RBQ20NS45AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
● Outline
VR
45
V
Io
20
A
IFSM
100
A
● Features
● Inner Circuit
High reliability
Power mold type
Cathode common dual type
Low IR
● Application
● Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
Quantity(pcs)
1000
Taping Code
TL
Marking
BQ20NS45A
Switching power supply
● Structure
Silicon epitaxial planar
● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
V RM
Duty≦0.5
45
V
Reverse voltage
VR
Reverse direct voltage
45
V
Average rectified forward current
Io
60Hz half sin waveform,resistive load,
Io/2 per diode,Tc=115℃Max.
20
A
IFSM
60Hz half sin waveform,
non-repetitive,per diode,Ta=25℃
100
A
Tj
-
150
℃
Tstg
-
-55 ~ 150
℃
Peak forward surge current
Junction temperature(1)
Storage temperature
Note(1) To avoid occurrence of thermal runaway , actual board is to be designed to fulfill dPd/dTj
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免费人工找货- 国内价格 香港价格
- 1+9.668131+1.17600
- 10+5.7042010+0.69384
- 50+4.3103850+0.52430
- 100+3.84308100+0.46746
- 500+3.52887500+0.42924
- 1000+3.472471000+0.42238
- 2000+3.424132000+0.41650
- 4000+3.383854000+0.41160
- 国内价格 香港价格
- 1+9.668131+1.17600
- 10+5.7042010+0.69384
- 50+4.3103850+0.52430
- 100+3.84308100+0.46746
- 500+3.52887500+0.42924
- 1000+3.472471000+0.42238
- 2000+3.424132000+0.41650
- 4000+3.383854000+0.41160