SI4435DDY-T1-E3

Si4435DDY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 • TrenchFET® power MOSFET D 5 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available Top View 1 S 2 S 3 S 4 G APPLICATIONS S • Load switches • Battery switch G PRODUCT SUMMARY VDS (V) -30 RDS(on) max. () at VGS = -10 V 0.0240 RDS(on) max. () at VGS = -4.5 V 0.0350 Qg typ. (nC) D 15 ID (A) d -11.4 Configuration Single P-Channel MOSFET ORDERING INFORMATION Package SO-8 Lead (Pb)-free Si4435DDY-T1-E3 Lead (Pb)-free and halogen-free Si4435DDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage SYMBOL VDS LIMIT -30 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current (TJ = 150 °C) -9.1 ID TA = 25 °C -8.1 a, b -6.5 a, b TA = 70 °C Continuous source-drain diode current Avalanche current Single-pulse avalanche energy IDM TC = 25 °C -4.1 -2 a, b IAS -20 EAS 20 TC = 25 °C Maximum power dissipation mJ 5 TC = 70 °C 3.2 PD TA = 25 °C W 2.5 a, b 1.6 a, b TA = 70 °C Operating junction and storage temperature range A -50 IS TA = 25 °C L = 0.1 mH V -11.4 TC = 70 °C Pulsed drain current UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c t  10 s Maximum junction-to-foot Steady state Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 85 °C/W d. Based on TC = 25 °C S09-0863-Rev. C, 18-May-09 SYMBOL RthJA TYPICAL 38 MAXIMUM 50 RthJF 20 25 UNIT °C/W Document Number: 68841 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435DDY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - V - -31 - - 4.5 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -5 VDS  -10 V, VGS = -10 V -30 - - A  VGS = -10 V, ID = -9.1 A - 0.0195 0.0240 VGS = -4.5 V, ID = -6.9 A - 0.0280 0.0350 VDS = -10 V, ID = -9.1 A - 23 - - 1350 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 215 - - 185 - RDS(on) gfs μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -10 V, ID = -9.1 A - 32 50 - 15 25 VDS = -15 V, VGS = -4.5 V, ID = -9.1 A - 4 - - 7.5 - f = 1 MHz - 5.8 - - 10 15 - 8 15 td(on) tr td(off) VDD = -15 V, RL = 15  ID  -1 A, VGEN = -10 V, Rg = 1  - 45 70 tf - 12 25 td(on) - 42 70 tr td(off) VDD = -15 V, RL = 15  ID  -1 A, VGEN = -4.5 V, Rg = 1  tf - 35 60 - 40 70 - 16 30 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current TC = 25 °C IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb IS = -2 A, VGS = 0 V IF = -2 A, di/dt = 100 A/μs, TJ = 25 °C - - -4.1 - - -50 A - -0.75 -1.2 V - 34 60 ns - 22 40 nC - 11 - - 23 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0863-Rev. C, 18-May-09 Document Number: 68841 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435DDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 50 VGS = 10 V thru 5 V 0.8 ID - Drain Current (A) I D - Drain Current (A) 40 VGS = 4 V 30 20 10 0.5 1.0 1.5 0.4 TC = 25 °C TC = 125 °C 0.0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 2400 0.05 0.04 1800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 0.2 VGS = 3 V 0 0.0 TC = - 55 °C VGS = 4.5 V 0.03 VGS = 10 V 0.02 Ciss 1200 600 0.01 Coss Crss 0 0 0 10 20 30 40 0 50 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.8 R DS(on) - On-Resistance (Normalized) ID = 9.1 A VGS - Gate-to-Source Voltage (V) 6 8 VDS = 15 V 6 VDS = 7.5 V VDS = 22.5 V 4 2 ID = 9.1 A VGS = 10 V 1.5 1.2 0.9 VGS = 4.5 V 0 0 9 18 27 36 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S09-0863-Rev. C, 18-May-09 Document Number: 68841 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435DDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.06 ID = 9.1 A 0.05 R DS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.001 0.0 TJ = 125 °C 0.03 0.02 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 100 80 0.4 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.04 ID = 1 mA 60 40 0.0 20 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 100 s, DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S09-0863-Rev. C, 18-May-09 Document Number: 68841 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435DDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 ID - Drain Current (A) 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 6.0 2.0 4.8 1.6 3.6 1.2 Power (W) Power (W) Current Derating a 2.4 1.2 0.8 0.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S09-0863-Rev. C, 18-May-09 Document Number: 68841 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4435DDY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDM Z thJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10-3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68841. S09-0863-Rev. C, 18-May-09 Document Number: 68841 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000