MSM51V18165BSL

¡ Semiconductor MSM51V18165B/BSL ¡ Semiconductor MSM51V18165B/BSL E2G0087-17-41 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165B/BSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ double-layer metal CMOS process. The MSM51V18165B/BSL is available in a 42-pin plastic SOJ or 50/44-pin plastic TSOP. The MSM51V18165BSL (the self-refresh version) is specially designed for lower-power applications. FEATURES • 1,048,576-word ¥ 16-bit configuration • Single 3.3 V power supply, ± 0.3 V tolerance • Input : LVTTL compatible, low input capacitance • Output : LVTTL compatible, 3-state • Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (SL version) • Fast page mode with EDO, read modify write capability • CAS before RAS refresh, hidden refresh, RAS-only refresh capability • CAS before RAS self-refresh capability (SL version) • Package options: 42-pin 400 mil plastic SOJ (SOJ42-P-400-1.27) (Product : MSM51V18165B/BSL-xxJS) 50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM51V18165B/BSL-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family Access Time (Max.) tRAC tAA tCAC tOEA Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 84 ns 104 ns 124 ns 684 mW 576 mW 504 mW 1.8 mW/ 0.72 mW (SL version) MSM51V18165B/BSL-50 50 ns 25 ns 13 ns 13 ns MSM51V18165B/BSL-60 60 ns 30 ns 15 ns 15 ns MSM51V18165B/BSL-70 70 ns 35 ns 20 ns 20 ns 409 MSM51V18165B/BSL ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 VCC 6 DQ5 7 DQ6 8 DQ7 9 DQ8 10 NC 11 NC 12 WE 13 RAS 14 NC 15 NC 16 A0 17 A1 18 A2 19 A3 20 VCC 21 42 VSS 41 DQ16 40 DQ15 39 DQ14 38 DQ13 37 VSS 36 DQ12 35 DQ11 34 DQ10 33 DQ9 32 NC 31 LCAS 30 UCAS 29 OE 28 A9 27 A8 26 A7 25 A6 24 A5 23 A4 22 VSS VCC 1 DQ1 2 DQ2 3 DQ3 4 DQ4 5 VCC 6 DQ5 7 DQ6 8 DQ7 9 DQ8 10 NC 11 50 VSS 49 DQ16 48 DQ15 47 DQ14 46 DQ13 45 VSS 44 DQ12 43 DQ11 42 DQ10 41 DQ9 40 NC NC 15 NC 16 WE 17 RAS 18 NC 19 NC 20 A0 21 A1 22 A2 23 A3 24 VCC 25 36 NC 35 LCAS 34 UCAS 33 OE 32 A9 31 A8 30 A7 29 A6 28 A5 27 A4 26 VSS 42-Pin Plastic SOJ 50/44-Pin Plastic TSOP (K Type) Pin Name A0 - A9 RAS LCAS UCAS DQ1 - DQ16 OE WE VCC VSS NC Function Address Input Row Address Strobe Lower Byte Column Address Strobe Upper Byte Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (3.3 V) Ground (0 V) No Connection Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 410 ¡ Semiconductor MSM51V18165B/BSL BLOCK DIAGRAM Timing Generator WE I/O Controller I/O Controller OE RAS LCAS UCAS 8 Output Buffers 8 DQ1 - DQ8 8 10 Column Address Buffers Internal Address Counter Row Address 10 Buffers 10 Column Decoders Input Buffers 8 A0 - A9 Refresh Control Clock Sense Amplifiers 16 I/O Selector 16 8 10 Input Buffers 8 Row Decoders Word Drivers Memory Cells 8 DQ9 - DQ16 Output Buffers 8 VCC On Chip VBB Generator VSS FUNCTION TABLE Input Pin RAS H L L L L L L L L LCAS * H L H L L H L L UCAS * H H L L H L L L WE * * H H H L L L H OE * * L L L H H H H High-Z High-Z DOUT High-Z DOUT DIN Don't Care DIN High-Z DQ Pin DQ1 - DQ8 DQ9 - DQ16 High-Z High-Z High-Z DOUT DOUT Don't Care DIN DIN High-Z Function Mode Standby Refresh Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write — *: "H" or "L" 411 MSM51V18165B/BSL ¡ Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD * Topr Tstg Rating –0.5 to 4.6 