FSS232

Ordering number:ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2116 [FSS232] 8 5 0.3 4.4 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 Conditions 0.1 1.8max 1 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Ratings 30 ±20 9 6.0 Unit V V A A W ˚C ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 52 1.8 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=10V ID=4A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 1.0 10.5 15 15 23 1550 350 220 20 33 Conditions Ratings min 30 1 ±10 2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S232 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-1939 No.6359-1/4 FSS232 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=9A VDS=10V, VGS=10V, ID=9A VDS=10V, VGS=10V, ID=9A IS=9A, VGS=0 Ratings min typ 12 240 110 95 40 5 7 0.83 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=15V 10V 0V VIN ID=9A RL=1.67Ω VIN D PW=10µs D.C.≤1% VOUT G P.G 50Ω S FSS232 15 ID -- VDS 10.0V 16 14 12 10 8 ID -- VGS VDS=10V 3.5V 12 Drain Current, ID – A VGS=2.5V 9 Ta= 7 0.5 1.0 1.5 2.0 5°C --25 ° 2.5 6 Drain Current, ID – A 6.0V 4.0V 3.0 V 6 4 2 3 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 C 25°C 3.0 IT00756 Drain-to-Source Voltage, VDS – V 60 IT00755 Gate-to-Source Voltage, VGS – V 40 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS (on) – mΩ RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 50 35 30 25 20 15 10 5 0 --50 40 30 ID=4A 4A , I D= =4V VGS 9A 20 V GS= =9A 10V, I D 10 0 0 2 4 6 8 10 12 14 16 18 20 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS – V IT00757 Ambient Temperature, Ta – ˚C IT00758 No.6359-2/4 FSS232 Forward Transfer Admittance, | yfs | – S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 yfs -- ID VDS=10V 100 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF – A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 =-Ta 25 °C °C 75 0.01 0.001 2 3 5 70.01 2 3 5 70.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7 100 IT00759 Drain Current, ID – A 10000 7 5 0.3 0.4 0.5 --25 °C 0.6 0.7 °C 25 0.01 7 5 3 2 0.001 0.2 Ta= 75° C 25° C 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD – V 10 IT00760 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS – V VGS -- Qg VDS=10V ID=9A 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 IT00761 100 7 5 3 2 0 Ciss,Coss,Crss – pF 3 2 Ciss 1000 7 5 3 2 Coss Crss 100 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS – V 1000 7 5 Total Gate Charge, Qg – nC IT00762 SW Time -- ID VDD=15V VGS=10V Drain Current, ID – A ASO IDP=52A ID=9A 10