NTE74HC08

NTE74HC08 Integrated Circuit TTL − High Speed CMOS, Quad, 2−Input AND Gate Description: The NTE74HC08 is a logic function in a 14−Lead plastic DIP type package fabricated using advanced silicon−gate CMOS technology which provides the inherent benefits of CMOS − low quiescent power and wide power supply range. This device is input and output characteristic and pinout compatible with standard NTE74LS logic families. All inputs are protected from static discharge damage by internal diodes to VCC and ground. The NTE74HC08 is intended to interface between TTL and NMOS components and standard CMOS devices. This device is also a plug−in replacement for LS−TTL devices and can be used to reduce power consumption in existing designs. Features: D Output Drive Capability: 10 LSTTL Loads D Outputs Directly Interface to CMOS, NMOS, and TTL D Operating Voltage range: 2V to 6V D Low Input Current: 1.0μA D High Noise Immunity Characteristics of CMOS Devices Absolute Maximum Ratings: (Note 1, Note 2) Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to +7.0V DC Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VCC +0.5V DC Output Voltage, VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to VCC + 0.5V DC Input Current (Per Pin), IIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA DC Output Current (Per Pin), IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25mA DC VCC or GND Current (Per Pin), ICC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50mA Power Dissipation (Note 3), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be operable above the Recommended Operating Conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the Recommended Operating Conditions may effect device reliability. The Absolute Maximum Ratings are stress ratings only. Note 2. Unless otherwise specified, all voltages are referenced to GND. Note 3. Power Dissipation temperature derating: 12mW/°C from +65°C to +85°C. Recommended Operating Conditions: Parameter Symbol Min Typ Max Unit VCC 2.0 − 6.0 V VIN, VOUT 0 − VCC V Operating Temperature Range TA −55 − +125 °C Input Rise or Fall Times VCC = 2.0V tr, tf − − 1000 ns VCC = 4.5V − − 500 ns VCC = 6.0V − − 400 ns Supply Voltage DC Input or Output Voltage DC Electrical Characteristics: (Voltages Referenced to GND unless otherwise specified) Parameter Minimum High Level Input Voltage Maximum Low Level Input Voltage Minimum High Level Output Voltage Symbol VIH VIH VOH Maximum Low Level Output Voltage VOL −55 to +25C  85C  125C Unit 2.0 1.50 1.50 1.50 V 3.0 2.10 2.10 2.10 V 4.5 3.15 3.15 3.15 V 6.0 4.20 4.20 4.20 V 2.0 0.50 0.50 0.50 V 3.0 0.90 0.90 0.90 V 4.5 1.35 1.35 1.35 V 6.0 1.80 1.80 1.80 V 2.0 1.9 1.9 1.9 V 4.5 4.4 4.4 4.4 V 6.0 5.9 5.9 5.9 V |IOUT| ≤ 2.4mA 3.0 2.48 2.34 2.20 V IOUT| ≤ 4.0mA 4.5 3.98 3.84 3.70 V IOUT| ≤ 5.2mA 6.0 5.48 5.34 5.20 V 2.0 0.1 0.1 0.1 V 4.5 0.1 0.1 0.1 V 6.0 0.1 0.1 0.1 V |IOUT| ≤ 2.4mA 3.0 0.26 0.33 0.40 V IOUT| ≤ 4.0mA 4.5 0.26 0.33 0.40 V IOUT| ≤ 5.2mA 6.0 0.26 0.33 0.40 V Test Conditions VOUT = 0.1V or VCC −0.1V, |IOUT ≤ 20μA| VOUT = 0.1V or VCC −0.1V, |IOUT| ≤ 20μA VIN = VIH or VIL, |IOUT| ≤ 20μA VIN = VIH or VIL VIN = VIH or VIL, |IOUT| ≤ 20μA VIN = VIH or VIL Guaranteed Limits VCC (V) Maximum Input Leakage Current IIN VIN = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 μA Maximum Quiescent Supply Current ICC VIN = VCC or GND, IOUT = 0μA 6.0 2.0 20 40 μA AC Electrical Characteristics: (tr = tf = 6ns, CL = 50pF unless otherwise specified) Parameter Maximum Propagation Delay, Input A or B to Output Y Symbol tPLH, tPHL Test Conditions Guaranteed Limits VCC (V) −55 to +25C  85C  125C Unit 2.0 75 95 110 ns 3.0 30 40 55 ns 4.5 15 19 22 ns 6.0 13 16 19 ns AC Electrical Characteristics (Cont’d): (tr = tf = 6ns, CL = 50pF unless otherwise specified) Parameter Maximum Output Transition Time, Any Output Maximum Input Capacitance Parameter Power Dissipation Capacitance (Per Buffer) Symbol Test Conditions tTLH, tTHL Cin Symbol CPD Guaranteed Limits VCC (V) −55 to +25C  85C  125C Unit 2.0 75 95 110 ns 3.0 27 32 36 ns 4.5 15 19 22 ns 6.0 13 16 19 ns − 10 10 10 pF Test Conditions Typical @ +25C, VCC = 5V, VEE = 0V Unit 20 pF Note 4 Note 4. CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC. A L L H H Truth Table: Inputs Output B Y L L H L L L H H Logic Diagram A1 B1 A2 B2 1 3 2 4 6 5 Y1 Y2 Y = AB A3 B3 A4 B4 9 8 10 12 11 13 Pin14 = VCC Pin7 = GND Y3 Y4 Pin Connection Diagram 1A 1 14 VCC 1B 2 1Y 3 13 4B 12 4A 2A 4 11 4Y 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y 14 8 1 7 .300 (7.62) .785 (19.95) Max .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min