IXGT60N60C3D1

GenX3TM 600V IGBTs with Diode IXGH60N60C3D1 IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 60A 2.5V 50ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC = 25°C, (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms 75 60 26 300 A A A A IA EAS TC = 25°C TC = 25°C 40 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load ICM = 125 VCE ≤ VCES A PC TC = 25°C 380 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 4 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 G Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES, VGE= 0V = 250µA, VCE = VGE 5.5 G E C (Tab) G = Gate E = Emitter IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V TJ = 125°C 2.2 1.7 z z z z z Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Anti-Parallel Ultra Fast Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement V Applications z ±100 nA z 2.5 V V z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved C = Collector Tab = Collector Features z 50 µA 1 mA TJ = 125°C C (Tab) E TO-268 (IXGT) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100009B(01/10) IXGH60N60C3D1 IXGT60N60C3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff = 40A, VCE = 10V, Note 1 23 Inductive Load, TJ = 125°C IC = 40A, VGE = 15V VCE = 480V, RG = 3Ω Note 2 Inductive Load, TJ = 125°C IC = 40A, VGE = 15V VCE = 480V, RG = 3Ω Note 2 RthJC RthCK TO-268 (IXGT) Outline 38 S 2810 210 80 pF pF pF 115 22 43 nC nC nC 21 33 0.80 70 50 0.45 ns ns mJ ns ns mJ 110 0.80 21 33 1.25 112 86 0.80 ns ns mJ ns ns mJ 0.21 0.33 °C/W °C/W Terminals: 1 - Gate 3 - Emitter 2 - Collector Tab - Collector TO-247 (IXGH) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ =150°C 1.6 IRM T = 100°C IF = 30A, VGE = 0V, diF/dt =100 A/µs, J TJ =100°C VR = 100V IF = 1A; -di/dt = 100 A/µs, VR = 30V 100 25 trr 2.7 4 RthJC 1 ∅P 3 V V A ns ns 0.9 °C/W e Terminals: 1 - Gate 3 - Emitter Dim. Notes: 2 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Tab - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH60N60C3D1 IXGT60N60C3D1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 300 VGE = 15V 13V VGE = 15V 13V 11V 70 250 11V 9V IC - Amperes IC - Amperes 60 50 40 30 7V 200 150 9V 100 20 7V 50 10 5V 0 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 2 4 6 80 14 16 VGE = 15V 1.1 I 9V VCE(sat) - Normalized IC - Amperes 12 1.2 VGE = 15V 13V 11V 60 50 40 7V 30 20 10 C = 80A 1.0 0.9 I C = 40A 0.8 0.7 I 0.6 5V 0 C = 20A 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 6.0 TJ = 25ºC 5.5 140 120 5.0 I 4.5 C 4.0 = 80A 40A 20A IC - Amperes VCE - Volts 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 70 8 VCE - Volts VCE - Volts 3.5 100 60 3.0 40 2.5 20 2.0 TJ = 125ºC 25ºC - 40ºC 80 0 6 7 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGH60N60C3D1 IXGT60N60C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 70 16 TJ = - 40ºC VGE - Volts 125ºC 40 I C = 40A I G = 10 mA 12 25ºC 50 g f s - Siemens VCE = 300V 14 60 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 140 10,000 Capacitance - PicoFarads 120 Cies 100 IC - Amperes 1,000 Coes 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 80 60 40 TJ = 125ºC 20 RG = 3Ω dv / dt < 10V / ns 0 100 150 200 250 VCE - Volts 300 350 400 450 500 550 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGH60N60C3D1 IXGT60N60C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.0 Eoff 3.5 Eon - --- 5.0 4.0 4.5 3.5 4.0 Eoff TJ = 125ºC , VGE = 15V = 80A 2.5 3.5 2.0 3.0 1.5 2.5 I C = 40A 1.0 0.5 