IXGT60N60C2

Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE(sat) tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 60 A ICM TC = 25°C, 1 ms 300 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V PC TC = 25°C ICM = 100 A 480 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXGH) C (TAB) G Mounting torque (TO-247) 1.13/10Nm/lb.in. Weight TO-247 AD TO-268 6 4 g g C E TO-268 (IXGT) G C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features z z Md = 600 V = 75 A = 2.5 V = 35 ns z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 50 A, VGE = 15 V © 2003 IXYS All rights reserved 3.0 TJ = 25°C TJ = 150°C TJ = 25°C TJ = 125°C 2.1 1.8 5.0 V 50 1 µA mA ±100 nA 2.5 V V z z z z z PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z High power density Very fast switching speeds for high frequency applications DS99043A(09/03) IXGH 60N60C2 IXGT 60N60C2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 40 58 S 3900 pF 280 pF 97 pF 146 nC 28 nC 50 nC ∅P Cres Qg Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi 18 ns Inductive load, TJ = 25°°C 25 ns IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 Ω 95 Eoff Eon td(off) tfi Inductive load, TJ = 125°°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 Ω Eoff ns ns 0.48 0.8 mJ 18 ns 25 ns 0.45 mJ 130 ns 80 ns 1.2 mJ RthJC RthCK 150 35 td(on) tri TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.26 K/W (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 60N60C2 IXGT 60N60C2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 100 200 VG E = 15V 13V 11V 90 VG E = 15V 13V 11V 175 70 7V 60 50 40 30 125 100 7V 75 50 20 5V 10 25 5V 0 0 0.5 1 1.5 2 2.5 3 1 3.5 1.5 2 V CE - Volts Fig. 3. Output Characteristics 2.5 3 V CE - Volts 100 4 4.5 1.2 VG E = 15V 13V 11V 80 9V 1.1 70 VC E (sat) - Normalized 90 7V 60 50 40 30 5V VG E = 15V I C = 100A 1 0.9 I C = 50A 0.8 0.7 I C = 25A 20 0.6 10 0 0.5 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage Fig. 6. Input Admittance 5 200 T J = 25º C 4.5 175 150 I C - Amperes 4 VCE - Volts 3.5 Fig. 4. Temperature Dependence of V CE(sat) @ 125 Deg. C I C - Amperes 9V 150 I C - Amperes I C - Amperes 80 9V 3.5 3 2.5 I C = 100A 2 100 75 T J = 125º C 50 50A 1.5 125 25º C -40º C 25 25A 1 0 5 6 7 8 9 10 11 V GE - Volts © 2003 IXYS All rights reserved 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 V GE - Volts 7 7.5 8 8.5 IXGH 60N60C2 IXGT 60N60C2 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 100 6 TJ = 125º C VGE = 15V VCE = 400V 90 T J = -40º C 25º C 70 E off - milliJoules g f s - Siemens 80 5 125º C 60 50 40 30 20 I C = 100A 4 I C = 75A 3 I C = 50A 2 I C = 25A 1 10 0 0 0 25 50 75 100 125 150 175 2 200 E off - milliJoules E off - MilliJoules 14 R G = 2 Ohms R G= 10 Ohms - - - - - T J = 125 ºC 2 T J = 25 ºC I C = 50A 0 0 60 70 80 90 I C = 75A 2 1 50 I C = 100A 3 1 40 16 VG E = 15V VC E = 400V 100 I C = 25A 25 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance 15 10000 VC E = 300V I C = 50A I G = 10mA Capacitance - pF VG E - Volts 12 5 4 3 12 10 Fig. 10. Dependence of Eoff on Temperature VG E = 15V VC E = 400V 30 8 Fig. 9. Dependence of Eoff on IC R G = 2 Ohms R G = 10 Ohms - - - - - 20 6 R G - Ohms 5 4 4 I C - Amperes 9 6 f = 1M Hz C ies 1000 C oes 100 C res 3 0 10 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40 V CE - Volts Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 60N60C2 IXGT 60N60C2 F ig . 13. M aximu m Tran sien t Th ermal R esistan ce 0 .3 R (th) J C - (ºC/W) 0 .25 0 .2 0 .15 0.1 0 .05 1 10 10 0 Puls e W idth - millis ec onds © 2003 IXYS All rights reserved 10 0 0 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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