MJD340(NPN),
MJD350(PNP)
High Voltage Power
Transistors
DPAK for Surface Mount Applications
www.onsemi.com
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically Similar to Popular MJE340 and MJE350
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
300
Vdc
Collector−Base Voltage
VCB
300
Vdc
Emitter−Base Voltage
VEB
3
Vdc
IC
0.5
Adc
Collector Current − Peak
ICM
0.75
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
15
0.12
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.56
0.012
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
Collector−Emitter Voltage
Collector Current − Continuous
ESD − Human Body Model
ESD − Machine Model
COLLECTOR
2, 4
1
BASE
1
BASE
3
EMITTER
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
AYWW
J3x0G
V
3B
2
MM
MJD340 (NPN)
MJD350 (PNP)
COLLECTOR
2, 4
MARKING DIAGRAM
HBM
MJD340 (NPN)
MJD350 (PNP)
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
V
M4
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
A
Y
WW
J3x0
G
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x= 4 or 5
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 12
1
Publication Order Number:
MJD340/D
MJD340 (NPN), MJD350 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.33
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
80
°C/W
TL
260
°C
Min
Max
Unit
300
−
−
0.1
−
0.1
30
240
−
1
−
1.5
10
−
Leading Temperature for Soldering Purpose
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 1 mA, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 300 V, IE = 0)
ICEO
Emitter Cutoff Current
(VBE = 3 V, IC = 0)
IEBO
V
mA
mA
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 50 mA, VCE = 10 V)
hFE
Collector−Emitter Saturation Voltage
(IC = 100 mA, IB = 10 mA)
VCE(sat)
Base−Emitter On Voltage
(IC = 1 A, VCE = 10 V)
VBE(on)
−
V
V
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 50 mA, VCE = 10 V, f = 10 MHz)
fT
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
www.onsemi.com
2
MJD340 (NPN), MJD350 (PNP)
TYPICAL CHARACTERISTICS
MJD340
300
VCE = 2 V
VCE = 10 V
hFE , DC CURRENT GAIN
200
TJ = 150°C
100
70
+100°C
50
+25°C
30
20
10
-55°C
1
2
3
5
7
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 1. DC Current Gain
MJD340
1
V, VOLTAGE (VOLTS)
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
0.2
IC/IB = 5
0
10
20
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 2. “On” Voltages
MJD350
1
TJ = 150°C
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
25°C
100
hFE , DC CURRENT GAIN
MJD350
1
200
70
-55°C
50
30
20
VCE = 2 V
VCC = 10 V
7
10
0.6
VBE @ VCE = 10 V
0.4
IC/IB = 10
0.2
VCE(sat)
10
5
VBE(sat) @ IC/IB = 10
20 30
200 300
50 70 100
IC, COLLECTOR CURRENT (mA)
0
500
5
Figure 3. DC Current Gain
7
10
IC/IB = 5
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
www.onsemi.com
3
200 300 500
MJD340 (NPN), MJD350 (PNP)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.05
0.01
SINGLE PULSE
0.02 0.03 0.05
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1k
Figure 5. Thermal Response
1000
IC, COLLECTOR CURRENT (mA)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
500
300
200
500 ms
1 ms
100
50
30
20
dc
10
5
3
2
10
20 30
50 70 100
200 300
500 700 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region Safe Operating Area
TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)
1
2 20
1.5 15
TA
TC
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 7. Power Derating
www.onsemi.com
4
125
150
MJD340 (NPN), MJD350 (PNP)
ORDERING INFORMATION
Package
Shipping†
MJD340G
DPAK
(Pb−Free)
75 Units / Rail
MJD340RLG
DPAK
(Pb−Free)
1,800 / Tape & Reel
MJD340T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD340T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
MJD350G
DPAK
(Pb−Free)
75 Units / Rail
MJD350T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD350T4G
DPAK
(Pb−Free)
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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