50 1 0 to 70 –55 to 150 Unit V mA W °C °C *: Ta = 25°C Recommended Operating Conditions Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 3.0 0 2.0 –0.3 Typ. 3.3 0 — — Max. 3.6 0 VCC + 0.3 0.8 (Ta = 0°C to 70°C) Unit V V V V Capacitance Parameter Input Capacitance (A0 - A9) Input Capacitance (RAS, LCAS, UCAS, WE, OE) Output Capacitance (DQ1 - DQ16) Symbol CIN1 CIN2 CI/O Typ. — — — (VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz) Max. 5 7 7 Unit pF pF pF 412 ¡ Semiconductor DC Characteristics Parameter Output High Voltage Output Low Voltage Input Leakage Current Symbol MSM51V18165B/BSL (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Condition MSM51V18165 MSM51V18165 MSM51V18165 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. VOH IOH = –2.0 mA VOL IOL = 2.0 mA 0 V £ VI £ VCC + 0.3 V; ILI All other pins not under test = 0 V DQ disable 0 V £ VO £ VCC RAS, CAS cycling, tRC = Min. RAS, CAS = VIH ICC2 RAS, CAS ≥ VCC –0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tHPC = Min. tRC = 125 ms, ICC10 CAS before RAS, tRAS £ 1 ms RAS £ 0.2 V, CAS £ 0.2 V — 300 — 300 — 300 mA 1, 4, 5 — 190 — 160 — 140 mA 1, 3 — 190 — 160 — 140 mA 1, 2 — 5 — 5 — 5 mA 1 — 190 — 160 — 140 mA 1, 2 –10 10 –10 10 –10 10 mA 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 V V Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) Average Power Supply Current (Battery Backup) Average Power Supply Current (CAS before RAS Self-Refresh) ILO –10 10 –10 10 –10 10 mA ICC1 — — — — 190 2 0.5 200 — — — — 160 2 0.5 200 — — — — 140 2 0.5 200 mA 1, 2 mA mA 1 1, 5 ICCS — 300 — 300 — 300 mA 1, 5 Notes : 1. 2. 3. 4. 5. ICC Max. is specified as ICC for output open condition. The address can be changed once or less while RAS = VIL. The address can be changed once or less while CAS = VIH. VCC – 0.2 V £ VIH £ VCC + 0.3 V, –0.3 V £ VIL £ 0.2 V. SL version. 413 MSM51V18165B/BSL AC Characteristics (1/2) ¡ Semiconductor (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3 Parameter Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access Time from CAS Precharge Access Time from OE Output Low Impedance Time from CAS Data Output Hold After CAS Low CAS to Data Output Buffer Turn-off Delay Time RAS to Data Output Buffer Turn-off Delay Time OE to Data Output Buffer Turn-off Delay Time WE to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period Refresh Period (SL version) RAS Precharge Time RAS Pulse Width RAS Hold Time RAS Hold Time referenced to OE CAS Precharge Time (Fast Page Mode with EDO) CAS Pulse Width CAS Hold Time CAS to RAS Precharge Time RAS Hold Time from CAS Precharge OE Hold Time from CAS (DQ Disable) RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address to RAS Lead Time Symbol MSM51V18165 MSM51V18165 MSM51V18165 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. Max. — — — — 50 13 25 30 13 — — 13 13 13 13 50 16 128 — 10,000 100,000 Min. 104 135 25 68 — — — — — 0 5 0 0 0 0 1 — — 40 60 60 10 10 10 10 40 5 35 5 14 12 0 10 0 10 30 Max. — — — — 60 15 30 35 15 — — 15 15 15 15 50 16 128 — 10,000 100,000 Min. 124 160 30 78 — — — — — 0 5 0 0 0 0 1 — — 50 70 70 13 13 10 13 45 5 40 5 14 12 0 10 0 13 35 Max. — — — — 70 20 35 40 20 — — 20 20 20 20 50 16 128 — 10,000 100,000 tRC tRWC tHPC tHPRWC tRAC tCAC