FMBS5551

FMBS5551 FMBS5551 NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. C1 E NC B C pin #1 C SuperSOTTM-6 single Mark: .3S1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 160 180 6.0 600 - 55 ~ 150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, VCE = 10, f = 100MHz VCE = 10V, IC = 0, f = 1.0MHz VBE = 0.5V, IC = 0, f = 1.0MHz IC = 1.0mA, VCE = 10V, f = 1.0KHz IC = 250µA, VCE = 5.0V, RS = 1.0KΩ, f = 10 Hz to 15.7KHz 50 100 80 80 30 Min. 160 180 6.0 50 50 50 Max. Units V V V nA µA nA Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cut-off Current DC Current Gain On Characteristics 250 0.15 0.2 1.0 1.0 300 6.0 20 250 8.0 dB V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small Signal Characteristics fT Cobo Cibo hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Small Single Current Gain Noise Figure MHz pF pF * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBS5551 Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation * Thermal Resistance, Junction to Ambient, total Max. 700 180 Units mW °C/W * Device mounted on a 1 in 2 pad of 2 oz copper. ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBS5551 Typical Characteristics vs Collector Current 250 200 150 25 °C 125 °C VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Voltage vs Collector Current 0.5 0.4 0.3 β β = 10 β 100 - 40 °C 0.2 0.1 0 β β 25 °C 50 0 0.1 V C E = 5V 125 °C - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 1 β 10 100 I C - COLLECTOR CURRE NT (mA) 200 Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 β = 10 β β V BEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) β Voltage vs Collector Current β - 40 °C Collector Current 1 0.8 - 40 °C 25 °C 125 °C 0.6 0.4 0.2 0 0.1 25 °C β 125 °C VCE = 5V 1 10 100 I - COLLECTOR CURRE NT (mA) 200 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO- COLLE CTOR CURRENT (nA) 50 VCB = 100V BV CER - BREAKDOWN VOLTAGE (V) Between Emitter-Base 260 I C = 1.0 mA 240 10 220 200 Ω 180 Ω Ω 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 125 160 0.1 1 10 Ω 100 1000 RESISTANCEΩ Ω ) (k Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBS5551 Typical Characteristics (Continued) h FE - SMALL SIGNAL CURRENT GAIN vs Collector Current 16 FREG = 20 MHz V CE = 10V 30 f = 1.0 MHz 25 CAPACITANCE (pF) 12 20 15 8 10 C ib C cb 1 10 100 4 5 0 0.1 0 1 V CE - COLLECTOR VOLTAGE (V) 10 I C - COLLECTOR CURRENT (mA) 50 Figure 7. Input and Output Capacitance vs Reverse Voltage Figure 8. Small Signal current Gain vs Collector Current ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBS5551 Package Dimensions SuperSOTTM-6 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I13