RBQ20NS100AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
100
V
Io
20
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ20NS100A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
100
V
Reverse voltage
VR
Reverse direct voltage
100
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=105℃Max.
20
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+20.206391+2.45784
- 10+15.1548010+1.84338
- 50+10.1032050+1.22892
- 100+8.08095100+0.98294
- 500+7.58143500+0.92218
- 1000+7.275271000+0.88494
- 2000+7.170532000+0.87220
- 4000+7.122194000+0.86632
- 国内价格
- 1+13.46253
- 10+9.00416
- 50+8.39223
- 100+7.06346
- 200+6.67881
- 500+6.66133
- 1000+6.02317