NJVMJD253T4G-VF01

NJVMJD253T4G-VF01 Complementary Silicon Plastic Power Transistors DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Low Collector−Emitter Saturation Voltage High Current−Gain − Bandwidth Product Annular Construction for Low Leakage Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 4.0 A, 100 V, 12.5 W POWER TRANSISTOR COMPLEMENTARY COLLECTOR 2, 4 1 BASE 3 EMITTER 4 MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak 1 2 Symbol Value Unit VCB 100 Vdc VCEO 100 Vdc VEB 7.0 Vdc IC 4.0 Adc ICM 8.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Device Dissipation @ TA = 25°C (Note 2) Derate above 25°C PD 1.4 0.011 W W/°C TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted on minimum pad sizes recommended. 3 DPAK−3 CASE 369C STYLE 1 MARKING DIAGRAM AYWW J253G A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NJVMJD253T4G−VF01* DPAK (Pb−Free) 2,500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 February, 2017 − Rev. 0 1 Publication Order Number: NJVMJD253T4G−VF01/D NJVMJD253T4G−VF01 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 2) Symbol Value RqJC RqJA 10 89.3 Min Max 100 − − − 100 100 − 100 40 15 180 − − − 0.3 0.6 − 1.8 − 1.5 40 − − 50 Unit °C/W 2. When surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TJ = 125°C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) Vdc nAdc mAdc nAdc − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob MHz pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hFE⎪• ftest. www.onsemi.com 2 NJVMJD253T4G−VF01 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 TC 0.5 100ms 2 1ms 1 5ms 0.5 0.2 0.02 0 25 50 75 100 125 150 0.3 0.2 0.1 0.03 0.02 0.01 0.02 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Derating Figure 2. Active Region Maximum Safe Operating Area 100 The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. D = 0.5 0.2 0.1 0.07 0.05 1 T, TEMPERATURE (°C) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1 0.7 0.5 0.01 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 0.05 5 0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 500ms 5 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 3. Thermal Response www.onsemi.com 3 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 NJVMJD253T4G−VF01 1.4 100 70 50 VCE = 1.0 V VCE = 2.0 V TJ = 150°C TJ = 25°C 1.2 25°C V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 200 -55°C 30 20 10 7.0 5.0 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 IC/IB = 10 0.4 5.0 0.2 3.0 2.0 0.04 0.06 VCE(sat) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 0 0.04 0.06 4.0 0.1 θV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 4. DC Current Gain 0.4 0.6 1.0 +2.0 2.0 VCC +30 V *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 4.0 Figure 5. “On” Voltages +2.5 *qVC FOR VCE(sat) RC 25 ms 25°C to 150°C +11 V SCOPE RB 0 0 -55°C to 25°C -0.5 -1.0 -1.5 -9.0 V qVB FOR VBE -55°C to 25°C 0.1 0.2 0.4 0.6 1.0 2.0 4.0 Figure 6. Temperature Coefficients Figure 7. Switching Time Test Circuit 1K 10K 500 300 200 5K 3K 2K tr 100 ts t, TIME (ns) 1K 50 30 20 td 10 1 0.01 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES IC, COLLECTOR CURRENT (AMP) 5 3 2 D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 25°C to 150°C -2.0 -2.5 0.04 0.06 t, TIME (ns) 0.2 IC, COLLECTOR CURRENT (AMP) NPN MJD243 PNP MJD253 VCC = 30 V IC/IB = 10 TJ = 25°C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 3 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 500 300 200 100 50 30 20 5 tf NPN MJD243 PNP MJD253 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. Turn−On Time Figure 9. Turn−Off Time www.onsemi.com 4 3 5 10 NJVMJD253T4G−VF01 200 200 TJ = 25°C TJ = 25°C 100 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 Cib 70 50 30 Cob 20 Cib 70 50 30 20 Cob MJD243 (NPN) MJD253 (PNP) 10 1.0 10 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 1 Figure 10. Capacitance 2 3 5 7 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance www.onsemi.com 5 50 70 100 NJVMJD253T4G−VF01 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E b3 c2 4 L3 Z D 1 L4 C A B 2 NOTE 7 c SIDE VIEW b TOP VIEW H DETAIL A 3 b2 e 0.005 (0.13) M GAUGE PLANE C Z C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW H L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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