IXGT50N60C2

IXGH50N60C2 IXGT50N60C2 HiPerFASTTM High Speed IGBT C2-Class VCES = IC110 = VCE(sat)  tfi(typ) = 600V 50A 2.7V 48ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1ms 75 50 300 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 80 @VCE  VCES A PC TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C  1.13/10 Nm/lb.in  4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-268 TO-247 G E C (Tab) TO-247 (IXGH) G C E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features   Very High Frequency IGBT Square RBSOA High Current Handling Capability International Standard Packages Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 125C © 2014 IXYS CORPORATION, All Rights Reserved Applications V  50 A 1 mA  100 nA 2.7 V V 1.8 High Power Density Low Gate Drive Requirement V 5.5 TJ = 125C IGES      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) PFC Circuits AC Motor Drives DC Servo & Robot Drives DC Choppers DS99147A(02/14) IXGH50N60C2 IXGT50N60C2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS 40 Inductive load, TJ = 25°C IC = 40A, VGE = 15V 51 S 3700 230 50 pF pF pF 138 25 40 nC nC nC 18 25 ns ns 115 48 0.38 VCE = 0.8 • VCES, RG = 2 Note 2 Inductive load, TJ = 125°C IC = 40A, VGE = 15V VCE = 0.8 • VCES, RG = 2 Note 2 TO-247 TO-268 Outline 150 0.70 Terminals: 1 - Gate 3 - Emitter 2,4 - Collector ns ns mJ 18 25 1.4 170 60 0.74 ns ns mJ ns ns mJ 0.21 0.31 °C/W °C/W TO-247 Outline Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 1 2 P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH50N60C2 IXGT50N60C2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 80 320 V GE = 15V 13V 11V 70 V GE = 15V 13V 280 50 40 6V 30 11V 240 7V I C - Amperes I C - Amperes 60 9V 20 200 9V 160 120 7V 80 10 40 5V 0 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 Fig. 3. Output Characteristics V GE = 15V 13V 11V I C - Amperes 60 9V V GE = 15V 1.1 7V 50 40 6V 30 20 1.0 I C = 80A 0.9 I C = 40A 0.8 0.7 0.6 10 I C = 20A 5V 0 0.5 0.5 1 1.5 2 2.5 3 3.5 4 25 50 V CE - Volts 75 100 125 150 8 9 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 4.8 200 TJ = 25ºC 4.5 160 4.2 I C = 80A 40A 20A 3.9 3.6 I C - Amperes VC E - Volts 10 1.2 VC E ( s a t )- Normalized 70 8 Fig. 4. Dependence of V CE(sat) on Tem perature @ T J = 125ºC 80 6 V C E - Volts V C E - Volts 3.3 3.0 120 80 T J = 125 ºC 25 ºC 40 2.7 0 2.4 5 7 9 11 13 V G E - Volts © 2014 IXYS CORPORATION, All Rights Reserved 15 17 4 5 6 V G E - Volts 7 IXGH50N60C2 IXGT50N60C2 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 70 3.0 T J = 25 ºC 60 I C = 80A 2.4 E o f f - milliJoules g f s - Siemens 50 125 ºC 40 30 20 1.8 TJ = 125ºC VGE = 15V VCE = 480V 1.2 I C = 40A 0.6 10 I C = 20A 0 0.0 0 50 100 150 200 2 4 6 8 10 12 14 I C - Amperes R G - Ohms Fig. 9. Dependence of Turn-Off Energy on Ic Fig. 10. Dependence of Turn-Off Energy on Tem perature 16 18 2.4 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 1.6 RG = 2Ω RG = 10Ω - - - V GE = 15V V CE = 480V 2 E o f f - milliJoules E o f f - MilliJoules 2 1.2 TJ = 125ºC 0.8 1.6 I C = 80A 1.2 I C = 40A 0.8 TJ = 25ºC 0.4 0.4 0 0 20 30 40 50 60 70 I C = 20A 25 80 50 I C - Amperes 100 125 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 200 450 td(off) tfi ------ Switching Time - nanoseconds Switching Time - nanoseconds 75 TJ - Degrees Centigrade TJ = 125ºC VGE = 15V VCE = 480V 350 250 I C = 20A I C = 40A 150 I C = 80A 50 td(off) tfi - - - - R G = 2Ω VGE = 15V VCE = 480V 160 TJ = 125ºC 120 TJ = 25ºC 80 40 2 4 6 8 10 12 14 16 18 R G - Ohms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 20 30 40 50 I C - Amperes 60 70 80 IXGH50N60C2 IXGT50N60C2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Reverse-Bias Safe Operating Area 90 td(off) tfi - - - - - 180 80 I C = 20A RG = 2Ω V GE = 15V V CE = 480V 160 140 70 60 120 I C - Amperes Switching Time - nanoseconds 200 I C = 80A 100 80 I C = 40A 50 40 30 T J = 125 º C 20 60 40 RG = 10Ω dv/dt < 10 I C = 20A 20 0 25 50 75 100 125 100 200 300 TJ - Degrees Centigrade V 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 16 10000 V CE = 300V IC = 40A IG = 10mA 12 f = 1 MHz Capacitance - picoFarrads 14 V G E - Volts 400 CE 10 8 6 4 Cies 1000 Coes 100 Cres 2 10 0 0 30 60 90 120 150 0 5 10 15 20 25 30 35 40 V C E - Volts Q G - nanoCoulombs Fig. 17. Maxim um Transient Therm al Resistance 0.35 Z ( t h ) J C - ºC / W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2014 IXYS CORPORATION, All Rights Reserved 10 Pulse Width - milliseconds 100 1000 IXYS REF: IXG_50N60C2(62) 02-18-04