tAA tCPA tOEA tCLZ tDOH tCEZ tREZ tOEZ tWEZ tT tREF tREF tRP tRAS tRSH tROH tCP tCAS tCSH tCRP tRHCP tCHO tRCD tRAD tASR tRAH tASC tCAH tRAL 84 110 20 58 — — — — — 0 5 0 0 0 0 1 — — 30 50 50 7 7 7 7 35 5 30 5 11 9 0 7 0 7 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 12 12 13 13 5 6 15 7, 8 7, 8 7 7 3 16 4, 5, 6 4, 5 4, 6 4, 13 4 4 RAS Pulse Width (Fast Page Mode with EDO) tRASP — — — 10,000 — — — — 37 25 — — — — — — — — 10,000 — — — — 45 30 — — — — — — — — 10,000 — — — — 50 35 — — — — — 414 ¡ Semiconductor AC Characteristics (2/2) MSM51V18165B/BSL (VCC = 3.3 V ±0.3 V, Ta = 0°C to 70°C) Note 1, 2, 3 Parameter Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to RAS Write Command Set-up Time Write Command Hold Time Write Command Pulse Width WE Pulse Width (DQ Disable) OE Command Hold Time OE Precharge Time OE Command Hold Time Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Set-up Time Data-in Hold Time OE to Data-in Delay Time CAS to WE Delay Time Column Address to WE Delay Time RAS to WE Delay Time CAS Precharge WE Delay Time CAS Active Delay Time from RAS Precharge RAS to CAS Set-up Time (CAS before RAS) RAS to CAS Hold Time (CAS before RAS) RAS Pulse Width (CAS before RAS Self-Refresh) RAS Precharge Time (CAS before RAS Self-Refresh) CAS Hold Time (CAS before RAS Self-Refresh) Symbol MSM51V18165MSM51V18165 MSM51V18165 B/BSL-50 B/BSL-60 B/BSL-70 Unit Note Min. Max. — — — — — — — — — — — — — — — — — — — — — — — — — Min. 0 0 0 0 10 10 10 10 10 10 10 10 0 10 15 34 49 79 54 5 5 10 100 110 –50 Max. — — — — — — — — — — — — — — — — — — — — — — — — — Min. 0 0 0 0 13 10 10 13 10 10 13 13 0 13 20 44 59 94 64 5 5 10 100 130 –50 Max. — — — — — — — — — — — — — — — — — — — — — — — — — ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns 14 11, 12 11, 12 10 10 10 10 12 12 13 16 16 16 12 9, 12 9 10, 12 12 0 0 0 0 7 7 7 7 7 7 7 7 0 7 13 30 42 67 47 5 5 10 100 90 –50 tRCS tRCH tRRH tWCS tWCH tWP tWPE tOEH tOEP tOCH tRWL tCWL tDS tDH tOED tCWD tAWD tRWD tCPWD tRPC tCSR tCHR tRASS tRPS tCHS 415 MSM51V18165B/BSL ¡ Semiconductor Notes: 1. A start-up delay of 200 µs is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 2 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 1 TTL load and 100 pF. The output timing reference levels are VOH = 2.0 V and VOL = 0.8 V. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. 7. tCEZ (Max.), tREZ (Max.), tWEZ (Max.) and tOEZ (Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tCEZ and tREZ must be satisfied for open circuit condition. 9. tRCH or tRRH must be satisfied for a read cycle. 10. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD ≥ tCWD (Min.) , tRWD ≥ tRWD (Min.), tAWD ≥ tAWD (Min.) and tCPWD ≥ tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 11. These parameters are referenced to the UCAS and LCAS, leading edges in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 12. These parameters are determined by the falling edge of either UCAS or LCAS, whichever is earlier. 13. These parameters are determined by the rising edge of either UCAS or LCAS, whichever is later. 14. tCWL should be satisfied by both UCAS and LCAS. 15. tCP is determined by the time both UCAS and LCAS are high. 16. Only SL version. See ADDENDUM Q for AC Timing Waveforms 416