0.0 3 4 5 6 7 8 9 10 11 12 13 14 3.0 3.0 VCE = 480V 2.5 2.5 TJ = 125ºC 2.0 1.5 2.0 1.0 1.5 0.5 1.0 0.0 1.5 0.5 0.0 20 15 25 30 35 40 4.0 3.5 ---- I C = 80A 1.5 2.0 1.0 1.5 I C = 40A 55 65 75 85 95 105 115 0.5 125 tf 240 VCE = 480V 220 200 120 180 110 I C 160 = 80A 100 140 I C 100 70 80 60 60 3 4 5 6 7 8 td(off) - - - - 140 160 130 140 80 90 60 40 20 50 55 13 14 15 tf 60 65 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 70 td(off) - - - - 120 75 80 VCE = 480V I C = 80A 110 100 100 80 90 I C = 40A 60 80 70 40 70 60 20 80 TJ = 25ºC 45 12 130 120 t f - Nanoseconds t f - Nanoseconds 100 t d(off) - Nanoseconds TJ = 125ºC 40 11 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 60 125 t d(off) - Nanoseconds 120 110 35 10 RG = 3Ω , VGE = 15V 120 30 9 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 480V 25 120 = 40A 80 RG = 3Ω , VGE = 15V 20 260 RG - Ohms 180 100 80 130 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 75 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 160 70 td(off) - - - - 90 1.0 0.0 45 t f - Nanoseconds E off - MilliJoules 2.5 35 65 t d(off) - Nanoseconds Eon - MilliJoules 2.0 tf 140 3.0 VCE = 480V 25 60 280 150 RG = 3Ω , VGE = 15V 0.5 55 170 160 2.5 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eon 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 1.0 TJ = 25ºC RG - Ohms 3.0 2.0 E on - MilliJoules C E on - MilliJoules E off - MilliJoules 4.0 I 3.5 ---- E off - MilliJoules VCE = 480V 3.0 Eon RG = 3Ω , VGE = 15V IXGH60N60C3D1 IXGT60N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 140 = 80A 40 35 60 30 40 I C 25 = 40A 20 20 0 15 4 5 6 7 8 9 10 11 12 13 14 27 td(on) - - - - 90 RG = 3Ω , VGE = 15V 26 80 VCE = 480V 25 70 24 TJ = 25ºC, 125ºC 60 23 50 22 40 21 30 20 20 19 10 18 20 15 t d(on) - Nanoseconds C t d(on) - Nanoseconds I 80 3 tr 45 VCE = 480V 100 28 100 td(on) - - - - TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 120 t r - Nanoseconds 110 50 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 110 29 tr 100 td(on) - - - - 28 RG = 3Ω , VGE = 15V 27 VCE = 480V 80 26 70 25 I C = 80A 60 24 50 23 40 t d(on) - Nanoseconds t r - Nanoseconds 90 22 I C = 40A 30 21 20 25 35 45 55 65 75 85 95 105 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_60N60C3(6D)01-15-10-E IXGH60N60C3D1 IXGT60N60C3D1 1000 60 A nC 50 IF 30 800 Qr 40 25 IRM 600 TVJ= 100°C TVJ= 25°C IF= 60A IF= 30A IF= 15A 400 15 20 10 200 10 0 IF= 60A IF= 30A IF= 15A 20 TVJ= 150°C 30 TVJ= 100°C VR = 300V A TVJ= 100°C VR = 300V 0 1 2 5 0 100 3 V A/µs 1000 -diF/dt VF Fig. 21 Forward current IF versus VF Fig. 22 Reverse recovery charge Qr versus -diF/dt 90 2.0 trr Kf 0 200 400 600 A/µs 800 -diF/dt 1000 Fig. 23 Peak reverse current IRM versus -diF/dt 20 TVJ= 100°C VR = 300V ns 1.5 0 80 IRM µs V V FR 15 tfr 0.75 VFR IF= 60A IF= 30A IF= 15A 1.0 1.00 TVJ= 100°C VR = 300V 10 0.50 tfr 70 0.5 5 0.25 Qr 0.0 0 40 80 120 °C 160 60 0 T VJ 200 400 600 800 A/µs 1000 0 0 200 400 -diF/dt Fig. 24 Dynamic parameters Qr, IRM versus TVJ Fig. 25 Recovery time trr versus -diF/dt 0.00 600 A/µs 800 1000 diF/dt Fig. 26 Peak forward voltage VFR and tfr versus diF/dt 1 K/W Constants for ZthJC calculation: i 0.1 Z thJC 1 2 3 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 t s 1 Fig. 27 Transient thermal resistance junction to case © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: G_60N60C3(6D)01-15-10-E Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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