NJVMJD148T4G-VF01

MJD148 NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • • • • • • High Gain Low Saturation Voltage High Current Gain − Bandwidth Product Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS COLLECTOR 2, 4 1 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit VCEO 45 Vdc Collector−Base Voltage VCB 45 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector−Emitter Voltage Collector Current − Continuous IC 4.0 Adc ICM 7.0 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector Current − Peak Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 4 1 2 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW J148G A Y WW J148 G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MJD148T4G DPAK (Pb−Free) 2,500/Tape & Reel NJVMJD148T4G DPAK (Pb−Free) 2,500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 9 1 Publication Order Number: MJD148/D MJD148 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 °C/W Min Max Unit 45 − − 20 − 1 40 85 50 30 − 375 − − − 0.5 − 1.1 3 − 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) hFE DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc) (IC = 0.5 Adc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 3 Adc, VCE = 1 Vdc) Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 0.2 Adc) VCE(sat) Base−Emitter On Voltage (IC = 2 Adc, VCE = 1 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain−Bandwidth Product (IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz) MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 MJD148 TYPICAL CHARACTERISTICS 10000 10000 VCE = 10 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 1000 150°C 100°C 25°C −55°C 100 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 150°C 1000 100°C 25°C −55°C 100 10 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. DC Current Gain 10 Figure 2. DC Current Gain 2 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1A 3A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 1.2 1.2 VCE = 2 V IC/IB = 10 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) Figure 3. Collector Saturation Region TA = −55°C 0.8 25°C 0.6 100°C 0.4 150°C 0.2 0 0.00001 0.0001 0.001 0.01 0.1 1 1.0 0.8 TA = −55°C 0.6 0.4 25°C 0.2 100°C 150°C 0 0.000001 0.00001 0.0001 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Base Emitter Voltage vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 10 MJD148 0.5 + 2.5 IC/IB = 10 0.4 0.35 0.3 0.25 0.2 0.15 0.1 *APPLIES FOR IC/IB ≤ hFE/2 *TJ = − 65°C to + 150°C +2 qy, TEMPERATURE COEFFICIENTS (mV/°C) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.45 TA = −55°C 0.5 25°C 100°C 150°C 0 0.000001 0.00001 0.0001 + 1.5 +1 + 0.5 *qV for VCE(sat) 0 −0.5 −1 −1.5 qV for VBE −2 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) −2.5 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current 2 34 500 1k Figure 7. Temperature Coefficients 103 IC, COLLECTOR CURRENT (mA) VCE = 30 V 102 101 100 10−1 10−2 TJ = 150°C 100°C REVERSE FORWARD 25°C 10−3 −0.4 −0.3 −0.2 −0.1 ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 VBE, BASE−EMITTER VOLTAGE (V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Collector Cut−Off Region 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 P(pk) ZqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 Figure 9. Thermal Response www.onsemi.com 4 20 50 100 200 MJD148 Forward Bias Safe Operating Area Information IC, COLLECTOR CURRENT (A) 10 dc 1 5 ms 0.5 0.3 0.2 1 ms BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C SINGLE PULSE, D ≤ 0.1% TJ = 150°C 0.1 0.05 0.03 0.02 0.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500 ms 5 3 2 1 5 7 10 2 3 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 10. Maximum Rated Forward Bias www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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