIAS.
www.national.com
14
LPC662
Connection Diagram
8-Pin DIP/SO
DS010548-1
Top View
Ordering Information
Package
Temperature Range
Military
8-Pin
Industrial
LPC662AMD
NSC
Drawing
Transport
Media
D08C
Rail
Side Brazed
Ceramic DIP
8-Pin
LPC662AIM
Small Outline
or LPC662IM
8-Pin
LPC662AIN
Molded DIP
or LPC662IN
8-Pin
LPC662AMJ/883
M08A
Rail
Tape and Reel
N08E
Rail
J08A
Rail
Ceramic DIP
15
www.national.com
LPC662
Physical Dimensions
inches (millimeters) unless otherwise noted
8-Pin Cavity Dual-In-Line Package (D)
Order Number LPC662AMD
NS Package Number D08C
Ceramic Dual-In-Line Package (J)
Order Number LPC662AMJ/883
NS Package Number J08A
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16
LPC662
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
8-Pin Small Outline Molded Package (M)
Order Number LPC662AIM or LPC662IM
NS Package Number M08A
8-Pin Molded Dual-In-Line Package (N)
Order Number LPC662AIN or LPC662IN
NS Package Number N08E
17
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LPC662 Low Power CMOS Dual Operational Amplifier
Notes
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: support@nsc.com
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 180-530 85 86
Email: europe.support@nsc.com
Deutsch Tel: +49 (0) 69 9508 6208
English Tel: +44 (0) 870 24 0 2171
Français Tel: +33 (0) 1 41 91 8790
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: ap.support@nsc.com
National Semiconductor
Japan Ltd.
Tel: 81-3-5639-7560
Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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LPC662 Product Folder
Low Power CMOS Dual Operational Amplifier
Generic P/N 662
General
Description
Features
Package
& Models
Datasheet
Parametric Table
Samples
& Pricing
Design
Tools
Application
Notes
Parametric Table
Channels (Channels)
2
Maximum Supply Voltage (Volt)
15
Input Output Type
Vcm to V-, R-R Out
Offset Voltage, Max (mV)
3, 6
Bandwidth, typ (MHz)
.35
Input Bias Current, Temp Max (nA)
.0040
Slew Rate, typ (Volts/usec)
.11
Output Current, typ (mA)
21
Supply Current per Channel, typ (mA) .0430
Voltage Noise, typ (nV/Hz)
42
Minimum Supply Voltage (Volt)
Shut down
No
Special Features
-
5
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LPC66
2AIM
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LPC662IM
SOIC
NARROW
8
MSL
Full
production
LPC662AIMX
SOIC
NARROW
8
MSL
Full
LPC662A.MOD N/A
production
LPC662IMX
SOIC
NARROW
8
MSL
Full
production
N/A
N/A
N/A
24 Hour
Samples
Buy Now
Buy Now
N/A
1K+ $0.8100
rail
of
95
[logo]¢2¢T
LPC66
2IM
1K+ $1.2500
reel [logo]¢2¢T
of
LPC66
2500
2AIM
1K+ $0.8100
reel [logo]¢2¢T
of
LPC66
2500
2IM
LPC662AI
MDC
Die
Full
LPC662A.MOD N/A
production
Samples
tray
of
N/A
-
LPC662I MDC
Die
Full
production
Samples
tray
of
N/A
-
Wafer
Full
LPC662A.MOD N/A
production
wafer
jar
of
N/A
-
Wafer
Full
production
wafer
jar
of
N/A
-
LPC662AI
MWC
LPC662I MWC
N/A
N/A
N/A
N/A
General Description
The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide
range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode
range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a
problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5
k ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement
is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational
amplifier with these same features.
Features
Rail-to-rail output swing
Micropower operation (
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